INFINEON

Infineon 英飞凌专注于迎接现代社会的三大科技挑战：高能效、移动性和安全性，为汽车和工业功率器件、芯片卡和安全应用提供半导体和系统解决方案。英飞凌的产品素以高可靠性、卓越质量和创新性著称，并在模拟和混合信号、射频、功率以及嵌入式控制装置领域掌握尖端技术。

GS-065-004-6-L-TR

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 其他场效应晶体管
数据:

简介: CoolGaN™ Transistor 700 V G4 for ultimate efficiency and reliability

VDS: NoneV RDS (on)(typ): 315.0mΩ RDS (on): NonemΩ QG: 0.8nC Mounting: SMT ID (@25°C): NoneA IDpuls(@25°C): NoneA Generation: G4

IGLR65R270D2

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 其他场效应晶体管
数据:

简介: CoolGaN™ Transistor 650 V G5

Mounting: SMT VDS: NoneV RDS (on)(typ): 270.0mΩ Generation: G5 RDS (on): NonemΩ

GS66508T-TR

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 其他场效应晶体管
数据:

简介: CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability

ID (@25°C): NoneA IDpuls(@25°C): NoneA Mounting: SMT QG: 6.1nC RDS (on)(typ): 50.0mΩ RDS (on): NonemΩ VDS: NoneV Generation: ≤ G3

IGI60F2020A1L

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 其他场效应晶体管
数据:

简介: CoolGaN™ Integrated Power Stage (IPS) half-bridge 600 V to deliver high density, high efficiency solution

QG: 1.5nC Mounting: SMT VDS: NoneV RDS (on)(typ): 200.0mΩ ID (@ TA=25°C): NoneA IDpuls(@25°C): NoneA Generation: ≤ G3

IGI60F2727A1L

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 其他场效应晶体管
数据:

简介: CoolGaN™ Integrated Power Stage (IPS) half-bridge 600 V to deliver high density, high efficiency solution

QG: 1.2nC Mounting: SMT VDS: NoneV RDS (on)(typ): 270.0mΩ ID (@ TA=25°C): NoneA IDpuls(@25°C): NoneA Generation: ≤ G3

BTS3050EJ

分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路

简介: The BTS3050EJ is a 50 mΩ single channel Smart Low-Side Power Switch with in a PG-TDSO8-31 package providing embedded protective functions

EAS/Avalanche Energy: 62.0mJ ID: 4.0A ID(lim): NoneA IL(LIM): NoneA Mounting: SMT VDS: NoneV Load Current: 4.0A Diagnostic Features: Output Status Control Interface: Discrete IL(nom): 4.0A Operating Temperature: None°C EAS(Energy capability): 62.0mJ toff(Turn OFF time): Noneµs ton(Turn ON time): Noneµs Family: HITFET™ + Classification: ISO 26262-ready Channels: 1.0 RDS (on)(@ Tj = 25°C): 44.0mΩ RDS (on)(@ Tj = 150°C): NonemΩ Diagnostics: Digital 更多

Protection strategy: Auto-restart Nominal Load Current per channel: 4.0A IL(Short Circuit Current): 15.0A Recommended Operating Voltage: NoneV

BTF3125EJ

分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路
数据:

简介: The BTF3125EJ is a 125 mΩ single channel Smart Low-Side Power Switch with in a PG-TDSO-8-31 package providing embedded protective functions.

EAS/Avalanche Energy: 42.0mJ IL(LIM): NoneA IL(LIM)_TRIGGER: NoneA ISC: NoneA Mounting: SMT VDS: NoneV ID: NoneA Load Current: 2.0A Diagnostic Features: Output Status Control Interface: Discrete IL(nom): 2.0A Operating Temperature: None°C EAS(Energy capability): 42.0mJ toff(Turn OFF time): Noneµs ton(Turn ON time): Noneµs Family: HITFET™ + Classification: ISO 26262-ready Channels: 1.0 RDS (on)(@ Tj = 25°C): 110.0mΩ RDS (on)(@ Tj = 150°C): NonemΩ 更多

Diagnostics: Digital Protection strategy: Auto-restart Nominal Load Current per channel: 2.0A IL(Short Circuit Current): 5.0A Recommended Operating Voltage: NoneV

BTS3011TE

分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路
数据:

简介: The BTS3011TE is a 11 mΩ single channel Smart Low-Side Power Switch with in a PG-TO252-5 package providing embedded protective functions.

EAS/Avalanche Energy: 390.0mJ IL(LIM): NoneA IL(LIM)_TRIGGER: NoneA ISC: NoneA Mounting: SMT VDS: NoneV ID: NoneA Load Current: 10.0A Diagnostic Features: Output Status Control Interface: Discrete IL(nom): 10.0A Operating Temperature: None°C EAS(Energy capability): 390.0mJ toff(Turn OFF time): Noneµs ton(Turn ON time): Noneµs Family: HITFET™ + Classification: ISO 26262-ready Channels: 1.0 RDS (on)(@ Tj = 25°C): 11.0mΩ RDS (on)(@ Tj = 150°C): NonemΩ 更多

Diagnostics: Digital Protection strategy: Auto-restart Nominal Load Current per channel: 10.0A IL(Short Circuit Current): 35.0A Recommended Operating Voltage: NoneV

BTS3035EJ

分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路

简介: The BTS3035EJ is a 35 mΩ single channel Smart Low-Side Power Switch with in a PG-TDSO8-31 package providing embedded protective functions.

EAS/Avalanche Energy: 105.0mJ ID: 5.0A ID(lim): NoneA IL(LIM): NoneA Mounting: SMT VDS: NoneV Load Current: 5.0A Diagnostic Features: Output Status Control Interface: Discrete IL(nom): 5.0A Operating Temperature: None°C EAS(Energy capability): 105.0mJ toff(Turn OFF time): Noneµs ton(Turn ON time): Noneµs Family: HITFET™ + Classification: ISO 26262-ready Channels: 1.0 RDS (on)(@ Tj = 25°C): 30.0mΩ RDS (on)(@ Tj = 150°C): NonemΩ Diagnostics: Digital 更多

Protection strategy: Auto-restart Nominal Load Current per channel: 5.0A IL(Short Circuit Current): 20.0A Recommended Operating Voltage: NoneV

BTS3035TF

分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路
数据:

简介: The BTS3035TF is a 35 mOhm single channel Smart Low-Side Power Switch within a PG-T0252-3 package providing embedded protective function

EAS/Avalanche Energy: 105.0mJ ID: 5.0A ID(lim): NoneA IL(LIM): NoneA Mounting: SMT VDS: NoneV Load Current: 5.0A Control Interface: Discrete IL(nom): 5.0A Operating Temperature: None°C EAS(Energy capability): 105.0mJ toff(Turn OFF time): Noneµs ton(Turn ON time): Noneµs Family: HITFET™ + Classification: ISO 26262-ready Channels: 1.0 RDS (on)(@ Tj = 25°C): 30.0mΩ RDS (on)(@ Tj = 150°C): NonemΩ Diagnostics: - Protection strategy: Auto-restart 更多

Nominal Load Current per channel: 5.0A IL(Short Circuit Current): 20.0A Recommended Operating Voltage: NoneV