INFINEON

Infineon 英飞凌专注于迎接现代社会的三大科技挑战: 高能效、 移动性和 安全性,为汽车和工业功率器件、芯片卡和安全应用提供半导体和系统解决方案。英飞凌的产品素以高可靠性、卓越质量和创新性著称,并在模拟和混合信号、射频、功率以及嵌入式控制装置领域掌握尖端技术。

C[L ]: 30.0pF I[EFT ]: 60A I[R]: 1.0nA I[PP]: 11A Protected Lines: 1 R[dyn](forward): 0.07Ω R[dyn](reverse): 0.07Ω V[ESD] max: 30.0kV V[cl typ. reverse](TLP 16A): 5.8 V[cl typ. reverse](@16A): 5.8V V[WM] max: 3.3V
I[R] max: 50.0nA V[ESD] max: 30.0kV R[dyn](reverse): 0.13Ω C[L ]: 14.0pF R[dyn](forward): 0.13Ω I[PP]: 8A I[EFT ]: 40A Protected Lines: 1 V[WM]: 3.3V V[cl typ. reverse](@16A): 7.0V V[cl typ. reverse](TLP 16A): 7 V

ESD254-B1-W01005

分类: 半导体分立器件和附件 / 二极管 / 普通二极管 / 瞬态抑制二极管
数据:

简介: High Operating Voltage, Multipurpose, Bi Directional ESD/ Transient Protection Diode (TVS: transient voltage suppressor)

C[L ]: 2.5pF Protected Lines: 1 R[dyn](reverse): 0.38Ω R[dyn](forward): 0.38Ω V[ESD] max: 15.0kV V[cl typ. reverse](@16A): 33.5V V[cl typ. reverse](TLP 16A): 33.5V V[WM] max: 24.0V I[R]: 1.0nA I[PP]: 2 A I[EFT ]: 40 A
C[L ]: 6.0pF V[ESD] max: 15.0kV R[dyn](reverse): 0.09Ω R[dyn](forward): 0.09Ω I[R]: 1.0nA I[EFT ]: 50A I[PP]: 4.0A Protected Lines: 1 V[WM] max: 3.3V V[cl typ. reverse](TLP 30A): 7.4V V[cl typ. reverse](TLP 16A): 6 A
C[L ]: 2.8pF I[EFT ]: 40A I[R] max: 100.0nA I[PP]: 3A Protected Lines: 1 R[dyn](reverse): 0.3Ω R[dyn](forward): 0.15Ω V[ESD] max: 15.0kV V[WM] max: 24.0V V[cl typ. reverse](TLP 30A): 36.5V V[cl typ. reverse](TLP 16A): 32.5 V
C[L ]: 9.0pF V[ESD] max: 25.0kV R[dyn](reverse): 0.3Ω R[dyn](forward): 0.18Ω I[R]: 1.0nA Protected Lines: 1 V[WM] max: 14.0V V[cl typ. reverse](@16A): 26.0V V[cl typ. reverse](TLP 16A): 26 V I[EFT ]: 60 A I[PP]: 3 A
I[R]: 1.0nA I[R] max: 10.0µA V[ESD] max: 30.0kV R[dyn](reverse): 0.22Ω C[L ]: 48.0pF R[dyn](forward): 0.11Ω I[PP]: 5A I[EFT ]: 80A Protected Lines: 2 V[WM]: 24.0V

ESDF200-B1-W0201

分类: 半导体分立器件和附件 / 二极管 / 普通二极管 / 瞬态抑制二极管
数据:

简介: Bi-directional ESD protection and EMI filter device, 3.3 V, 65 pF

Protected Lines: 1 C[L ]: 65.0pF V[WM] max: 3.3V V[cl typ. reverse](@16A): 5.4V R[dyn](forward): 0.05Ω R[dyn](reverse): 0.05Ω V[ESD] max: 20.0kV I[EFT ]: 80A I[PP]: 11A

ESD111-B1-W0201

分类: 半导体分立器件和附件 / 二极管 / 普通二极管 / 瞬态抑制二极管
数据:

简介: Low Clamping Voltage, Low Capacitance, Bi Directional ESD/ Transient Protection Diode (TVS: transient voltage suppressor)

C[L ]: 0.12pF I[EFT ]: 20A I[R] max: 20.0nA Protected Lines: 1 R[dyn](reverse): 1.29Ω R[dyn](forward): 1.29Ω V[ESD] max: 14.0kV V[cl typ. reverse](TLP 16A): 30 V[WM] max: 5.5V C[L ] max: 0.25pF V[WM] min: -5.5V I[R]: 0.1nA I[PP]: 2 A
I[R]: 1.0nA V[ESD] max: 30.0kV R[dyn](reverse): 0.29Ω C[L ]: 6.0pF R[dyn](forward): 0.29Ω I[PP]: 5.0A I[EFT ]: 50A Protected Lines: 1 V[WM] max: 13.2V V[cl typ. reverse](@16A): 17.0V V[cl typ. reverse](TLP 16A): 17 V