INFINEON

Infineon 英飞凌专注于迎接现代社会的三大科技挑战：高能效、移动性和安全性，为汽车和工业功率器件、芯片卡和安全应用提供半导体和系统解决方案。英飞凌的产品素以高可靠性、卓越质量和创新性著称，并在模拟和混合信号、射频、功率以及嵌入式控制装置领域掌握尖端技术。

IRF5801

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: 200V Single N-Channel MOSFET in a TSOP-6 (Micro 6) package

Moisture Sensitivity Level: 1 Polarity: N Tj: None°C Mounting: SMD Ptot(@ TA=25°C): NoneW Ptot: NoneW Qgd: 2.2nC RthJA: NoneK/W VDS: NoneV VGS: NoneV Package: TSOP-6 RDS (on)(@10V): NonemΩ VGS(th): 4.25V QG(typ @10V): 3.9nC ID (@25°C): NoneA Special Features: Small Power Operating Temperature: None°C Budgetary Price €/1k: 0.13

IRLL024N

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: 55V Single N-Channel IR MOSFET in a SOT-223 package

Moisture Sensitivity Level: 1 Package: SOT-223 Polarity: N Ptot(@ TA=25°C): NoneW Qgd: 5.5nC Tj: None°C VGS: NoneV Mounting: SMD RthJA: NoneK/W VDS: NoneV RDS (on)(@10V): NonemΩ RDS (on)(@4.5V): NonemΩ VGS(th): 1.5V ID (@25°C): NoneA QG(typ @4.5V): 10.4nC Special Features: Small Power Operating Temperature: None°C Budgetary Price €/1k: 0.21

IRF5803

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: -40V Single P-Channel Power MOSFET in a TSOP-6 (Micro 6) package

Mounting: SMD Ptot(@ TA=25°C): NoneW RthJA: NoneK/W Tj: None°C VDS: NoneV VGS: NoneV Moisture Sensitivity Level: 2 Polarity: P Qgd: 3.5nC Package: TSOP-6 RDS (on)(@10V): NonemΩ RDS (on)(@4.5V): NonemΩ VGS(th): -2.0V QG(typ @10V): 25.0nC ID (@25°C): NoneA Special Features: Small Power Budgetary Price €/1k: 0.15

IRFL024Z

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: 55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package

Qgd: 3.9nC VGS: NoneV Package: SOT-223 RthJA: NoneK/W VDS: NoneV Moisture Sensitivity Level: 1 Mounting: SMD Polarity: N Ptot(@ TA=25°C): NoneW Tj: None°C RDS (on)(@10V): NonemΩ VGS(th): 3.0V QG(typ @10V): 9.1nC ID (@25°C): NoneA Special Features: Small Power Operating Temperature: None°C Budgetary Price €/1k: 0.2

IRLMS2002

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: 20V Single N-Channel Power MOSFET in a TSOP-6 (Micro 6) package

Moisture Sensitivity Level: 1 Polarity: N Ptot: NoneW Qgd: 3.5nC Tj: None°C VGS: NoneV Mounting: SMD Ptot(@ TA=25°C): NoneW RthJA: NoneK/W VDS: NoneV Package: TSOP-6 RDS (on)(@4.5V): NonemΩ VGS(th): 0.9V ID (@25°C): NoneA QG(typ @4.5V): 15.0nC Special Features: Small Power Operating Temperature: None°C Budgetary Price €/1k: 0.16

IRLML0040

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: 40V Single N-Channel StrongIRFET™ Power MOSFET in a SOT-23 package

Moisture Sensitivity Level: 1 Mounting: SMD Polarity: N Ptot(@ TA=25°C): NoneW Qgd: 1.4nC RthJA: NoneK/W Tj: None°C VDS: NoneV Package: SOT-23 VGS: NoneV RDS (on)(@10V): NonemΩ RDS (on)(@4.5V): NonemΩ VGS(th): 1.8V ID (@25°C): NoneA QG(typ @4.5V): 2.6nC Special Features: Small Power Operating Temperature: None°C Budgetary Price €/1k: 0.09

BSD214SN

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: N-Channel Small Signal MOSFET 20 V in SOT363 package

IDpuls: NoneA VGS(th): NoneV RthJA: NoneK/W Ptot: NoneW VDS: NoneV QG: 0.8nC Package: SOT-363 Ciss: 107.0pF Coss: 46.0pF RDS (on): NonemΩ RDS (on)(@2.5V): NonemΩ RDS (on)(@4.5V): NonemΩ RDS (on)(@4.5V LL): NonemΩ Special Features: Small Signal Polarity: N ID (@25°C): NoneA Operating Temperature: None°C Operating Temperature: None°C Budgetary Price €/1k: 0.05

IRLML2803

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: 30V Single N-Channel Power MOSFET in a Micro 3 package

Moisture Sensitivity Level: 1 Package: SOT-23 Polarity: N Qgd: 1.1nC RthJA: NoneK/W Tj: None°C VGS: NoneV Mounting: SMD Ptot(@ TA=25°C): NoneW VDS: NoneV RDS (on)(@10V): NonemΩ RDS (on)(@4.5V): NonemΩ VGS(th): NoneV QG(typ @10V): 3.3nC ID (@25°C): NoneA Special Features: Small Signal Operating Temperature: None°C Budgetary Price €/1k: 0.05

BSP92P

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: P-channel enhancement mode Field-Effect Transistor (FET), -250 V, SOT-223

IDpuls: NoneA VGS(th): NoneV Rth: 115.0K/W Pin Count: 4.0Pins Ptot: NoneW VDS: NoneV Package: SOT-223 Polarity: P Mounting: SMD Mode: Enhancement Ciss: 83.0pF Coss: 13.0pF Special Features: Small Power QG(typ @10V): -4.3nC RDS (on)(@10V): NonemΩ ID (@25°C): NoneA Operating Temperature: None°C Budgetary Price €/1k: 0.16

IRLML5103

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: -30V Single P-Channel Power MOSFET in a Micro 3 package

Moisture Sensitivity Level: 1 Mounting: SMD Polarity: P RthJA: NoneK/W Tj: None°C VDS: NoneV Ptot(@ TA=25°C): NoneW VGS: NoneV Package: SOT-23 Qgd: 1.1nC RDS (on)(@10V): NonemΩ RDS (on)(@4.5V): NonemΩ VGS(th): NoneV QG(typ @10V): 3.4nC ID (@25°C): NoneA Special Features: Small Signal Budgetary Price €/1k: 0.06