INFINEON
Infineon 英飞凌专注于迎接现代社会的三大科技挑战： 高能效、 移动性和 安全性，为汽车和工业功率器件、芯片卡和安全应用提供半导体和系统解决方案。英飞凌的产品素以高可靠性、卓越质量和创新性著称，并在模拟和混合信号、射频、功率以及嵌入式控制装置领域掌握尖端技术。
Clamping force [kn] max: 56.0
Configuration: Electrical Triggered Phase Control Thyristor
Housing: Disc dia 75mm height 26mm / Ceramic
I[TAVM]: 1810 (180° el sin)
I[TAVM]/T[C] [A/°C](@180° el sin): 1810/85
I[TSM] [A](@10ms, Tvj max): 30700.0
I[TSM]: 30700.0A
R[thJC] [K/kW](@180° el sin) max: 18.4
T[vj] [°C] max: 135.0
V[DRM] / V[RRM] [V]: 1800.0
V[DRM]/ V[RRM (V)]: 1800.0V
V[T]/I[T] [V/kA]: 1.1/1.8 (@Tvj max)
t[q] [µs]: 270.0
∫I2dt [A²s · 103](@10ms, Tvj max): 4713.0
V[DRM]/ V[RRM (V)]: 2600.0V
I[TSM]: 28000.0A
I[TAVM]: 1590 (180 ° el sin)
Configuration: Electrical Triggered Phase Control Thyristor
Housing: Disc dia 100mm height 26mm / Ceramic
V[DRM] / V[RRM] [V]: 2600.0
I[TAVM]/T[C] [A/°C](@180° el sin): 1590/85
I[TSM] [A](@10ms, Tvj max): 28000.0
∫I2dt [A²s · 103](@10ms, Tvj max): 3920.0
V[T]/I[T] [V/kA](@Tvj max): 2.45/5.0
V[T0] [V](@T[vj max]) max: 1.1
r[T] [mΩ](@T[vj max]) max: 0.237
t[q] [µs]: 400.0
R[thJC] [K/kW](@180° el sin) max: 12.5
T[vj] [°C] max: 125.0
Clamping force [kn] max: 65.0
V[DRM]/ V[RRM (V)]: 2200.0V
I[TSM]: 23000.0A
I[TAVM]: 1329 (180 ° el sin)
Configuration: Electrical Triggered Phase Control Thyristor
Housing: Disc dia 75mm height 26mm / Ceramic
V[DRM] / V[RRM] [V]: 2200.0
I[TAVM]/T[C] [A/°C](@180° el sin): 1329/85
I[TSM] [A](@10ms, Tvj max): 23000.0
∫I2dt [A²s · 103](@10ms, Tvj max): 2645.0
V[T]/I[T] [V/kA](@Tvj max): 1.13/1.0
V[T0] [V](@T[vj max]) max: 0.9
r[T] [mΩ](@T[vj max]) max: 0.234
t[q] [µs]: 300.0
R[thJC] [K/kW](@180° el sin) max: 18.4
T[vj] [°C] max: 125.0
Clamping force [kn] max: 45.0
V[DRM]/ V[RRM (V)]: 2800.0V
I[TSM]: 22500.0A
I[TAVM]: 1220 (180 ° el sin)
Configuration: Electrical Triggered Phase Control Thyristor
Housing: Disc dia 75mm height 26mm / Ceramic
V[DRM] / V[RRM] [V]: 2800.0
I[TAVM]/T[C] [A/°C](@180° el sin): 1220/85
I[TSM] [A](@10ms, Tvj max): 22500.0
∫I2dt [A²s · 103](@10ms, Tvj max): 2531.0
V[T]/I[T] [V/kA](@Tvj max): 1.38/1.0
V[T0] [V](@T[vj max]) max: 1.0
r[T] [mΩ](@T[vj max]) max: 0.275
t[q] [µs]: 350.0
R[thJC] [K/kW](@180° el sin) max: 18.4
T[vj] [°C] max: 125.0
Clamping force [kn] max: 45.0
V[DRM]/ V[RRM (V)]: 1600.0V
I[TSM]: 22500.0A
I[TAVM]: 1190 (180 ° el sin)
Configuration: Electrical Triggered Phase Control Thyristor
Housing: Disc dia 75mm height 26mm / Ceramic
V[DRM] / V[RRM] [V]: 1600.0
I[TAVM]/T[C] [A/°C](@180° el sin): 1190/85
I[TSM] [A](@10ms, Tvj max): 22500.0
∫I2dt [A²s · 103](@10ms, Tvj max): 2530.0
V[T]/I[T] [V/kA](@Tvj max): 2.05/5.4
V[T0] [V](@T[vj max]): 0.9
r[T] [mΩ](@T[vj max]): 0.19
t[q] [µs]: 240.0
R[thJC] [K/kW](@180° el sin) max: 23.0
T[vj] [°C] max: 125.0
Clamping force [kn] max: 32.0
V[DRM]/ V[RRM (V)]: 1800.0V
I[TSM]: 22500.0A
I[TAVM]: 1190 (180 ° el sin)
Configuration: Electrical Triggered Phase Control Thyristor
Housing: Disc dia 75mm height 26mm / Ceramic
V[DRM] / V[RRM] [V]: 1800.0
I[TAVM]/T[C] [A/°C](@180° el sin): 1190/85
I[TSM] [A](@10ms, Tvj max): 22500.0
∫I2dt [A²s · 103](@10ms, Tvj max): 2530.0
V[T]/I[T] [V/kA](@Tvj max): 2.05/5.4
V[T0] [V](@T[vj max]) max: 0.9
r[T] [mΩ](@T[vj max]) max: 0.19
t[q] [µs]: 240.0
R[thJC] [K/kW](@180° el sin) max: 23.0
T[vj] [°C] max: 125.0
Clamping force [kn] max: 32.0
V[DRM]/ V[RRM (V)]: 5200.0V
I[TSM]: 54000.0A
I[TAVM]: 2250 (180 ° el sin)
Configuration: Electrical Triggered Phase Control Thyristor
Housing: Disc dia 120mm height 26mm / Ceramic
V[DRM] / V[RRM] [V]: 5200.0
I[TAVM]/T[C] [A/°C](@180° el sin): 2250/85
I[TSM] [A](@10ms, Tvj max): 54000.0
∫I2dt [A²s · 103](@10ms, Tvj max): 14600.0
V[T]/I[T] [V/kA](@Tvj max): 1.85/3.0
V[T0] [V](@T[vj max]) max: 0.81
r[T] [mΩ](@T[vj max]) max: 0.36
t[q] [µs]: 450.0
R[thJC] [K/kW](@180° el sin) max: 6.5
T[vj] [°C] max: 125.0
Clamping force [kn] max: 65.0
V[DRM]/ V[RRM (V)]: 2800.0V
I[TSM]: 40000.0A
I[TAVM]: 2400 (180 ° el sin)
Configuration: Electrical Triggered Phase Control Thyristor
Housing: Disc dia 111mm height 26mm / Ceramic
V[DRM] / V[RRM] [V]: 2800.0
I[TAVM]/T[C] [A/°C](@180° el sin): 2400/85
I[TSM] [A](@10ms, Tvj max): 40000.0
∫I2dt [A²s · 103](@10ms, Tvj max): 8000.0
V[T]/I[T] [V/kA](@Tvj max): 2.65/8.8
V[T0] [V](@T[vj max]) max: 1.05
r[T] [mΩ](@T[vj max]) max: 0.154
t[q] [µs]: 400.0
R[thJC] [K/kW](@180° el sin) max: 8.5
T[vj] [°C] max: 125.0
Clamping force [kn] max: 95.0
V[DRM]/ V[RRM (V)]: 4400.0V
I[TSM]: 16000.0A
I[TAVM]: 930 (180 ° el sin)
Configuration: Electrical Triggered Phase Control Thyristor
Housing: Disc dia 76mm height 26mm / Ceramic
V[DRM] / V[RRM] [V]: 4400.0
I[TAVM]/T[C] [A/°C](@180° el sin): 870/85
I[TSM] [A](@10ms, Tvj max): 16000.0
∫I2dt [A²s · 103](@10ms, Tvj max): 1280.0
V[T]/I[T] [V/kA](@Tvj max): 1.86/1.2
V[T0] [V](@T[vj max]) max: 1.08
r[T] [mΩ](@T[vj max]) max: 0.65
t[q] [µs]: 500.0
R[thJC] [K/kW](@180° el sin) max: 18.5
T[vj] [°C] max: 125.0
Clamping force [kn] max: 24.0
V[DRM]/ V[RRM (V)]: 3600.0V
I[TSM]: 17500.0A
I[TAVM]: 930 (180 ° el sin)
Configuration: Electrical Triggered Phase Control Thyristor
Housing: Disc dia 75mm height 26mm / Ceramic
V[DRM] / V[RRM] [V]: 3600.0
I[TAVM]/T[C] [A/°C](@180° el sin): 930/85
I[TSM] [A](@10ms, Tvj max): 17500.0
∫I2dt [A²s · 103](@10ms, Tvj max): 1530.0
V[T]/I[T] [V/kA](@Tvj max): 2.70/3.6
V[T0] [V](@T[vj max]) max: 1.0
r[T] [mΩ](@T[vj max]) max: 0.43
t[q] [µs]: 500.0
R[thJC] [K/kW](@180° el sin) max: 21.5
T[vj] [°C] max: 125.0
Clamping force [kn] max: 45.0