1ED21471S65F

制造商:

描述: 650 V high-side gate driver IC with over current protection (OCP), multi-function RCIN/Fault/Enable (RFE) and integrated bootstrap diode (BSD)

物料参数

Channels:1.0
Configuration:High-side
Input Vcc max:22.0V
Isolation Type:Functional levelshift
Qualification:Industrial
Package:PG-DSO-8
Turn Off Propagation Delay:55.0ns
Turn On Propagation Delay:55.0ns
Voltage Class:650.0V
V[BS] UVLO(On):10.0V
V[BS] UVLO(Off):8.7V
Output Current(Sink):4.0A
Output Current(Source):4.0A
V[CC] UVLO(Off):8.7V
V[CC] UVLO(On):10.0V