V[DRM]/ V[RRM (V)]: 5200.0V
I[TSM]: 100000.0A
I[TAVM]: 3880 (180 ° el sin)
Configuration: Electrical Triggered Phase Control Thyristor
Housing: Disc dia 172mm height 35mm / Ceramic
V[DRM] / V[RRM] [V]: 5200.0
I[TAVM]/T[C] [A/°C](@180° el sin): 3880/85
I[TSM] [A](@10ms, Tvj max): 100000.0
∫I2dt [A²s · 103](@10ms, Tvj max): 50000.0
V[T]/I[T] [V/kA](@Tvj max): 1.80/6.0
V[T0] [V](@T[vj max]) max: 0.93
r[T] [mΩ](@T[vj max]) max: 0.145
t[q] [µs]: 550.0
R[thJC] [K/kW](@180° el sin) max: 4.5
T[vj] [°C] max: 125.0
Clamping force [kn] max: 130.0
V[DRM]/ V[RRM (V)]: 2200.0V
I[TSM]: 91000.0A
I[TAVM]: 4340 (180 ° el sin)
Configuration: Electrical Triggered Phase Control Thyristor
Housing: Disc dia 150mm height 26mm / Ceramic
V[DRM] / V[RRM] [V]: 2200.0
I[TAVM]/T[C] [A/°C](@180° el sin): 4340/85
I[TSM] [A](@10ms, Tvj max): 91000.0
∫I2dt [A²s · 103](@10ms, Tvj max): 41400.0
V[T]/I[T] [V/kA](@Tvj max): 1.20/4.0
V[T0] [V](@T[vj max]) max: 0.77
r[T] [mΩ](@T[vj max]) max: 0.107
t[q] [µs]: 250.0
R[thJC] [K/kW](@180° el sin) max: 4.8
T[vj] [°C] max: 125.0
Clamping force [kn] max: 91.0
T2563N80TOHPR
数据:
分类: 半导体分立器件和附件 / 闸流晶体管
描述: 8000 V Light Triggered Phase Control Thyristor Diode Disc
V[DRM]/ V[RRM (V)]: 8000.0V
I[TSM]: 90000.0A
I[TAVM]: 2300 (180 ° el sin)
Configuration: Light Triggered Phase Control Thyristor
Housing: Disc dia 172mm height 40mm / Ceramic
V[DRM] / V[RRM] [V]: 8000.0
I[TAVM]/T[C] [A/°C](@180° el sin): 2300/85
I[TSM] [A](@10ms, Tvj max): 90000.0
∫I2dt [A²s · 103](@10ms, Tvj max): 40500.0
V[T]/I[T] [V/kA](@Tvj max): 2.95/5.0
V[T0] [V](@T[vj max]) max: 1.2
r[T] [mΩ](@T[vj max]) max: 0.35
t[q] [µs]: 550.0
R[thJC] [K/kW](@180° el sin) max: 4.8
T[vj] [°C] max: 120.0
Clamping force [kn] max: 130.0
V[DRM]/ V[RRM (V)]: 8000.0V
I[TSM]: 90000.0A
I[TAVM]: 2620 (180 ° el sin)
Configuration: Electrical Triggered Phase Control Thyristor
Housing: Disc dia 172mm height 35mm / Ceramic
V[DRM] / V[RRM] [V]: 8000.0
I[TAVM]/T[C] [A/°C](@180° el sin): 2620/85
I[TSM] [A](@10ms, Tvj max): 90000.0
∫I2dt [A²s · 103](@10ms, Tvj max): 40500.0
V[T]/I[T] [V/kA](@Tvj max): 2.95/5.0
V[T0] [V](@T[vj max]) max: 1.27
r[T] [mΩ](@T[vj max]) max: 0.336
t[q] [µs]: 550.0
R[thJC] [K/kW](@180° el sin) max: 4.5
T[vj] [°C] max: 125.0
Clamping force [kn] max: 130.0
T3401N36TOFVT
数据:
分类: 半导体分立器件和附件 / 闸流晶体管
描述: 3600 V electrical triggered phase control thyristor disc
Clamping force [kn] max: 91.0
Configuration: Electrical Triggered Phase Control Thyristor
Housing: Disc dia 150mm height 26mm / Ceramic
I[TAVM]/T[C] [A/°C](@180° el sin): 3560/85
I[TAVM]: 3560 (180 ° el sin)
I[TSM]: 87000.0A
I[TSM] [A](@10ms, Tvj max): 87000.0
R[thJC] [K/kW](@180° el sin) max: 5.0
T[vj] [°C] max: 125.0
V[DRM] / V[RRM] [V]: 3600.0
V[DRM]/ V[RRM (V)]: 3600.0V
V[T]/I[T] [V/kA](@Tvj max): 1,40/4.0
t[q] [µs]: 300.0
∫I2dt [A²s · 103](@10ms, Tvj max): 37850.0
V[DRM]/ V[RRM (V)]: 5200.0V
I[TSM]: 79000.0A
I[TAVM]: 2980 (180 ° el sin)
Configuration: Electrical Triggered Phase Control Thyristor
Housing: Disc dia 150mm height 35mm / Ceramic
V[DRM] / V[RRM] [V]: 5200.0
I[TAVM]/T[C] [A/°C](@180° el sin): 2980/85
I[TSM] [A](@10ms, Tvj max): 79000.0
∫I2dt [A²s · 103](@10ms, Tvj max): 31000.0
V[T]/I[T] [V/kA](@Tvj max): 1.70/4.0
V[T0] [V](@T[vj max]) max: 0.77
r[T] [mΩ](@T[vj max]) max: 0.235
t[q] [µs]: 600.0
R[thJC] [K/kW](@180° el sin) max: 5.4
T[vj] [°C] max: 125.0
Clamping force [kn] max: 91.0
V[DRM]/ V[RRM (V)]: 5200.0V
I[TSM]: 79000.0A
I[TAVM]: 3200 (180 ° el sin)
Configuration: Electrical Triggered Phase Control Thyristor
Housing: Disc dia 150mm height 26mm / Ceramic
V[DRM] / V[RRM] [V]: 5200.0
I[TAVM]/T[C] [A/°C](@180° el sin): 3200/85
I[TSM] [A](@10ms, Tvj max): 79000.0
∫I2dt [A²s · 103](@10ms, Tvj max): 31000.0
V[T]/I[T] [V/kA](@Tvj max): 1.70/4.0
V[T0] [V](@T[vj max]) max: 0.77
r[T] [mΩ](@T[vj max]) max: 0.235
t[q] [µs]: 600.0
R[thJC] [K/kW](@180° el sin) max: 4.8
T[vj] [°C] max: 125.0
Clamping force [kn] max: 91.0
V[DRM]/ V[RRM (V)]: 8000.0V
I[TSM]: 65000.0A
I[TAVM]: 2100 (180 ° el sin)
Configuration: Electrical Triggered Phase Control Thyristor
Housing: Disc dia 150mm height 35mm / Ceramic
V[DRM] / V[RRM] [V]: 8000.0
I[TAVM]/T[C] [A/°C](@180° el sin): 2100/85
I[TSM] [A](@10ms, Tvj max): 65000.0
∫I2dt [A²s · 103](@10ms, Tvj max): 21100.0
V[T]/I[T] [V/kA](@Tvj max): 3.0/4.0
V[T0] [V](@T[vj max]) max: 1.24
r[T] [mΩ](@T[vj max]) max: 0.44
t[q] [µs]: 550.0
R[thJC] [K/kW](@180° el sin) max: 5.4
T[vj] [°C] max: 125.0
Clamping force [kn] max: 91.0
V[DRM]/ V[RRM (V)]: 8000.0V
I[TSM]: 65000.0A
I[TAVM]: 2260 (180 ° el sin)
Configuration: Electrical Triggered Phase Control Thyristor
Housing: Disc dia 150mm height 26mm / Ceramic
V[DRM] / V[RRM] [V]: 8000.0
I[TAVM]/T[C] [A/°C](@180° el sin): 2260/85
I[TSM] [A](@10ms, Tvj max): 65000.0
∫I2dt [A²s · 103](@10ms, Tvj max): 21100.0
V[T]/I[T] [V/kA](@Tvj max): 3.0/4.0
V[T0] [V](@T[vj max]) max: 1.24
r[T] [mΩ](@T[vj max]) max: 0.44
t[q] [µs]: 550.0
R[thJC] [K/kW](@180° el sin) max: 4.8
T[vj] [°C] max: 125.0
Clamping force [kn] max: 91.0
Clamping force [kn] max: 95.0
Configuration: Electrical Triggered Phase Control Thyristor
I[TAVM]: 4040 (180 ° el sin)
I[TAVM]/T[C] [A/°C](@180° el sin): 4040/85
I[TSM]: 57000.0A
I[TSM] [A](@10ms, Tvj max): 57000.0
R[thJC] [K/kW](@180° el sin) max: 7.74
T[vj] [°C] max: 125.0
V[DRM] / V[RRM] [V]: 1800.0
V[DRM]/ V[RRM (V)]: 1800.0V
V[T0] [V](@T[vj max]) max: 8.0
V[T]/I[T] [V/kA](@Tvj max): 1.28/6.0
r[T] [mΩ](@T[vj max]) max: 0.08
t[q] [µs]: 250.0
∫I2dt [A²s · 103](@10ms, Tvj max): 16245.0
Housing: Disc dia 120mm height 26mm / Ceramic