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Infineon 英飞凌专注于迎接现代社会的三大科技挑战：高能效、移动性和安全性，为汽车和工业功率器件、芯片卡和安全应用提供半导体和系统解决方案。英飞凌的产品素以高可靠性、卓越质量和创新性著称，并在模拟和混合信号、射频、功率以及嵌入式控制装置领域掌握尖端技术。

IMYH200R024M1H

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数据:

简介: CoolSiC™ 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package

C[iss]: 4850.0pF

C[oss]: 161.0pF

Mounting: THT

I[D ](@25°C) max: 89.0A

P[tot](@ T[A]=25°C) max: 576.0W

Pin Count: 4.0Pins

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IMBG120R026M2H

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数据:

简介: CoolSiC™ MOSFET discrete 1200 V G2 in TO-263-7 package

C[iss]: 1990.0pF

C[oss]: 85.0pF

Operating Temperature max: 175.0°C

I[D ](@ T[C]=25°C): 75.0A

Mounting: SMD

P[tot](@ T[A]=25°C) max: 335.0W

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IMT65R022M1H

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数据:

简介: CoolSiC™ MOSFET discrete 650 V in TOLL package

Operating Temperature max: 175.0°C

Polarity: N

Qualification: Industrial

R[DS (on)](@ Tj = 25°C): 22.0mΩ

V[DS] max: 650.0V

Technology: CoolSiC™ G1

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IMZA120R020M1H

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数据:

简介: CoolSiC™ 1200 V, 20 mΩ SiC Trench MOSFET in TO247-4 package

C[iss]: 3460.0pF

C[oss]: 159.0pF

I[D ](@25°C) max: 98.0A

Mounting: THT

Operating Temperature max: 175.0°C

P[tot](@ T[A]=25°C) max: 375.0W

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IMW120R020M1H

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数据:

简介: CoolSiC™ 1200 V, 20 mΩ SiC Trench MOSFET in TO247-3 package

C[iss]: 3460.0pF

C[oss]: 159.0pF

I[D ](@25°C) max: 98.0A

Mounting: THT

Operating Temperature max: 175.0°C

P[tot](@ T[A]=25°C) max: 375.0W

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IMBG120R022M2H

分类:
数据:

简介: CoolSiC™ MOSFET discrete 1200 V G2 in TO-263-7 package

C[iss]: 2330.0pF

C[oss]: 100.0pF

Operating Temperature max: 175.0°C

I[D ](@ T[C]=25°C): 87.0A

Mounting: SMD

P[tot](@ T[A]=25°C) max: 385.0W

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IMZA65R020M2H

分类:
数据:

简介: CoolSiC™ MOSFET 650 V G2 in TO-247-4 package

R[thJC] max: 0.55K/W

Qualification: Industrial

I[D ](@25°C) max: 83.0A

Operating Temperature max: 175.0°C

Polarity: N

R[DS (on)](@ Tj = 25°C): 20.0mΩ

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IMW65R020M2H

分类:
数据:

简介: CoolSiC™ MOSFET 650 V G2 in TO-247-3 package

Qualification: Industrial

R[thJC] max: 0.55K/W

I[D ](@25°C) max: 83.0A

Operating Temperature max: 175.0°C

Polarity: N

R[DS (on)](@ Tj = 25°C): 20.0mΩ

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IMZA75R020M1H

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数据:

简介: The CoolSiC™ MOSFET 750 V G1 is a highly robust SiC MOSFET for the best combination of system performance and reliability

I[D ](@25°C) max: 75.0A

Operating Temperature max: 175.0°C

Polarity: N

Qualification: Industrial

R[DS (on)](@ Tj = 25°C): 20.0mΩ

V[DS] max: 750.0V

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IMBG120R030M1H

分类:
数据:

简介: CoolSiC™ 1200 V SiC Trench MOSFET in TO-263-7 package

C[iss]: 2290.0pF

C[oss]: 105.0pF

I[D ](@25°C) max: 56.0A

Mounting: SMD

Operating Temperature max: 175.0°C

P[tot](@ T[A]=25°C) max: 300.0W

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