INFINEON

Infineon 英飞凌专注于迎接现代社会的三大科技挑战：高能效、移动性和安全性，为汽车和工业功率器件、芯片卡和安全应用提供半导体和系统解决方案。英飞凌的产品素以高可靠性、卓越质量和创新性著称，并在模拟和混合信号、射频、功率以及嵌入式控制装置领域掌握尖端技术。

IMDQ75R008M1H

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数据:

简介: The CoolSiC™ MOSFET 750 V is a highly robust SiC MOSFET for the best system performance and reliability.

I[D ](@25°C) max: 173.0A

Operating Temperature max: 175.0°C

Polarity: N

Qualification: Industrial

R[DS (on)](@ Tj = 25°C): 7.8mΩ

V[DS] max: 750.0V

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IMBG65R030M1H

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数据:

简介: SiC MOSFET in compact SMD package

Operating Temperature max: 175.0°C

P[tot] max: 234.0W

Polarity: N

Qualification: Industrial

R[DS (on)](@ Tj = 25°C): 30.0mΩ

V[DS] max: 650.0V

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IMZA65R027M1H

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数据:

简介: CoolSiC™ MOSFET 650V – SiC MOSFET delivering reliable and cost-effective performance in TO247 4-pin package

P[tot] max: 189.0W

Polarity: N

Qualification: Industrial

R[DS (on)](@ Tj = 25°C): 27.0mΩ

V[DS] max: 650.0V

Technology: CoolSiC™ G1

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F4-11MR12W2M1_B76

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数据:

简介: Fourpack 1200 V CoolSiC™ MOSFET Module

Configuration: Fourpack

Applications: ESS

Applications: EV Charger

Applications: Solar

Applications: UPS

Dimensions(width): 48.0mm

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AIMDQ75R008M1H

分类:
数据:

简介: The CoolSiC™ MOSFET 750 V is a highly robust SiC MOSFET for the best system performance and reliability.

I[D ](@25°C) max: 173.0A

Operating Temperature max: 175.0°C

Polarity: N

Qualification: Automotive

R[DS (on)](@ Tj = 25°C): 7.8mΩ

V[DS] max: 750.0V

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IMW65R039M1H

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数据:

简介: CoolSiC™ MOSFET 650V – SiC MOSFET delivering reliable and cost-effective performance in TO247 3–pin package

Operating Temperature max: 175.0°C

Polarity: N

Qualification: Industrial

R[DS (on)](@ Tj = 25°C): 39.0mΩ

V[DS] max: 650.0V

Technology: CoolSiC™ G1

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IMW65R030M1H

分类:
数据:

简介: CoolSiC™ MOSFET 650V – SiC MOSFET delivering reliable and cost-effective performance in TO247 3–pin package

Operating Temperature max: 175.0°C

Polarity: N

Qualification: Industrial

R[DS (on)](@ Tj = 25°C): 30.0mΩ

V[DS] max: 650.0V

Technology: CoolSiC™ G1

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AIMZH120R120M1T

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数据:

简介: Automotive 1200V Silicon-carbide (SiC) Trench Power MOSFET in TO247-4L (thin leads), 120mΩ

V[DS] max: 1200.0V

R[DS (on)](@ Tj = 25°C): 117.0mΩ

I[D ](@25°C) max: 22.0A

Qualification: Automotive

Polarity: N

Operating Temperature max: 175.0°C

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IKQ50N120CH7

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数据:

简介: 1200 V, 50 A IGBT with anti-parallel diode in TO-247PLUS 3pin package

E[off](Hard Switching): 2.57mJ

E[on]: 3.96mJ

I[C](@ 100°) max: 62.0A

I[C](@ 25°) max: 71.0A

I[Cpuls] max: 200.0A

I[F] max: 66.0A

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IKY100N120CH7

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数据:

简介: 1200 V, 100 A IGBT with anti-parallel diode in TO-247PLUS 4pin package

E[off](Hard Switching): 6.03mJ

E[on]: 3.25mJ

I[C](@ 100°) max: 158.0A

I[C](@ 25°) max: 212.0A

I[Cpuls] max: 400.0A

I[F] max: 142.0A

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