INFINEON

Infineon 英飞凌专注于迎接现代社会的三大科技挑战：高能效、移动性和安全性，为汽车和工业功率器件、芯片卡和安全应用提供半导体和系统解决方案。英飞凌的产品素以高可靠性、卓越质量和创新性著称，并在模拟和混合信号、射频、功率以及嵌入式控制装置领域掌握尖端技术。

IMW120R030M1H

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数据:

简介: CoolSiC™ 1200V SiC Trench MOSFET in TO247-3 package

Qualification: Industrial

R[DS (on)](@18V): 30.0mΩ

C[iss]: 2120.0pF

C[oss]: 116.0pF

I[D ](@25°C) max: 56.0A

Mounting: THT

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IMT65R030M1H

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数据:

简介: CoolSiC™ MOSFET discrete 650 V in TOLL package

Operating Temperature max: 175.0°C

Polarity: N

Qualification: Industrial

R[DS (on)](@ Tj = 25°C): 30.0mΩ

V[DS] max: 650.0V

Technology: CoolSiC™ G1

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AIMBG120R030M1

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数据:

简介: Automotive 1200V Silicon-carbide (SiC) Trench Power MOSFET in D2PAK-7L, 30mΩ

I[D ](@25°C) max: 58.0A

Operating Temperature max: 175.0°C

V[DS] max: 1200.0V

Qualification: Automotive

VGSS, off: 0

VGSS, on: 20

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IMZA120R030M1H

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数据:

简介: CoolSiC™ 1200 V, 30 mΩ SiC Trench MOSFET in TO-247-4 package

C[iss]: 2160.0pF

C[oss]: 99.0pF

Operating Temperature max: 175.0°C

Pin Count: 4.0Pins

Polarity: N

Q[G]: 52.0nC

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IMBG120R040M2H

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数据:

简介: CoolSiC™ MOSFET discrete 1200 V G2 in TO-263-7 package

C[iss]: 1310.0pF

C[oss]: 55.0pF

Operating Temperature max: 175.0°C

I[D ](@ T[C]=25°C): 52.0A

Mounting: SMD

P[tot](@ T[A]=25°C) max: 250.0W

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AIMZHN120R030M1T

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数据:

简介: Automotive 1200V Silicon-carbide (SiC) Trench Power MOSFET in TO247-4L, 30mΩ

I[D ](@25°C) max: 69.0A

Operating Temperature max: 175.0°C

Polarity: N

Qualification: Automotive

R[DS (on)](@ Tj = 25°C): 30.0mΩ

V[DS] max: 1200.0V

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IMT65R039M1H

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数据:

简介: CoolSiC™ MOSFET discrete 650 V in TOLL package

Operating Temperature max: 175.0°C

Polarity: N

Qualification: Industrial

R[DS (on)](@ Tj = 25°C): 39.0mΩ

V[DS] max: 650.0V

Technology: CoolSiC™ G1

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AIMBG75R027M1H

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数据:

简介: The CoolSiC™ Automotive MOSFET 750 V G1 is a highly robust SiC MOSFET for the best system performance and reliability.

I[D ](@25°C) max: 64.0A

Operating Temperature max: 175.0°C

Polarity: N

Qualification: Automotive

R[DS (on)](@ Tj = 25°C): 27.0mΩ

Technology: CoolSiC™ G1

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IMZA75R027M1H

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数据:

简介: The CoolSiC™ MOSFET 750 V G1 is a highly robust SiC MOSFET for the best combination of system performance and reliability

I[D ](@25°C) max: 60.0A

Operating Temperature max: 175.0°C

Polarity: N

Qualification: Industrial

R[DS (on)](@ Tj = 25°C): 27.0mΩ

V[DS] max: 750.0V

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FS28MR12W1M1H_B11

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数据:

简介: CoolSiC™ MOSFET sixpack module 1200 V

Configuration: Sixpack

Features: PressFIT

Housing: Easy 1B

Qualification: Industrial

R[DS (on)](@ Tj = 25°C): 26.4mΩ

Dimensions(length): 62.8mm

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