INFINEON

Infineon 英飞凌专注于迎接现代社会的三大科技挑战: 高能效、 移动性和 安全性,为汽车和工业功率器件、芯片卡和安全应用提供半导体和系统解决方案。英飞凌的产品素以高可靠性、卓越质量和创新性著称,并在模拟和混合信号、射频、功率以及嵌入式控制装置领域掌握尖端技术。

IMBG65R020M2H

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数据:

简介: CoolSiC™ MOSFET 650 V G2 in TO-263-7 package

Qualification:  Industrial
R[thJC] max:  0.46K/W
I[D ](@25°C) max:  91.0A
Operating Temperature max:  175.0°C
Polarity:  N
R[DS (on)](@ Tj = 25°C):  20.0mΩ
库存数量:
询 价

AIMDQ75R020M1H

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数据:

简介: The CoolSiC™ Automotive MOSFET 750 V G1 is a highly robust SiC MOSFET for the best system performance and reliability.

I[D ](@25°C) max:  81.0A
Operating Temperature max:  175.0°C
Polarity:  N
Qualification:  Automotive
R[DS (on)](@ Tj = 25°C):  20.0mΩ
Technology:  CoolSiC™ G1
库存数量:
询 价

IMDQ75R027M1H

分类:
数据:

简介: The CoolSiC™ MOSFET 750 V G1 is a highly robust SiC MOSFET for the best system performance and reliability.

I[D ](@25°C) max:  64.0A
Operating Temperature max:  175.0°C
Polarity:  N
Qualification:  Industrial
R[DS (on)](@ Tj = 25°C):  27.0mΩ
Technology:  CoolSiC™ G1
库存数量:
询 价

F4-33MR12W1M1H_B76

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数据:

简介: CoolSiC™ MOSFET fourpack module 1200 V

Applications:  ESS
Applications:  Solar
Applications:  EV Charger
Applications:  UPS
Configuration:  Fourpack
Features:  PressFIT
库存数量:
询 价

AIMZH120R030M1T

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数据:

简介: Automotive 1200V Silicon-carbide (SiC) Trench Power MOSFET in TO247-4L (thin leads), 30mΩ

V[DS] max:  1200.0V
I[D ](@25°C) max:  69.0A
Qualification:  Automotive
Polarity:  N
Operating Temperature max:  175.0°C
R[DS (on)](@ Tj = 25°C):  30.0mΩ
库存数量:
询 价

AIMZA75R020M1H

分类:
数据:

简介: The CoolSiC™ Automotive MOSFET 750 V G1 is a highly robust SiC MOSFET for the best combination of system performance and reliability

I[D ] max:  75.0A
Operating Temperature max:  175.0°C
Polarity:  N
Qualification:  Automotive
R[DS (on)](@ Tj = 25°C):  20.0mΩ
V[DS] max:  750.0V
库存数量:
询 价

DF14MR12W1M1HF_B67

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数据:

简介: Booster 1200 V CoolSiC™ MOSFET Module

R[DS (on)](@ Tj = 25°C):  27.0mΩ
Qualification:  Industrial
Housing:  Easy 1B
Features:  PressFIT
Configuration:  Booster
Dimensions(width):  33.8mm
库存数量:
询 价

IMDQ75R020M1H

分类:
数据:

简介: The CoolSiC™ MOSFET 750 V G1 is a highly robust SiC MOSFET for the best system performance and reliability.

I[D ](@25°C) max:  81.0A
Operating Temperature max:  175.0°C
Polarity:  N
Qualification:  Industrial
R[DS (on)](@ Tj = 25°C):  20.0mΩ
Technology:  CoolSiC™ G1
库存数量:
询 价

AIMZHN120R020M1T

分类:
数据:

简介: Automotive 1200V Silicon-carbide (SiC) Trench Power MOSFET in TO247-4L, 20mΩ

I[D ](@25°C) max:  100.0A
Operating Temperature max:  175.0°C
Polarity:  N
Qualification:  Automotive
R[DS (on)](@ Tj = 25°C):  19.0mΩ
V[DS] max:  1200.0V
库存数量:
询 价

AIMZH120R020M1T

分类:
数据:

简介: Automotive 1200V Silicon-carbide (SiC) Trench Power MOSFET in TO247-4L (thin leads), 20mΩ

V[DS] max:  1200.0V
R[DS (on)](@ Tj = 25°C):  19.0mΩ
I[D ](@25°C) max:  100.0A
Qualification:  Automotive
Polarity:  N
Operating Temperature max:  175.0°C
库存数量:
询 价