IDC52D75H8DA
制造商:
描述: Unleashing the Power of Infineons Cutting-Edge Si IGBT Technology
物料参数
| T[vj] [°C] max: | 185.0 |
| V[F](Tvj=185°C @200A): | 1.45V |
| I[Fn]: | 320.0A |
| V[RRM]: | 750.0V |