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Infineon 英飞凌专注于迎接现代社会的三大科技挑战： 高能效、 移动性和 安全性，为汽车和工业功率器件、芯片卡和安全应用提供半导体和系统解决方案。英飞凌的产品素以高可靠性、卓越质量和创新性著称，并在模拟和混合信号、射频、功率以及嵌入式控制装置领域掌握尖端技术。

IMWH170R650M1

分类:
数据:

简介: CoolSiC™ MOSFET discrete 1700 V, 650 mΩ G1 in TO247-3-HCC package

Pin Count:  3.0Pins
Qualification:  Industrial
V[DS] max:  1700.0V
Technology:  CoolSiC™ G1
库存数量:
询 价

FF1MR12KM1HP

分类:
数据:

简介: CoolSiC™ MOSFET half bridge module 1200 V

Applications:  EV Charger
Applications:  UPS
Applications:  ESS
Applications:  Solar
Configuration:  Half-bridge
Features:  TIM
库存数量:
询 价

IMZA65R007M2H

分类:
数据:

简介: CoolSiC™ MOSFET 650 V G2 in TO-247-4 package

Qualification:  Industrial
R[thJC] max:  0.24K/W
I[D ](@25°C) max:  210.0A
Operating Temperature max:  175.0°C
Polarity:  N
R[DS (on)](@ Tj = 25°C):  6.7mΩ
库存数量:
询 价

IMWH170R1K0M1

分类:
数据:

简介: CoolSiC™ MOSFET discrete 1700 V, 1000 mΩ G1 in TO247-3-HCC package

Pin Count:  3.0Pins
Qualification:  Industrial
V[DS] max:  1700.0V
Technology:  CoolSiC™ G1
库存数量:
询 价

IMBG65R057M1H

分类:
数据:

简介: SiC MOSFET in compact SMD package

Operating Temperature max:  175.0°C
P[tot] max:  161.0W
Polarity:  N
Qualification:  Industrial
R[DS (on)](@ Tj = 25°C):  57.0mΩ
V[DS] max:  650.0V
库存数量:
询 价

FF6MR12KM1H

分类:
数据:

简介: Half-bridge 1200 V CoolSiC™ MOSFET Module

Applications:  EV Charger
Applications:  UPS
Applications:  ESS
Applications:  Solar
Configuration:  Half-bridge
Qualification:  Industrial
库存数量:
询 价

IMZA65R057M1H

分类:
数据:

简介: CoolSiC™ MOSFET 650V – SiC MOSFET delivering reliable and cost-effective performance in TO247 4-pin package

Operating Temperature max:  175.0°C
Polarity:  N
Qualification:  Industrial
R[DS (on)](@ Tj = 25°C):  57.0mΩ
V[DS] max:  650.0V
Technology:  CoolSiC™ G1
库存数量:
询 价

IMW65R057M1H

分类:
数据:

简介: CoolSiC™ MOSFET 650V – SiC MOSFET delivering reliable and cost-effective performance in TO247 3–pin package

Operating Temperature max:  175.0°C
Polarity:  N
Qualification:  Industrial
R[DS (on)](@ Tj = 25°C):  57.0mΩ
V[DS] max:  650.0V
Technology:  CoolSiC™ G1
库存数量:
询 价

IMW65R048M1H

分类:
数据:

简介: CoolSiC™ MOSFET 650V – SiC MOSFET delivering reliable and cost-effective performance in TO247 3–pin package

P[tot] max:  125.0W
Polarity:  N
Qualification:  Industrial
R[DS (on)](@ Tj = 25°C):  48.0mΩ
V[DS] max:  650.0V
Technology:  CoolSiC™ G1
库存数量:
询 价

IMBG65R039M1H

分类:
数据:

简介: SiC MOSFET in compact SMD package

Operating Temperature max:  175.0°C
P[tot] max:  211.0W
Polarity:  N
Qualification:  Industrial
R[DS (on)](@ Tj = 25°C):  39.0mΩ
V[DS] max:  650.0V
库存数量:
询 价