IGI60L2727B1M
制造商:
描述: 270 mΩ / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode
物料参数
| Generation: | G5 |
| V[DS] max: | 600.0V |
| Q[G]: | 1.2nC |
| Mounting: | SMT |
| I[D ](@25°C) max: | 4.8A |
| I[Dpuls](@25°C) max: | 9.0A |
| R[DS (on)](typ): | 270.0mΩ |