INFINEON

Infineon 英飞凌专注于迎接现代社会的三大科技挑战：高能效、移动性和安全性，为汽车和工业功率器件、芯片卡和安全应用提供半导体和系统解决方案。英飞凌的产品素以高可靠性、卓越质量和创新性著称，并在模拟和混合信号、射频、功率以及嵌入式控制装置领域掌握尖端技术。

IGLD65R140D2

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 其他场效应晶体管
数据:

简介: CoolGaN™ Transistor 650 V G5

Mounting: SMT VDS: NoneV RDS (on)(typ): 140.0mΩ Generation: G5 RDS (on): NonemΩ

IGT60R190D1

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 其他场效应晶体管
数据:

简介: 600 V CoolGaN™ 600 V e-mode power transistor for ultimate efficiency and reliability

Mounting: SMT QG: 3.2nC VDS: NoneV RDS (on)(typ): 140.0mΩ ID (@ TA=25°C): NoneA IDpuls(@25°C): NoneA Generation: ≤ G3

GS-065-011-1-L-TR

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 其他场效应晶体管
数据:

简介: CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability

ID (@25°C): NoneA IDpuls(@25°C): NoneA Mounting: SMT QG: 2.2nC RDS (on)(typ): 150.0mΩ RDS (on): NonemΩ VDS: NoneV Generation: ≤ G3

GS-065-011-2-L-TR

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 其他场效应晶体管
数据:

简介: CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability

ID (@25°C): NoneA IDpuls(@25°C): NoneA Mounting: SMT QG: 2.2nC RDS (on)(typ): 150.0mΩ RDS (on): NonemΩ VDS: NoneV Generation: ≤ G3

BTF3035EJ

分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路
数据:

简介: The BTF3035EJ is a 35 mΩ single channel Smart Low-Side Power Switch with in a PG-TDSO-8-31 package providing embedded protective functions.

EAS/Avalanche Energy: 138.0mJ IL(LIM): NoneA IL(LIM)_TRIGGER: NoneA ISC: NoneA Mounting: SMT VDS: NoneV ID: NoneA Load Current: 5.0A Diagnostic Features: Output Status Control Interface: Discrete IL(nom): 5.0A Operating Temperature: None°C EAS(Energy capability): 138.0mJ toff(Turn OFF time): Noneµs ton(Turn ON time): Noneµs Family: HITFET™ + Classification: ISO 26262-ready Channels: 1.0 RDS (on)(@ Tj = 25°C): 32.0mΩ RDS (on)(@ Tj = 150°C): NonemΩ 更多

Diagnostics: Digital Protection strategy: Auto-restart Nominal Load Current per channel: 5.0A IL(Short Circuit Current): 14.0A Recommended Operating Voltage: NoneV

GS-065-008-1-L-TR

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 其他场效应晶体管
数据:

简介: CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability

ID (@25°C): NoneA IDpuls(@25°C): NoneA Mounting: SMT QG: 1.5nC RDS (on)(typ): 225.0mΩ RDS (on): NonemΩ VDS: NoneV Generation: ≤ G3

IGLR65R200D2

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 其他场效应晶体管
数据:

简介: CoolGaN™ Transistor 650 V G5

Mounting: SMT VDS: NoneV RDS (on)(typ): 200.0mΩ Generation: G5 RDS (on): NonemΩ

BTF3050EJ

分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路
数据:

简介: The BTF3050EJ is a 50 mΩ single channel Smart Low-Side Power Switch with in a PG-TDSO-8-31 package providing embedded protective functions.

EAS/Avalanche Energy: 94.0mJ IL(LIM): NoneA IL(LIM)_TRIGGER: NoneA ISC: NoneA Mounting: SMT VDS: NoneV ID: NoneA Load Current: 4.0A Diagnostic Features: Output Status Control Interface: Discrete IL(nom): 4.0A Operating Temperature: None°C EAS(Energy capability): 94.0mJ toff(Turn OFF time): Noneµs ton(Turn ON time): Noneµs Family: HITFET™ + Classification: ISO 26262-ready Channels: 1.0 RDS (on)(@ Tj = 25°C): 45.0mΩ RDS (on)(@ Tj = 150°C): NonemΩ 更多

Diagnostics: Digital Protection strategy: Auto-restart Nominal Load Current per channel: 4.0A IL(Short Circuit Current): 10.0A Recommended Operating Voltage: NoneV