IGI60L1111B1M
制造商:
描述: 110 mΩ / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode
物料参数
| Generation: | G5 |
| V[DS] max: | 600.0V |
| Mounting: | SMT |
| R[DS (on)](typ): | 110.0mΩ |
| Q[G]: | 2.4nC |
| I[D ](@25°C) max: | 7.4A |
| I[Dpuls](@25°C) max: | 30.0A |