INFINEON

Infineon 英飞凌专注于迎接现代社会的三大科技挑战：高能效、移动性和安全性，为汽车和工业功率器件、芯片卡和安全应用提供半导体和系统解决方案。英飞凌的产品素以高可靠性、卓越质量和创新性著称，并在模拟和混合信号、射频、功率以及嵌入式控制装置领域掌握尖端技术。

IMDQ65R010M2H

分类:
数据:

简介: CoolSiC™ MOSFET 650 V G2 in Q-DPAK top-side cooling package, 10 mΩ

I[D ](@25°C) max: 154.0A

Operating Temperature max: 175.0°C

Package: PG-HDSOP-22

Polarity: N

Qualification: Industrial

R[DS (on)](@ Tj = 25°C): 10.0mΩ

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IMDQ65R007M2H

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数据:

简介: CoolSiC™ MOSFET 650 V G2 in Q-DPAK top-side cooling package, 7 mΩ

I[D ](@25°C) max: 196.0A

Operating Temperature max: 175.0°C

Package: PG-HDSOP-22

Polarity: N

Qualification: Industrial

R[DS (on)](@ Tj = 25°C): 6.7mΩ

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IMT65R020M2H

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数据:

简介: CoolSiC™ MOSFET 650 V G2 in TOLL package, 20 mΩ

I[D ](@25°C) max: 105.0A

Operating Temperature max: 175.0°C

Package: TOLL

Polarity: N

Qualification: Industrial

R[DS (on)](@ Tj = 25°C): 20.0mΩ

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IMT65R010M2H

分类:
数据:

简介: CoolSiC™ MOSFET 650 V G2 in TOLL package, 10 mΩ

I[D ](@25°C) max: 168.0A

Operating Temperature max: 175.0°C

Package: TOLL

Polarity: N

Qualification: Industrial

R[DS (on)](@ Tj = 25°C): 10.0mΩ

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IMT65R033M2H

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数据:

简介: CoolSiC™ MOSFET 650 V G2 in TOLL package, 33 mΩ

I[D ](@25°C) max: 68.0A

Operating Temperature max: 175.0°C

Package: TOLL

Polarity: N

Qualification: Industrial

R[DS (on)](@ Tj = 25°C): 33.0mΩ

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IMT65R026M2H

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数据:

简介: CoolSiC™ MOSFET 650 V G2 in TOLL package, 26 mΩ

I[D ](@25°C) max: 81.0A

Operating Temperature max: 175.0°C

Package: TOLL

Polarity: N

Qualification: Industrial

R[DS (on)](@ Tj = 25°C): 26.0mΩ

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IMT65R015M2H

分类:
数据:

简介: CoolSiC™ MOSFET 650 V G2 in TOLL package, 15 mΩ

I[D ](@25°C) max: 131.0A

Operating Temperature max: 175.0°C

Package: TOLL

Polarity: N

Qualification: Industrial

R[DS (on)](@ Tj = 25°C): 14.5mΩ

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IM06B15AC1

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数据:

简介: CIPOS™ Mini 600 V 15 A, three-phase intelligent power module

Additional Information: Electrical

Built in NTC: Yes

Configuration: 3 Phase Open Emitter

Encryption: no

I[C](@ 25°): 15.0A

Language: PLECS

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IKWH30N67PR7

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数据:

简介: 670 V, 30 A TRENCHSTOP™ IGBT7 PR7 with anti-parallel diode in TO-247-3pin high creepage and clearance package

E[off](Hard Switching): 0.26mJ

E[on]: 0.45mJ

I[C](@ 100°) max: 43.0A

I[C](@ 25°) max: 71.0A

I[Cpuls] max: 90.0A

I[Fpuls] max: 5.0A

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IKWH40N67PR7

分类:
数据:

简介: 670 V, 40 A TRENCHSTOP™ IGBT7 PR7 with anti-parallel diode in TO-247-3pin high creepage and clearance package

E[off](Hard Switching): 0.4mJ

E[on]: 0.66mJ

I[C](@ 100°) max: 54.0A

I[C](@ 25°) max: 88.0A

I[Cpuls] max: 120.0A

I[Fpuls] max: 5.0A

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