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ISA170170N04LMDS

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数据:

简介: OptiMOS™ Dual N+N channel power MOSFET 40 V in SO-8 package

I[D ](@25°C) max: 9.6A

Operating Temperature max: 150.0°C

Package: SO-8

Polarity: N+N

Q[G](typ @4.5V): 6.0nC

Q[G](typ @10V): 13.0nC

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IMZC120R078M2H

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数据:

简介: CoolSiC™ MOSFET discrete 1200 V G2 in TO-247 4pin with high creepage package

C[iss]: 700.0pF

C[oss]: 28.0pF

I[D ](@ TC=25°C) max: 28.0A

Mounting: THT

Operating Temperature max: 175.0°C

P[tot](@ TA=25°C) max: 143.0W

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IMZC120R053M2H

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数据:

简介: CoolSiC™ MOSFET discrete 1200 V G2 in TO-247 4pin with high creepage package

C[iss]: 1010.0pF

C[oss]: 41.0pF

I[D ](@ TC=25°C) max: 38.0A

Mounting: THT

Operating Temperature max: 175.0°C

P[tot](@ TA=25°C) max: 182.0W

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IMZC120R017M2H

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数据:

简介: CoolSiC™ MOSFET discrete 1200 V G2 in TO-247 4pin with high creepage package

C[iss]: 2910.0pF

C[oss]: 126.0pF

I[D ](@ TC=25°C) max: 97.0A

Mounting: THT

Operating Temperature max: 175.0°C

P[tot](@ TA=25°C) max: 382.0W

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IMZC120R012M2H

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数据:

简介: CoolSiC™ MOSFET discrete 1200 V G2 in TO-247 4pin with high creepage package

C[iss]: 4050.0pF

C[oss]: 176.0pF

I[D ](@ TC=25°C) max: 129.0A

Mounting: THT

Operating Temperature max: 175.0°C

P[tot](@ TA=25°C) max: 480.0W

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IMZC120R040M2H

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数据:

简介: CoolSiC™ MOSFET discrete 1200 V G2 in TO-247 4pin with high creepage package

C[iss]: 1310.0pF

C[oss]: 55.0pF

I[D ](@ TC=25°C) max: 48.0A

Mounting: THT

Operating Temperature max: 175.0°C

P[tot](@ TA=25°C) max: 218.0W

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IMZC120R034M2H

分类:
数据:

简介: CoolSiC™ MOSFET discrete 1200 V G2 in TO-247 4pin with high creepage package

C[iss]: 1510.0pF

C[oss]: 64.0pF

I[D ](@ TC=25°C) max: 55.0A

Mounting: THT

Operating Temperature max: 175.0°C

P[tot](@ TA=25°C) max: 244.0W

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IMZC120R022M2H

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数据:

简介: CoolSiC™ MOSFET discrete 1200 V G2 in TO-247 4pin with high creepage package

C[iss]: 2330.0pF

C[oss]: 100.0pF

I[D ](@ TC=25°C) max: 80.0A

Mounting: THT

Operating Temperature max: 175.0°C

P[tot](@ TA=25°C) max: 329.0W

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IMZC120R026M2H

分类:
数据:

简介: CoolSiC™ MOSFET discrete 1200 V G2 in TO-247 4pin with high creepage package

C[iss]: 1990.0pF

C[oss]: 85.0pF

I[D ](@ TC=25°C) max: 69.0A

Mounting: THT

Operating Temperature max: 175.0°C

P[tot](@ TA=25°C) max: 289.0W

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IMDQ65R020M2H

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数据:

简介: CoolSiC™ MOSFET 650 V G2 in Q-DPAK top-side cooling package, 20 mΩ

I[D ](@25°C) max: 97.0A

Operating Temperature max: 175.0°C

Package: PG-HDSOP-22

Polarity: N

Qualification: Industrial

R[DS (on)](@ Tj = 25°C): 20.0mΩ

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