INFINEON

Infineon 英飞凌专注于迎接现代社会的三大科技挑战：高能效、移动性和安全性，为汽车和工业功率器件、芯片卡和安全应用提供半导体和系统解决方案。英飞凌的产品素以高可靠性、卓越质量和创新性著称，并在模拟和混合信号、射频、功率以及嵌入式控制装置领域掌握尖端技术。

BSS159N

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

IDpuls: NoneA VGS(th): -2.8V RthJC: NoneK/W Operating Temperature: None°C Pin Count: 3.0Pins Ptot: NoneW VDS: NoneV QG(typ @4.5V): 2.2nC ID (@25°C): NoneA Package: SOT-23 Mounting: SMD Mode: Depletion Ciss: 29.0pF Coss: 7.4pF RDS (on)(@10V): NonemΩ Special Features: Depletion mode Polarity: N RDS (on)(@0V): 8000.0mΩ Budgetary Price €/1k: 0.09

IRLML6244

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: 20V Single N-Channel StrongIRFET™ Power MOSFET in a SOT-23 package

Qgd: 4.4nC VGS: NoneV Moisture Sensitivity Level: 1 Package: SOT-23 Polarity: N RthJA: NoneK/W Tj: None°C VDS: NoneV Mounting: SMD Ptot(@ TA=25°C): NoneW RDS (on)(@4.5V): NonemΩ VGS(th): 0.9V ID (@25°C): NoneA QG(typ @4.5V): 8.9nC Special Features: Small Power Operating Temperature: None°C Budgetary Price €/1k: 0.06

BSS84PW

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: P-channel enhancement mode Field-Effect Transistor (FET), -60 V, SOT-323

IDpuls: NoneA VGS(th): NoneV Rth: 420.0K/W Ptot: NoneW VDS: NoneV Package: SOT-323 Ciss: 15.3pF Coss: 5.8pF Special Features: Small Signal QG(typ @10V): 1.0nC RDS (on)(@10V): NonemΩ Polarity: P ID (@25°C): NoneA Operating Temperature: None°C Operating Temperature: None°C Budgetary Price €/1k: 0.03

BSL207SP

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: P-channel enhancement mode Field-Effect Transistor (FET), -20 V, TSOP-6

VDS: NoneV Ptot: NoneW IDpuls: NoneA VGS(th): NoneV RthJA: NoneK/W Pin Count: 6.0Pins Package: TSOP-6 Polarity: P Mounting: SMD Mode: Enhancement Ciss: 1007.0pF Coss: 410.0pF RDS (on)(@2.5V): NonemΩ RDS (on)(@4.5V): NonemΩ RDS (on)(@4.5V LL): NonemΩ Special Features: Small Power ID (@25°C): NoneA QG(typ @4.5V): NonenC Operating Temperature: None°C Budgetary Price €/1k: 0.19

IRLL014N

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: 55V Single N-Channel IR MOSFET in a SOT-223 package

Moisture Sensitivity Level: 1 Package: SOT-223 Polarity: N Ptot(@ TA=25°C): NoneW Qgd: 3.0nC Tj: None°C VGS: NoneV Mounting: SMD RthJA: NoneK/W VDS: NoneV RDS (on)(@10V): NonemΩ RDS (on)(@4.5V): NonemΩ VGS(th): 1.5V QG(typ @10V): 9.5nC ID (@25°C): NoneA Special Features: Small Power Operating Temperature: None°C Budgetary Price €/1k: 0.17

IRLML6402

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: -20V Single P-Channel Power MOSFET in a Micro 3 package

Mounting: SMD Package: SOT-23 Ptot(@ TA=25°C): NoneW Qgd: 2.8nC Tj: None°C VGS: NoneV Moisture Sensitivity Level: 1 Polarity: P RthJA: NoneK/W VDS: NoneV RDS (on)(@4.5V): NonemΩ VGS(th): -0.55V ID (@25°C): NoneA QG(typ @4.5V): 8.0nC Special Features: Small Power Budgetary Price €/1k: 0.06

BSS138W

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: N-Channel Small Signal MOSFET 60 V in SOT323 package

IDpuls: NoneA VGS(th): NoneV RthJA: NoneK/W Ptot: NoneW VDS: NoneV Package: SOT-323 Ciss: 32.0pF Coss: 7.2pF RDS (on): NonemΩ RDS (on)(@4.5V): NonemΩ RDS (on)(@4.5V LL): NonemΩ Special Features: Small Signal Polarity: N ID (@25°C): NoneA Operating Temperature: None°C Operating Temperature: None°C QG(typ @4.5V): 1.0nC Budgetary Price €/1k: 0.04

BSL806N

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: Dual N-Channel small-signal MOSFET 20 V for automotive applications in space-saving TSOP-6 package

VDS: NoneV Ptot: NoneW IDpuls: NoneA VGS(th): 0.55V RthJA: NoneK/W Pin Count: 6.0Pins Package: TSOP-6 dual Mounting: SMD Mode: Enhancement Ciss: 370.0pF Coss: 118.0pF RDS (on): NonemΩ RDS (on)(@1.8V): NonemΩ RDS (on)(@2.5V): NonemΩ ID (@25°C): NoneA QG(typ @4.5V): NonenC Operating Temperature: None°C Budgetary Price €/1k: 0.12 Polarity: N+N Special Features: Dual Operating Temperature: None°C

IRLML2502

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: 20V Single N-Channel Power MOSFET in a Micro 3 package

Moisture Sensitivity Level: 1 Mounting: SMD Polarity: N Ptot(@ TA=25°C): NoneW Qgd: 1.7nC RthJA: NoneK/W Tj: None°C VDS: NoneV VGS: NoneV Package: SOT-23 RDS (on)(@4.5V): NonemΩ VGS(th): 0.9V ID (@25°C): NoneA QG(typ @4.5V): 8.0nC Special Features: Small Power Operating Temperature: None°C Budgetary Price €/1k: 0.09

IRLML5203

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: -30V Single P-Channel Power MOSFET in a Micro 3 package

Moisture Sensitivity Level: 1 Mounting: SMD Polarity: P Ptot(@ TA=25°C): NoneW Qgd: 1.6nC RthJA: NoneK/W Tj: None°C VDS: NoneV VGS: NoneV Package: SOT-23 RDS (on)(@10V): NonemΩ RDS (on)(@4.5V): NonemΩ VGS(th): -1.75V QG(typ @10V): 9.5nC ID (@25°C): NoneA Special Features: Small Power Budgetary Price €/1k: 0.07