INFINEON

Infineon 英飞凌专注于迎接现代社会的三大科技挑战：高能效、移动性和安全性，为汽车和工业功率器件、芯片卡和安全应用提供半导体和系统解决方案。英飞凌的产品素以高可靠性、卓越质量和创新性著称，并在模拟和混合信号、射频、功率以及嵌入式控制装置领域掌握尖端技术。

DF8MR12W1M1HF_B67

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简介: CoolSiC™ MOSFET booster module 1200 V

Applications: ESS

Applications: EV Charger

Applications: Solar

Applications: UPS

Configuration: Booster

Dimensions(width): 33.8mm

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AIMBG75R016M1H

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简介: The CoolSiC™ MOSFET 750 V is a highly robust SiC MOSFET for the best system performance and reliability.

I[D ](@25°C) max: 98.0A

Operating Temperature max: 175.0°C

Polarity: N

Qualification: Automotive

R[DS (on)](@ Tj = 25°C): 16.0mΩ

V[DS] max: 750.0V

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IMW65R015M2H

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简介: CoolSiC™ MOSFET 650 V G2 in TO-247-3 package

Qualification: Industrial

R[thJC] max: 0.44K/W

I[D ](@25°C) max: 93.0A

Operating Temperature max: 175.0°C

Polarity: N

R[DS (on)](@ Tj = 25°C): 14.5mΩ

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AIMDQ75R016M1H

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数据:

简介: The CoolSiC™ MOSFET 750 V is a highly robust SiC MOSFET for the best system performance and reliability.

I[D ](@25°C) max: 98.0A

Operating Temperature max: 175.0°C

Qualification: Automotive

R[DS (on)](@ Tj = 25°C): 16.0mΩ

V[DS] max: 750.0V

Technology: CoolSiC™ G1

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IMZA65R015M2H

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简介: CoolSiC™ MOSFET 650 V G2 in TO-247-4 package

Qualification: Industrial

R[thJC] max: 0.44K/W

I[D ](@25°C) max: 103.0A

Operating Temperature max: 175.0°C

Polarity: N

R[DS (on)](@ Tj = 25°C): 14.5mΩ

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AIMBG75R020M1H

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数据:

简介: The CoolSiC™ Automotive MOSFET 750 V G1 is a highly robust SiC MOSFET for the best system performance and reliability.

I[D ](@25°C) max: 81.0A

Operating Temperature max: 175.0°C

Polarity: N

Qualification: Automotive

R[DS (on)](@ Tj = 25°C): 20.0mΩ

Technology: CoolSiC™ G1

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IMBG65R015M2H

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简介: CoolSiC™ MOSFET 650 V G2 in TO-263-7 package

Qualification: Industrial

R[thJC] max: 0.36K/W

I[D ](@25°C) max: 115.0A

Operating Temperature max: 175.0°C

Polarity: N

R[DS (on)](@ Tj = 25°C): 14.5mΩ

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IMZA120R014M1H

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简介: CoolSiC™ 1200 V, 14 mΩ SiC Trench MOSFET in TO247-4 package

C[iss]: 4580.0pF

C[oss]: 211.0pF

I[D ](@25°C) max: 127.0A

Mounting: THT

Operating Temperature max: 175.0°C

P[tot](@ T[A]=25°C) max: 455.0W

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IMW120R014M1H

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数据:

简介: CoolSiC™ 1200 V, 14 mΩ SiC Trench MOSFET in TO247-3 package

C[iss]: 4580.0pF

C[oss]: 211.0pF

I[D ](@25°C) max: 127.0A

Mounting: THT

Operating Temperature max: 175.0°C

P[tot](@ T[A]=25°C) max: 455.0W

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IMBG120R012M2H

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数据:

简介: CoolSiC™ MOSFET discrete 1200 V G2 in TO-263-7 package

C[iss]: 4050.0pF

C[oss]: 176.0pF

I[D ](@ T[C]=25°C) max: 144.0A

Operating Temperature max: 175.0°C

Mounting: SMD

P[tot](@ T[A]=25°C) max: 600.0W

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