F3L200R07W2S5F_B11

制造商:

描述: 650 V, 200 A 3-level IGBT module

物料参数

Configuration:3-level
Dimensions(width):48.0mm
Dimensions(length):56.7mm
Features:Phase leg
Features:PressFIT
Features:SiC Schottky diode
Housing:EasyPACK™ 2B
I[C(nom)] / I[F(nom)]:200.0A
Qualification:Industrial
Technology:IGBT5 - S5
Technology:CoolSiC™ Schottky Diode
V[CE(sat)](Tvj=25°C typ):1.2V
V[CES] / V[RRM]:650.0V
V[F](Tvj=25°C typ):1.49V
I[C] max:200.0A
Voltage Class max:650.0V