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INFINEON

Infineon 英飞凌专注于迎接现代社会的三大科技挑战： 高能效、 移动性和 安全性，为汽车和工业功率器件、芯片卡和安全应用提供半导体和系统解决方案。英飞凌的产品素以高可靠性、卓越质量和创新性著称，并在模拟和混合信号、射频、功率以及嵌入式控制装置领域掌握尖端技术。

FF6MR12W2M1H_B11

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简介: CoolSiC™ MOSFET half-bridge module 1200 V

Applications:  ESS, EV Charger, Solar, UPS
Configuration:  Half-bridge
Dimensions(width):  48.0mm
Dimensions(length):  62.8mm
Features:  PressFIT
Qualification:  Industrial
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IMZA65R030M1H

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数据:

简介: CoolSiC™ MOSFET 650V – SiC MOSFET delivering reliable and cost-effective performance in TO247 4-pin package

Operating Temperature max:  175.0°C
Polarity:  N
Qualification:  Industrial
R[DS (on)](@ Tj = 25°C):  30.0mΩ
V[DS] max:  650.0V
Technology:  CoolSiC™ G1
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IMZA65R048M1H

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数据:

简介: CoolSiC™ MOSFET 650V – SiC MOSFET delivering reliable and cost-effective performance in TO247 4-pin package

P[tot] max:  125.0W
Polarity:  N
Qualification:  Industrial
R[DS (on)](@ Tj = 25°C):  48.0mΩ
V[DS] max:  650.0V
Technology:  CoolSiC™ G1
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IMZ120R030M1H

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数据:

简介: CoolSiC™ 1200V SiC Trench MOSFET in TO247-4 package

Qualification:  Industrial
R[DS (on)](@18V):  30.0mΩ
C[iss]:  2120.0pF
C[oss]:  116.0pF
I[D ](@25°C) max:  56.0A
Mounting:  THT
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IMBG65R048M1H

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数据:

简介: SiC MOSFET in compact SMD package

Operating Temperature max:  175.0°C
P[tot] max:  183.0W
Polarity:  N
Qualification:  Industrial
R[DS (on)](@ Tj = 25°C):  48.0mΩ
V[DS] max:  650.0V
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IMW120R045M1

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数据:

简介: CoolSiC™ 1200V SiC Trench MOSFET in TO247-3 package

Qualification:  Industrial
R[DS (on)](@15V):  45.0mΩ
C[iss]:  1900.0pF
C[oss]:  115.0pF
I[D ](@25°C) max:  52.0A
Mounting:  THT
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IMBG65R022M1H

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数据:

简介: SiC MOSFET in compact SMD package

Operating Temperature max:  175.0°C
P[tot] max:  300.0W
Polarity:  N
Qualification:  Industrial
R[DS (on)](@ Tj = 25°C):  22.0mΩ
V[DS] max:  650.0V
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IMZA65R039M1H

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数据:

简介: CoolSiC™ MOSFET 650V – SiC MOSFET delivering reliable and cost-effective performance in TO247 4-pin package

Operating Temperature max:  175.0°C
Polarity:  N
Qualification:  Industrial
R[DS (on)](@ Tj = 25°C):  39.0mΩ
V[DS] max:  650.0V
Technology:  CoolSiC™ G1
库存数量:
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IMZ120R045M1

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数据:

简介: CoolSiC™ 1200V SiC Trench MOSFET in TO247-4 package

Qualification:  Industrial
R[DS (on)](@ Tj = 25°C):  45.0mΩ
C[iss]:  1900.0pF
C[oss]:  115.0pF
I[D ](@25°C) max:  52.0A
Mounting:  THT
库存数量:
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IMW65R027M1H

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数据:

简介: CoolSiC™ MOSFET 650V – SiC MOSFET delivering reliable and cost-effective performance in TO247 3–pin package

P[tot] max:  189.0W
Pin Count:  3.0Pins
Polarity:  N
Qualification:  Industrial
R[DS (on)](@ Tj = 25°C):  27.0mΩ
V[DS] max:  650.0V
库存数量:
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