DF200R12W1H3_B27

制造商:

描述: 1200 V, 200 A booster IGBT module

物料参数

I[C] max:200.0A
I[C(nom)] / I[F(nom)]:200.0A
V[CE(sat)](Tvj=25°C typ):1.3V
V[F](Tvj=25°C typ):2.0V
Configuration:Booster
Housing:EasyPACK™ 1B
Features:PressFIT
Qualification:Industrial
Technology:IGBT HighSpeed 3
Dimensions(length):48.0mm
Dimensions(width):33.8mm
Voltage Class max:1200.0V