T3710N06TOFVT


数据:
分类: 半导体分立器件和附件 / 闸流晶体管

描述: 600 V phase control thyristor disc

V[DRM]/ V[RRM (V)]: 600.0V I[TSM]: 60000.0A I[TAVM]: 3710 (180 ° el sin) Configuration: Electrical Triggered Phase Control Thyristor Housing: Disc dia 100mm height 26mm / Ceramic V[DRM] / V[RRM] [V]: 600.0 I[TAVM]/T[C] [A/°C](@180° el sin): 3710/85 I[TSM] [A](@10ms, Tvj max): 60000.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 18000.0 V[T]/I[T] [V/kA](@Tvj max): 1.50/15.0 V[T0] [V](@T[vj max]) max: 0.75 r[T] [mΩ](@T[vj max]) max: 0.048 t[q] [µs]: 200.0 R[thJC] [K/kW](@180° el sin) max: 12.5 T[vj] [°C] max: 140.0 Clamping force [kn] max: 65.0

T3160N18TOFVT


数据:
分类: 半导体分立器件和附件 / 闸流晶体管

描述: 1800 V phase control thyristor disc

V[DRM]/ V[RRM (V)]: 1800.0V I[TSM]: 57000.0A I[TAVM]: 3160 (180 ° el sin) Configuration: Electrical Triggered Phase Control Thyristor Housing: Disc dia 111mm height 26mm / Ceramic V[DRM] / V[RRM] [V]: 1800.0 I[TAVM]/T[C] [A/°C](@180° el sin): 3160/85 I[TSM] [A](@10ms, Tvj max): 57000.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 16245.0 V[T]/I[T] [V/kA](@Tvj max): 1.37/6.0 V[T0] [V](@T[vj max]): 0.85 r[T] [mΩ](@T[vj max]): 0.082 t[q] [µs]: 250.0 R[thJC] [K/kW](@180° el sin) max: 8.5 T[vj] [°C] max: 125.0 Clamping force [kn] max: 95.0

T3160N16TOFVT


数据:
分类: 半导体分立器件和附件 / 闸流晶体管

描述: 1600 V phase control thyristor disc

V[DRM]/ V[RRM (V)]: 1600.0V I[TSM]: 57000.0A I[TAVM]: 3160 (180 ° el sin) Configuration: Electrical Triggered Phase Control Thyristor Housing: Disc dia 111mm height 26mm / Ceramic V[DRM] / V[RRM] [V]: 1600.0 I[TAVM]/T[C] [A/°C](@180° el sin): 3160/85 I[TSM] [A](@10ms, Tvj max): 57000.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 16245.0 V[T]/I[T] [V/kA](@Tvj max): 1.37/6.0 V[T0] [V](@T[vj max]) max: 0.85 r[T] [mΩ](@T[vj max]) max: 0.082 t[q] [µs]: 250.0 R[thJC] [K/kW](@180° el sin) max: 8.5 T[vj] [°C] max: 125.0 Clamping force [kn] max: 95.0

T3710N04TOFVT


数据:
分类: 半导体分立器件和附件 / 闸流晶体管

描述: 600 V phase control thyristor disc

V[DRM]/ V[RRM (V)]: 400.0V I[TSM]: 60000.0A I[TAVM]: 3710 (180 ° el sin) Configuration: Electrical Triggered Phase Control Thyristor Housing: Disc dia 100mm height 26mm / Ceramic V[DRM] / V[RRM] [V]: 400.0 I[TAVM]/T[C] [A/°C](@180° el sin): 3710/85 I[TSM] [A](@10ms, Tvj max): 60000.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 18000.0 V[T]/I[T] [V/kA](@Tvj max): 1.50/15.0 V[T0] [V](@T[vj max]) max: 0.75 r[T] [mΩ](@T[vj max]) max: 0.048 t[q] [µs]: 200.0 R[thJC] [K/kW](@180° el sin) max: 12.5 T[vj] [°C] max: 140.0 Clamping force [kn] max: 65.0

T1503NH80TOH


数据:
分类: 半导体分立器件和附件 / 闸流晶体管

描述: 8000 V Light Triggered Phase Control Thyristor Diode Disc

V[DRM]/ V[RRM (V)]: 8000.0V I[TSM]: 55000.0A Configuration: Light Triggered Phase Control Thyristor Housing: Disc dia 150mm height 40mm / Ceramic V[DRM] / V[RRM] [V]: 8000.0 I[TAVM]/T[C] [A/°C](@180° el sin): 1770/85 I[TSM] [A](@10ms, Tvj max): 55000.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 15125.0 V[T]/I[T] [V/kA](@Tvj max): 3.00/4.0 V[T0] [V](@T[vj max]) max: 1.24 r[T] [mΩ](@T[vj max]) max: 0.44 t[q] [µs]: 550.0 R[thJC] [K/kW](@180° el sin) max: 6.3 T[vj] [°C] max: 120.0 Clamping force [kn] max: 91.0
V[DRM]/ V[RRM (V)]: 1800.0V I[TSM]: 50000.0A I[TAVM]: 2810 (180 ° el sin) Configuration: Electrical Triggered Phase Control Thyristor Housing: Disc dia 111mm height 26mm / Ceramic V[DRM] / V[RRM] [V]: 1800.0 I[TAVM]/T[C] [A/°C](@180° el sin): 2810/85 I[TSM] [A](@10ms, Tvj max): 50000.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 12500.0 V[T]/I[T] [V/kA](@Tvj max): 2.35/11.0 V[T0] [V](@T[vj max]) max: 0.9 r[T] [mΩ](@T[vj max]) max: 0.112 t[q] [µs]: 300.0 R[thJC] [K/kW](@180° el sin) max: 8.5 T[vj] [°C] max: 125.0 Clamping force [kn] max: 95.0
V[DRM]/ V[RRM (V)]: 1600.0V I[TSM]: 50000.0A I[TAVM]: 2810 (180 ° el sin) Configuration: Electrical Triggered Phase Control Thyristor Housing: Disc dia 111mm height 26mm / Ceramic V[DRM] / V[RRM] [V]: 1600.0 I[TAVM]/T[C] [A/°C](@180° el sin): 2810/85 I[TSM] [A](@10ms, Tvj max): 50000.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 12500.0 V[T]/I[T] [V/kA](@Tvj max): 2.35/11.0 V[T0] [V](@T[vj max]) max: 0.9 r[T] [mΩ](@T[vj max]) max: 0.112 t[q] [µs]: 300.0 R[thJC] [K/kW](@180° el sin) max: 8.5 T[vj] [°C] max: 125.0 Clamping force [kn] max: 95.0
V[DRM]/ V[RRM (V)]: 7000.0V I[TSM]: 48000.0A I[TAVM]: 1830 (180 ° el sin) Configuration: Electrical Triggered Phase Control Thyristor Housing: Disc dia 120mm height 26mm / Ceramic V[DRM] / V[RRM] [V]: 7000.0 I[TAVM]/T[C] [A/°C](@180° el sin): 1830/85 I[TSM] [A](@10ms, Tvj max): 48000.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 11500.0 V[T]/I[T] [V/kA](@Tvj max): 2.65/3.0 V[T0] [V](@T[vj max]) max: 1.22 r[T] [mΩ](@T[vj max]) max: 0.49 t[q] [µs]: 600.0 R[thJC] [K/kW](@180° el sin) max: 6.5 T[vj] [°C] max: 125.0 Clamping force [kn] max: 65.0

T2200N16H100


数据:
分类: 半导体分立器件和附件 / 闸流晶体管

描述: 1600 V phase control thyristor disc

Clamping force [kn] max: 45.0 Housing: Disc dia 100mm height 26mm / Ceramic I[TAVM]/T[C] [A/°C](@180° el sin): 2170/85 I[TAVM]: 2170 (180 ° el sin) I[TSM] [A](@10ms, Tvj max): 44000.0 R[thJC] [K/kW](@180° el sin) max: 12.6 T[vj] [°C] max: 125.0 V[DRM] / V[RRM] [V]: 1600.0 V[DRM]/ V[RRM (V)]: 1600.0V ∫I2dt [A²s · 103](@10ms, Tvj max): 9680.0
V[DRM]/ V[RRM (V)]: 2800.0V I[TSM]: 43500.0A I[TAVM]: 2480 (180 ° el sin) Configuration: Electrical Triggered Phase Control Thyristor Housing: Disc dia 111mm height 26mm / Ceramic V[DRM] / V[RRM] [V]: 2800.0 I[TAVM]/T[C] [A/°C](@180° el sin): 2480/85 I[TSM] [A](@10ms, Tvj max): 43500.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 9460.0 V[T]/I[T] [V/kA](@Tvj max): 1.43/3.0 V[T0] [V](@T[vj max]) max: 0.95 r[T] [mΩ](@T[vj max]) max: 0.154 t[q] [µs]: 400.0 R[thJC] [K/kW](@180° el sin) max: 8.5 T[vj] [°C] max: 125.0 Clamping force [kn] max: 95.0