INFINEON

Infineon 英飞凌专注于迎接现代社会的三大科技挑战：高能效、移动性和安全性，为汽车和工业功率器件、芯片卡和安全应用提供半导体和系统解决方案。英飞凌的产品素以高可靠性、卓越质量和创新性著称，并在模拟和混合信号、射频、功率以及嵌入式控制装置领域掌握尖端技术。

ISP12DP06NM

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: P-channel MOSFET in normal and logic level, reducing design complexity in medium and low power applications

ID (@25°C): NoneA IDpuls: NoneA Operating Temperature: None°C Ptot: NoneW Package: SOT-223 Polarity: P QG(typ @10V): -20.2nC RDS (on)(@10V): NonemΩ VDS: NoneV VGS(th): NoneV Special Features: Small Signal Budgetary Price €/1k: 0.29

BSP316P

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: P-channel enhancement mode Field-Effect Transistor (FET), -100 V, SOT-223

IDpuls: NoneA VGS(th): NoneV Rth: 115.0K/W Ptot: NoneW VDS: NoneV Package: SOT-223 Polarity: P Mounting: SMD Mode: Enhancement Ciss: 117.0pF Coss: 27.7pF Special Features: Small Power QG(typ @10V): -5.1nC RDS (on)(@10V): NonemΩ ID (@25°C): NoneA Operating Temperature: None°C Budgetary Price €/1k: 0.23

BSS806NE

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: N-Channel Small Signal MOSFET 20 V in SOT-23 package

VDS: NoneV Ptot: NoneW IDpuls: NoneA VGS(th): NoneV Rth: 250.0K/W RthJA: NoneK/W Pin Count: 3.0Pins Package: SOT-23 Polarity: N Mounting: SMD Mode: Enhancement Ciss: 370.0pF Coss: 118.0pF RDS (on): NonemΩ RDS (on)(@1.8V): NonemΩ RDS (on)(@2.5V): NonemΩ ID (@25°C): NoneA QG(typ @4.5V): NonenC Operating Temperature: None°C Special Features: ESD protected 更多

VGS(th): 0.55V Budgetary Price €/1k: 0.05

IRLML2030

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: 30V Single N-Channel StrongIRFET™ Power MOSFET in a SOT-23 package

Moisture Sensitivity Level: 1 Package: SOT-23 Polarity: N Qgd: 0.34nC Tj: None°C VGS: NoneV Mounting: SMD Ptot(@ TA=25°C): NoneW RthJA: NoneK/W VDS: NoneV RDS (on)(@10V): NonemΩ RDS (on)(@4.5V): NonemΩ VGS(th): 1.7V ID (@25°C): NoneA QG(typ @4.5V): 1.0nC Special Features: Small Power Operating Temperature: None°C Budgetary Price €/1k: 0.06

BSS138I

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: N-channel enhancement mode small signal transistor for industrial and consumer applications in SOT-23-3 package

ID (@25°C): NoneA IDpuls: NoneA Mounting: SMT Operating Temperature: None°C Ptot: NoneW Package: SOT-23 Pin Count: 3.0Pins Polarity: N QG(typ @10V): 1.0nC RDS (on)(@10V): NonemΩ RDS (on)(@4.5V): NonemΩ Special Features: Small Signal VDS: NoneV VGS(th): 1.0V Budgetary Price €/1k: 0.03

BSP315P

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: P-channel enhancement mode Field-Effect Transistor (FET), -100 V, SOT-223

IDpuls: NoneA VGS(th): NoneV Rth: 115.0K/W Ptot: NoneW VDS: NoneV Package: SOT-223 Polarity: P Mounting: SMD Mode: Enhancement Ciss: 130.0pF Coss: 40.0pF Special Features: Small Power QG(typ @10V): 5.2nC RDS (on)(@10V): NonemΩ ID (@25°C): NoneA Operating Temperature: None°C Budgetary Price €/1k: 0.23

BSP322P

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: P-channel enhancement mode Field-Effect Transistor (FET), -100 V, SOT-223

IDpuls: NoneA VGS(th): NoneV Rth: 115.0K/W Pin Count: 3.0Pins Ptot: NoneW VDS: NoneV Package: SOT-223 Polarity: P Mounting: SMD Mode: Enhancement Ciss: 280.0pF Coss: 70.0pF Special Features: Small Power QG(typ @10V): 12.4nC RDS (on)(@10V): NonemΩ ID (@25°C): NoneA Operating Temperature: None°C Budgetary Price €/1k: 0.23

BSS314PE

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: P-channel enhancement mode Field-Effect Transistor (FET), -30 V, SOT-23

IDpuls: NoneA VGS(th): NoneV Rth: 250.0K/W Ptot: NoneW VDS: NoneV Package: SOT-23 Ciss: 221.0pF Coss: 126.0pF QG(typ @10V): -2.9nC RDS (on)(@10V): NonemΩ Polarity: P ID (@25°C): NoneA Operating Temperature: None°C Operating Temperature: None°C Special Features: ESD protected VGS(th): -1.5V Budgetary Price €/1k: 0.05

BSS209PW

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: P-channel enhancement mode small signal Field-Effect Transistor (FET), -100 V, SOT-223

IDpuls: NoneA VGS(th): NoneV Rth: 420.0K/W Ptot: NoneW VDS: NoneV Package: SOT-323 Ciss: 87.0pF Coss: 35.0pF Special Features: Small Signal RDS (on)(@4.5V): NonemΩ Polarity: P ID (@25°C): NoneA QG(typ @4.5V): NonenC Operating Temperature: None°C Operating Temperature: None°C Budgetary Price €/1k: 0.04

IRFTS9342

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: -30V Single P-Channel StrongIRFET™ Power MOSFET in a TSOP-6 (Micro 6) package

RthJA: NoneK/W VDS: NoneV Moisture Sensitivity Level: 1 Mounting: SMD Polarity: P Ptot(@ TA=25°C): NoneW Qgd: 3.1nC Tj: None°C VGS: NoneV ID (@25°C): NoneA Package: TSOP-6 VGS(th): NoneV RDS (on)(@10V): NonemΩ RDS (on)(@4.5V): NonemΩ QG(typ @4.5V): 12.0nC Special Features: Small Power Budgetary Price €/1k: 0.11