V[DRM]/ V[RRM (V)]: 5200.0V I[TSM]: 100000.0A I[TAVM]: 3880 (180 ° el sin) Configuration: Electrical Triggered Phase Control Thyristor Housing: Disc dia 172mm height 35mm / Ceramic V[DRM] / V[RRM] [V]: 5200.0 I[TAVM]/T[C] [A/°C](@180° el sin): 3880/85 I[TSM] [A](@10ms, Tvj max): 100000.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 50000.0 V[T]/I[T] [V/kA](@Tvj max): 1.80/6.0 V[T0] [V](@T[vj max]) max: 0.93 r[T] [mΩ](@T[vj max]) max: 0.145 t[q] [µs]: 550.0 R[thJC] [K/kW](@180° el sin) max: 4.5 T[vj] [°C] max: 125.0 Clamping force [kn] max: 130.0
V[DRM]/ V[RRM (V)]: 2200.0V I[TSM]: 91000.0A I[TAVM]: 4340 (180 ° el sin) Configuration: Electrical Triggered Phase Control Thyristor Housing: Disc dia 150mm height 26mm / Ceramic V[DRM] / V[RRM] [V]: 2200.0 I[TAVM]/T[C] [A/°C](@180° el sin): 4340/85 I[TSM] [A](@10ms, Tvj max): 91000.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 41400.0 V[T]/I[T] [V/kA](@Tvj max): 1.20/4.0 V[T0] [V](@T[vj max]) max: 0.77 r[T] [mΩ](@T[vj max]) max: 0.107 t[q] [µs]: 250.0 R[thJC] [K/kW](@180° el sin) max: 4.8 T[vj] [°C] max: 125.0 Clamping force [kn] max: 91.0

T2563N80TOHPR


数据:
分类: 半导体分立器件和附件 / 闸流晶体管

描述: 8000 V Light Triggered Phase Control Thyristor Diode Disc

V[DRM]/ V[RRM (V)]: 8000.0V I[TSM]: 90000.0A I[TAVM]: 2300 (180 ° el sin) Configuration: Light Triggered Phase Control Thyristor Housing: Disc dia 172mm height 40mm / Ceramic V[DRM] / V[RRM] [V]: 8000.0 I[TAVM]/T[C] [A/°C](@180° el sin): 2300/85 I[TSM] [A](@10ms, Tvj max): 90000.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 40500.0 V[T]/I[T] [V/kA](@Tvj max): 2.95/5.0 V[T0] [V](@T[vj max]) max: 1.2 r[T] [mΩ](@T[vj max]) max: 0.35 t[q] [µs]: 550.0 R[thJC] [K/kW](@180° el sin) max: 4.8 T[vj] [°C] max: 120.0 Clamping force [kn] max: 130.0
V[DRM]/ V[RRM (V)]: 8000.0V I[TSM]: 90000.0A I[TAVM]: 2620 (180 ° el sin) Configuration: Electrical Triggered Phase Control Thyristor Housing: Disc dia 172mm height 35mm / Ceramic V[DRM] / V[RRM] [V]: 8000.0 I[TAVM]/T[C] [A/°C](@180° el sin): 2620/85 I[TSM] [A](@10ms, Tvj max): 90000.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 40500.0 V[T]/I[T] [V/kA](@Tvj max): 2.95/5.0 V[T0] [V](@T[vj max]) max: 1.27 r[T] [mΩ](@T[vj max]) max: 0.336 t[q] [µs]: 550.0 R[thJC] [K/kW](@180° el sin) max: 4.5 T[vj] [°C] max: 125.0 Clamping force [kn] max: 130.0

T3401N36TOFVT


数据:
分类: 半导体分立器件和附件 / 闸流晶体管

描述: 3600 V electrical triggered phase control thyristor disc

Clamping force [kn] max: 91.0 Configuration: Electrical Triggered Phase Control Thyristor Housing: Disc dia 150mm height 26mm / Ceramic I[TAVM]/T[C] [A/°C](@180° el sin): 3560/85 I[TAVM]: 3560 (180 ° el sin) I[TSM]: 87000.0A I[TSM] [A](@10ms, Tvj max): 87000.0 R[thJC] [K/kW](@180° el sin) max: 5.0 T[vj] [°C] max: 125.0 V[DRM] / V[RRM] [V]: 3600.0 V[DRM]/ V[RRM (V)]: 3600.0V V[T]/I[T] [V/kA](@Tvj max): 1,40/4.0 t[q] [µs]: 300.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 37850.0
V[DRM]/ V[RRM (V)]: 5200.0V I[TSM]: 79000.0A I[TAVM]: 2980 (180 ° el sin) Configuration: Electrical Triggered Phase Control Thyristor Housing: Disc dia 150mm height 35mm / Ceramic V[DRM] / V[RRM] [V]: 5200.0 I[TAVM]/T[C] [A/°C](@180° el sin): 2980/85 I[TSM] [A](@10ms, Tvj max): 79000.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 31000.0 V[T]/I[T] [V/kA](@Tvj max): 1.70/4.0 V[T0] [V](@T[vj max]) max: 0.77 r[T] [mΩ](@T[vj max]) max: 0.235 t[q] [µs]: 600.0 R[thJC] [K/kW](@180° el sin) max: 5.4 T[vj] [°C] max: 125.0 Clamping force [kn] max: 91.0
V[DRM]/ V[RRM (V)]: 5200.0V I[TSM]: 79000.0A I[TAVM]: 3200 (180 ° el sin) Configuration: Electrical Triggered Phase Control Thyristor Housing: Disc dia 150mm height 26mm / Ceramic V[DRM] / V[RRM] [V]: 5200.0 I[TAVM]/T[C] [A/°C](@180° el sin): 3200/85 I[TSM] [A](@10ms, Tvj max): 79000.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 31000.0 V[T]/I[T] [V/kA](@Tvj max): 1.70/4.0 V[T0] [V](@T[vj max]) max: 0.77 r[T] [mΩ](@T[vj max]) max: 0.235 t[q] [µs]: 600.0 R[thJC] [K/kW](@180° el sin) max: 4.8 T[vj] [°C] max: 125.0 Clamping force [kn] max: 91.0
V[DRM]/ V[RRM (V)]: 8000.0V I[TSM]: 65000.0A I[TAVM]: 2100 (180 ° el sin) Configuration: Electrical Triggered Phase Control Thyristor Housing: Disc dia 150mm height 35mm / Ceramic V[DRM] / V[RRM] [V]: 8000.0 I[TAVM]/T[C] [A/°C](@180° el sin): 2100/85 I[TSM] [A](@10ms, Tvj max): 65000.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 21100.0 V[T]/I[T] [V/kA](@Tvj max): 3.0/4.0 V[T0] [V](@T[vj max]) max: 1.24 r[T] [mΩ](@T[vj max]) max: 0.44 t[q] [µs]: 550.0 R[thJC] [K/kW](@180° el sin) max: 5.4 T[vj] [°C] max: 125.0 Clamping force [kn] max: 91.0
V[DRM]/ V[RRM (V)]: 8000.0V I[TSM]: 65000.0A I[TAVM]: 2260 (180 ° el sin) Configuration: Electrical Triggered Phase Control Thyristor Housing: Disc dia 150mm height 26mm / Ceramic V[DRM] / V[RRM] [V]: 8000.0 I[TAVM]/T[C] [A/°C](@180° el sin): 2260/85 I[TSM] [A](@10ms, Tvj max): 65000.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 21100.0 V[T]/I[T] [V/kA](@Tvj max): 3.0/4.0 V[T0] [V](@T[vj max]) max: 1.24 r[T] [mΩ](@T[vj max]) max: 0.44 t[q] [µs]: 550.0 R[thJC] [K/kW](@180° el sin) max: 4.8 T[vj] [°C] max: 125.0 Clamping force [kn] max: 91.0

T3841N18TOFVT


数据:
分类: 半导体分立器件和附件 / 闸流晶体管

描述: 1800 V phase control thyristor disc

Clamping force [kn] max: 95.0 Configuration: Electrical Triggered Phase Control Thyristor I[TAVM]: 4040 (180 ° el sin) I[TAVM]/T[C] [A/°C](@180° el sin): 4040/85 I[TSM]: 57000.0A I[TSM] [A](@10ms, Tvj max): 57000.0 R[thJC] [K/kW](@180° el sin) max: 7.74 T[vj] [°C] max: 125.0 V[DRM] / V[RRM] [V]: 1800.0 V[DRM]/ V[RRM (V)]: 1800.0V V[T0] [V](@T[vj max]) max: 8.0 V[T]/I[T] [V/kA](@Tvj max): 1.28/6.0 r[T] [mΩ](@T[vj max]) max: 0.08 t[q] [µs]: 250.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 16245.0 Housing: Disc dia 120mm height 26mm / Ceramic