INFINEON

Infineon 英飞凌专注于迎接现代社会的三大科技挑战: 高能效、 移动性和 安全性,为汽车和工业功率器件、芯片卡和安全应用提供半导体和系统解决方案。英飞凌的产品素以高可靠性、卓越质量和创新性著称,并在模拟和混合信号、射频、功率以及嵌入式控制装置领域掌握尖端技术。

IRLML6401

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: -12V Single P-Channel Power MOSFET in a Micro 3 package

Mounting: SMD Package: SOT-23 Ptot(@ TA=25°C): NoneW RthJA: NoneK/W Tj: None°C VDS: NoneV Moisture Sensitivity Level: 1 Polarity: P Qgd: 2.6nC VGS: NoneV RDS (on)(@4.5V): NonemΩ VGS(th): -0.55V ID (@25°C): NoneA QG(typ @4.5V): 10.0nC Special Features: Small Power Budgetary Price €/1k: 0.06

BSS138N

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: N-Channel Small Signal MOSFET 60 V in SOT23 package

IDpuls: NoneA VGS(th): NoneV RthJA: NoneK/W Ptot: NoneW VDS: NoneV Package: SOT-23 Ciss: 32.0pF Coss: 7.2pF Special Features: Small Signal QG(typ @10V): 1.0nC RDS (on)(@10V): NonemΩ Polarity: N ID (@25°C): NoneA Operating Temperature: None°C Operating Temperature: None°C Budgetary Price €/1k: 0.03

IRFL4315

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: 150V Single N-Channel IR MOSFET in a SOT-223 package

VDS: NoneV Moisture Sensitivity Level: 1 Polarity: N Qgd: 6.8nC Tj: None°C Mounting: SMD Package: SOT-223 Ptot(@ TA=25°C): NoneW RthJA: NoneK/W VGS: NoneV RDS (on)(@10V): NonemΩ VGS(th): 4.0V QG(typ @10V): 12.0nC ID (@25°C): NoneA Special Features: Small Power Operating Temperature: None°C Budgetary Price €/1k: 0.27
VR: NoneV CT: NonepF IF: NonemA VF: NonemV Configuration: 2 Independent Mounting: SMT

IRF5802

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: 150V Single N-Channel MOSFET in a TSOP-6 (Micro 6) package

Mounting: SMD Ptot: NoneW RthJA: NoneK/W VDS: NoneV Moisture Sensitivity Level: 1 Polarity: N Ptot(@ TA=25°C): NoneW Qgd: 2.4nC Tj: None°C VGS: NoneV Package: TSOP-6 RDS (on)(@10V): NonemΩ VGS(th): 4.25V QG(typ @10V): 4.5nC ID (@25°C): NoneA Special Features: Small Power Operating Temperature: None°C Budgetary Price €/1k: 0.12

IRLML2246

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: -20V Single P-Channel StrongIRFET™ Power MOSFET in a SOT-23 package

Moisture Sensitivity Level: 1 Package: SOT-23 Polarity: P Qgd: 1.2nC Tj: None°C VGS: NoneV Mounting: SMD Ptot(@ TA=25°C): NoneW RthJA: NoneK/W VDS: NoneV RDS (on)(@4.5V): NonemΩ VGS(th): -0.75V ID (@25°C): NoneA QG(typ @4.5V): 2.9nC Special Features: Small Power Budgetary Price €/1k: 0.06

SN7002W

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: N-Channel Small Signal MOSFET 60 V in SOT-323 package

IDpuls: NoneA VGS(th): NoneV Ptot: NoneW VDS: NoneV ID: NoneA Package: SOT-323 Ciss: 34.0pF Coss: 7.2pF Special Features: Small Signal RDS (on)(@10V): NonemΩ Polarity: N Operating Temperature: None°C Operating Temperature: None°C QG(typ @10V): 0.23nC Budgetary Price €/1k: 0.03

BSS126I

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: 600V N-Channel small signal depletion-mode MOSFET

ID (@25°C): NoneA IDpuls: NoneA Mounting: SMD Operating Temperature: None°C Ptot: NoneW Package: SOT-23 Polarity: N QG(typ @4.5V): 1.4nC RDS (on)(@10V): NonemΩ VDS: NoneV VGS(th): -2.0V Special Features: Depletion mode RDS (on)(@0V): 700000.0mΩ Budgetary Price €/1k: 0.07

BSP324

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: N-Channel Small Signal MOSFET 400 V in SOT-223 package

IDpuls: NoneA VGS(th): NoneV Pin Count: 4.0Pins Ptot: NoneW VDS: NoneV Package: SOT-223 Polarity: N Mounting: SMD Mode: Enhancement Ciss: 103.0pF Coss: 9.2pF Special Features: Small Power QG(typ @10V): 4.54nC RDS (on)(@10V): NonemΩ ID (@25°C): NoneA Operating Temperature: None°C Budgetary Price €/1k: 0.24

BSR802N

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: N-Channel Small Signal MOSFET 20 V in SC-59 package

IDpuls: NoneA VGS(th): NoneV RthJA: NoneK/W Ptot: NoneW VDS: NoneV QG: 4.7nC Package: SC59 Ciss: 1013.0pF Coss: 290.0pF RDS (on): NonemΩ RDS (on)(@1.8V): NonemΩ RDS (on)(@2.5V): NonemΩ Special Features: Small Signal Polarity: N ID (@25°C): NoneA Operating Temperature: None°C Operating Temperature: None°C Budgetary Price €/1k: 0.14