DF160R12W2H3F_B11

制造商:

描述: 1200 V, 160 A booster IGBT module

物料参数

I[C] max:160.0A
Housing:EasyPACK™ 2B
Features:PressFIT
Features:SiC Schottky diode
V[F](Tvj=25°C typ):1.6V
I[C(nom)] / I[F(nom)]:160.0A
V[CE(sat)](Tvj=25°C typ):1.55V
Configuration:Booster
Qualification:Industrial
Technology:IGBT HighSpeed 3
Dimensions(length):56.7mm
Dimensions(width):48.0mm
Voltage Class max:1200.0V