INFINEON
Infineon 英飞凌专注于迎接现代社会的三大科技挑战： 高能效、 移动性和 安全性，为汽车和工业功率器件、芯片卡和安全应用提供半导体和系统解决方案。英飞凌的产品素以高可靠性、卓越质量和创新性著称，并在模拟和混合信号、射频、功率以及嵌入式控制装置领域掌握尖端技术。
I[C(nom)] / I[F(nom)]: 660.0A
V[CE(sat)](Tvj=25°C typ): 1.1V
V[F]: 1.45V
Technology: IGBT EDT2
Applications: CAV
Applications: eMobility
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Applications: Drives
Applications: CAV
Applications: eMobility
Applications: Hybrid Electric Vehicles
Configuration: Sixpack
Cooling Concept: PinFin baseplate
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I[C(nom)] / I[F(nom)]: 820.0A
V[CE(sat)](Tvj=25°C typ): 1.1V
V[F](Tvj=25°C typ): 1.45V
Technology: IGBT EDT2
Features: PinFin Baseplate, Short Tabs
Applications: CAV
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I[C(nom)] / I[F(nom)]: 50.0A
V[CE(sat)](Tvj=25°C typ): 1.5V
V[F](Tvj=25°C typ): 1.65V
Technology: IGBT HighSpeed 3
Features: PressFIT
Applications: Welding
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I[C(nom)] / I[F(nom)]: 50.0A
V[CE(sat)](Tvj=25°C typ): 1.45V
V[F](Tvj=25°C typ): 1.55V
Technology: IGBT3 - E3
Features: PressFIT
Applications: Hybrid Electric Vehicles
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Configuration: Half-bridge module
Cooling Concept: Indirect cooling
Dimensions(length): 51.0mm
Dimensions(width): 42.5mm
Features: PressFIT
Housing: EasyPACK™ 2B
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I[C(nom)] / I[F(nom)]: 900.0A
V[CE(sat)](Tvj=25°C typ): 1.1V
V[F](Tvj=25°C typ): 1.4V
Technology: IGBT EDT2
Features: PinFin
Applications: eMobility
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I[C] max: 15.0A
V[DS] max: 600.0V
V[GE(th)] max: 5.7V
Technology: IGBT3 Fast
V[CE(sat)] max: 2.05V
V[CE] max: 600.0V
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I[C(nom)] / I[F(nom)]: 75.0A
V[CE(sat)](Tvj=25°C typ): 1.5V
V[F](Tvj=25°C typ): 1.65V
Technology: IGBT HighSpeed 3
Features: PressFIT
Applications: Welding
| 库存数量: |
I[C(nom)] / I[F(nom)]: 900.0A
V[CE(sat)](Tvj=25°C typ): 1.1V
V[F](Tvj=25°C typ): 1.4V
Technology: IGBT EDT2
Features: PinFin
Applications: eMobility
| 库存数量: |