INFINEON

Infineon 英飞凌专注于迎接现代社会的三大科技挑战: 高能效、 移动性和 安全性,为汽车和工业功率器件、芯片卡和安全应用提供半导体和系统解决方案。英飞凌的产品素以高可靠性、卓越质量和创新性著称,并在模拟和混合信号、射频、功率以及嵌入式控制装置领域掌握尖端技术。

IPN60R2K0PFD7S

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简介: 600V CoolMOS™ PFD7 superjunction MOSFET in SOT-223 package

I[D ](@25°C) max:  3.0A
I[D ] max:  3.0A
I[Dpuls] max:  4.5A
Mounting:  SMT
P[tot] max:  6.0W
Pin Count:  3.0Pins
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IPD60R2K0PFD7S

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数据:

简介: 600V CoolMOS™ PFD7 superjunction MOSFET in TO-252 DPAK package

ID (@25°C):  NoneA
ID:  NoneA
IDpuls:  NoneA
Mounting:  SMT
Ptot:  NoneW
Pin Count:  3.0Pins
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IPDQ65R017CFD7

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数据:

简介: The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies

I[D ](@25°C) max:  136.0A
I[D ] max:  136.0A
I[Dpuls] max:  524.0A
Mounting:  SMT
Operating Temperature max:  150.0°C
P[tot] max:  694.0W
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IPZA65R018CFD7

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数据:

简介: 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode in TO-247 4-pin package

I[D ] max:  106.0A
I[D ](@25°C) max:  106.0A
I[Dpuls] max:  495.0A
Mounting:  THT
Operating Temperature max:  150.0°C
P[tot] max:  446.0W
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IPW65R018CFD7

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数据:

简介: The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode in TO-247 package is the perfect choice for resonant high power topologies

I[D ] max:  106.0A
I[D ](@25°C) max:  106.0A
I[Dpuls] max:  495.0A
Polarity:  N
Q[G]:  234.0nC
Q[G](typ @10V):  234.0nC
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IPZA65R029CFD7

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数据:

简介: 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode in TO-247 4-pin package

I[D ] max:  69.0A
I[D ](@25°C) max:  69.0A
I[Dpuls] max:  304.0A
Mounting:  THT
P[tot] max:  305.0W
Polarity:  N
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IPW65R029CFD7

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数据:

简介: The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode in TO-247 package is the perfect choice for resonant high power topologies

I[D ] max:  69.0A
I[D ](@25°C) max:  69.0A
I[Dpuls] max:  304.0A
Mounting:  THT
P[tot] max:  305.0W
Polarity:  N
库存数量:
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IPDQ65R029CFD7

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数据:

简介: The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies

I[D ](@25°C) max:  85.0A
I[D ] max:  85.0A
I[Dpuls] max:  304.0A
Mounting:  SMT
Operating Temperature max:  150.0°C
P[tot] max:  463.0W
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IPDQ65R040CFD7

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数据:

简介: The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies

I[D ] max:  64.0A
I[D ](@25°C) max:  64.0A
I[Dpuls] max:  211.0A
Mounting:  SMT
Operating Temperature max:  150.0°C
P[tot] max:  357.0W
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IPT65R040CFD7

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数据:

简介: The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies

I[Dpuls] max:  211.0A
Mounting:  SMT
Operating Temperature max:  150.0°C
Polarity:  N
Q[G]:  97.0nC
R[DS (on)] max:  40.0mΩ
库存数量:
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