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IPP65R041CFD7

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数据:

简介: The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies

I[D ] max: 50.0A

I[D ](@25°C) max: 50.0A

I[Dpuls] max: 211.0A

Mounting: THT

P[tot] max: 227.0W

Polarity: N

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IPB65R041CFD7

分类:
数据:

简介: The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies

I[D ] max: 50.0A

I[D ](@25°C) max: 50.0A

I[Dpuls] max: 211.0A

Mounting: SMT

P[tot] max: 227.0W

Pin Count: 3.0Pins

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IPW65R041CFD7

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数据:

简介: The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode in TO-247 package is the perfect choice for resonant high power topologies

I[D ] max: 50.0A

I[D ](@25°C) max: 50.0A

I[Dpuls] max: 211.0A

Mounting: THT

P[tot] max: 227.0W

Polarity: N

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IPDQ65R060CFD7

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数据:

简介: The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies

I[D ] max: 45.0A

I[D ](@25°C) max: 45.0A

I[Dpuls] max: 139.0A

Mounting: SMT

Operating Temperature max: 150.0°C

P[tot] max: 272.0W

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IPT65R060CFD7

分类:
数据:

简介: The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies

I[Dpuls] max: 139.0A

Mounting: SMT

Polarity: N

Q[G]: 65.0nC

R[DS (on)] max: 60.0mΩ

V[DS] max: 650.0V

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IPP65R060CFD7

分类:
数据:

简介: The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies

I[D ] max: 36.0A

I[D ](@25°C) max: 36.0A

I[Dpuls] max: 146.0A

Mounting: THT

P[tot] max: 171.0W

Polarity: N

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询价

IPW65R060CFD7

分类:
数据:

简介: The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode in TO-247 package is the perfect choice for resonant high power topologies

I[D ] max: 36.0A

I[D ](@25°C) max: 36.0A

I[Dpuls] max: 146.0A

Mounting: THT

P[tot] max: 171.0W

Polarity: N

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询价

IPL65R065CFD7

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数据:

简介: The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies

I[D ](@25°C) max: 33.0A

I[D ] max: 33.0A

I[Dpuls] max: 139.0A

Mounting: SMT

P[tot] max: 195.0W

Polarity: N

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IPDQ65R080CFD7

分类:
数据:

简介: The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies

I[D ] max: 36.0A

I[D ](@25°C) max: 36.0A

I[Dpuls] max: 107.0A

Mounting: SMT

Operating Temperature max: 150.0°C

P[tot] max: 223.0W

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IPT65R080CFD7

分类:
数据:

简介: The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies

I[Dpuls] max: 107.0A

Mounting: SMT

Polarity: N

Q[G]: 50.0nC

R[DS (on)] max: 80.0mΩ

V[DS] max: 650.0V

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