INFINEON

Infineon 英飞凌专注于迎接现代社会的三大科技挑战：高能效、移动性和安全性，为汽车和工业功率器件、芯片卡和安全应用提供半导体和系统解决方案。英飞凌的产品素以高可靠性、卓越质量和创新性著称，并在模拟和混合信号、射频、功率以及嵌入式控制装置领域掌握尖端技术。

AIMBG120R020M1

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数据:

简介: Automotive 1200V Silicon-carbide (SiC) Trench Power MOSFET in D2PAK-7L, 20mΩ

VGSS, off: 0

VGSS, on: 20

I[D ](@25°C) max: 104.0A

Operating Temperature max: 175.0°C

V[DS] max: 1200.0V

Qualification: Automotive

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DF4-19MR20W3M1HF_B11

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数据:

简介: 2000 V, 60 A Boost EasyPACK™ 3B CoolSiC™ MOSFET Module

Applications: Solar

Configuration: Booster

Dimensions(length): 109.9mm

Dimensions(width): 62.0mm

Features: PressFIT

Qualification: Industrial

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AIMZA75R027M1H

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数据:

简介: The CoolSiC™ Automotive MOSFET 750 V G1 is a highly robust SiC MOSFET for the best combination of system performance and reliability

I[D ](@25°C) max: 60.0A

Operating Temperature max: 175.0°C

Polarity: N

Qualification: Automotive

R[DS (on)](@ Tj = 25°C): 27.0mΩ

V[DS] max: 750.0V

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AIMDQ75R027M1H

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数据:

简介: The CoolSiC™ Automotive MOSFET 750 V G1 is a highly robust SiC MOSFET for the best system performance and reliability.

I[D ](@25°C) max: 64.0A

Operating Temperature max: 175.0°C

Polarity: N

Qualification: Automotive

R[DS (on)](@ Tj = 25°C): 27.0mΩ

Technology: CoolSiC™ G1

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IMBG120R017M2H

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数据:

简介: CoolSiC™ MOSFET discrete 1200 V G2 in TO-263-7 package

C[iss]: 2910.0pF

C[oss]: 126.0pF

I[D ](@ T[C]=25°C) max: 107.0A

Operating Temperature max: 175.0°C

Mounting: SMD

P[tot](@ T[A]=25°C) max: 470.0W

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FF17MR12W1M1H_B11

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数据:

简介: Half-bridge 1200 V module with CoolSiC™ MOSFET

Applications: ESS

Applications: EV Charger

Applications: Solar

Applications: UPS

Configuration: Half-bridge

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FF17MR12W1M1H_B70

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数据:

简介: Half-bridge 1200 V module with CoolSiC™ MOSFET

Applications: UPS

Applications: ESS

Applications: EV Charger

Applications: Solar

Configuration: Half-bridge

Dimensions(width): 33.8mm

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F4-17MR12W1M1H_B76

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数据:

简介: CoolSiC™ MOSFET fourpack module 1200 V

Applications: ESS

Applications: UPS

Applications: Solar

Applications: EV Charger

Configuration: Fourpack

Housing: Easy 1B

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IMZA75R016M1H

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数据:

简介: The CoolSiC™ MOSFET 750 V G1 is a highly robust SiC MOSFET for the best combination of system performance and reliability

I[D ](@25°C) max: 89.0A

Operating Temperature max: 175.0°C

Polarity: N

Qualification: Industrial

R[DS (on)](@ Tj = 25°C): 16.0mΩ

V[DS] max: 750.0V

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F4-17MR12W1M1HP_B76

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数据:

简介: CoolSiC™ MOSFET fourpack module 1200 V

Applications: ESS

Applications: UPS

Applications: Solar

Applications: EV Charger

Configuration: Fourpack

Housing: Easy 1B

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