INFINEON

Infineon 英飞凌专注于迎接现代社会的三大科技挑战：高能效、移动性和安全性，为汽车和工业功率器件、芯片卡和安全应用提供半导体和系统解决方案。英飞凌的产品素以高可靠性、卓越质量和创新性著称，并在模拟和混合信号、射频、功率以及嵌入式控制装置领域掌握尖端技术。

AIMCQ120R030M1T

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数据:

简介: Automotive CoolSiC™ MOSFET 1200 V in Q-DPAK (HDSOP-22-3), 30 mΩ

Package: PG-HDSOP-22

V[DS] max: 1200.0V

R[DS (on)](@ Tj = 25°C): 30.0mΩ

I[D ](@25°C) max: 78.0A

Operating Temperature max: 175.0°C

Currently planned availability until at least: 2033

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IMBF170R450M1

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数据:

简介: CoolSiC™ 1700 V SiC Trench MOSFET in TO-263-7 package

C[iss]: 610.0pF

C[oss]: 16.0pF

I[D ](@25°C) max: 9.8A

Mounting: SMD

Operating Temperature max: 175.0°C

P[tot](@ T[A]=25°C) max: 107.0W

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IMZ120R350M1H

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数据:

简介: CoolSiC™ MOSFET discrete 1200 V in TO247-4 package

Qualification: Industrial

R[DS (on)](@18V): 350.0mΩ

C[iss]: 182.0pF

C[oss]: 10.0pF

I[D ](@25°C) max: 4.7A

Mounting: THT

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AIMCQ120R020M1T

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数据:

简介: Automotive CoolSiC™ MOSFET 1200 V in Q-DPAK (HDSOP-22-3), 19 mΩ

Package: PG-HDSOP-22

V[DS] max: 1200.0V

R[DS (on)](@ Tj = 25°C): 19.0mΩ

I[D ](@25°C) max: 116.0A

Operating Temperature max: 175.0°C

Polarity: N

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IMT40R025M2H

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数据:

简介: CoolSiC™ MOSFET 400 V G2 in TOLL (PG-HSOF-8) package, 25 mΩ

Package: PG-HSOF-8

Qualification: Industrial

R[thJC] max: 0.7K/W

Technology: CoolSiC™ G2

Operating Temperature max: 175.0°C

Polarity: N

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IMW120R220M1H

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数据:

简介: CoolSiC™ 1200V SiC Trench MOSFET in TO247-3 package

Qualification: Industrial

R[DS (on)](@ Tj = 25°C): 220.0mΩ

C[iss]: 289.0pF

C[oss]: 16.0pF

I[D ](@25°C) max: 13.0A

Mounting: THT

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IMZ120R220M1H

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数据:

简介: CoolSiC™ 1200V SiC Trench MOSFET in TO247-4 package

Qualification: Industrial

R[DS (on)](@18V): 220.0mΩ

C[iss]: 289.0pF

C[oss]: 16.0pF

I[D ](@25°C) max: 13.0A

Mounting: THT

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IMBG65R163M1H

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数据:

简介: SiC MOSFET in compact SMD package

Operating Temperature max: 175.0°C

P[tot] max: 85.0W

Polarity: N

Qualification: Industrial

R[DS (on)](@ Tj = 25°C): 163.0mΩ

V[DS] max: 650.0V

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IMBG120R181M2H

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数据:

简介: CoolSiC™ MOSFET discrete 1200 V G2 in TO-263-7 package

C[iss]: 350.0pF

C[oss]: 12.0pF

Operating Temperature max: 175.0°C

I[D ](@ T[C]=25°C): 14.9A

Mounting: SMD

P[tot](@ T[A]=25°C) max: 94.0W

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AIMZHN120R160M1T

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数据:

简介: Automotive 1200V Silicon-carbide (SiC) Trench Power MOSFET in TO247-4L, 160mΩ

I[D ](@25°C) max: 17.0A

Operating Temperature max: 175.0°C

Polarity: N

Qualification: Automotive

R[DS (on)](@ Tj = 25°C): 160.0mΩ

V[DS] max: 1200.0V

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