DD1600S33HE4

制造商:

描述: 3300 V, 1600 A diodes IGBT module

物料参数

Configuration:Diodes
Dimensions(width):140.0mm
Dimensions(length):130.0mm
Features:Optimized IGBT Diode Ratio
Housing:IHV B
I[C(nom)] / I[F(nom)]:1600.0A
Qualification:Industrial
Qualification:Traction
Technology:Diode EC 4
V[CES] / V[RRM]:3300.0V
V[F](Tvj=25°C typ):2.9V
Voltage Class max:3300.0V
I[C] max:1600.0A