IGB110S10S1Q
制造商:
描述: CoolGaN™ Transistor 100 V G1 in PQFN 3x3, 11 mΩ
物料参数
| Qualification: | Automotive |
| Generation: | G1 |
| Q[G]: | 3.4nC |
| Mounting: | SMT |
| V[DS] max: | 100.0V |
| R[DS (on)](typ): | 9.4mΩ |
| I[D ](@25°C) max: | 23.0A |
| I[Dpuls](@25°C) max: | 210.0A |