INFINEON

Infineon 英飞凌专注于迎接现代社会的三大科技挑战：高能效、移动性和安全性，为汽车和工业功率器件、芯片卡和安全应用提供半导体和系统解决方案。英飞凌的产品素以高可靠性、卓越质量和创新性著称，并在模拟和混合信号、射频、功率以及嵌入式控制装置领域掌握尖端技术。

IGI60L5050A1M

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 其他场效应晶体管
数据:

Mounting: SMT QG: 0.58nC VDS: NoneV RDS (on)(typ): 500.0mΩ ID (@ TA=25°C): NoneA IDpuls(@25°C): NoneA Generation: ≤ G3

IGLD60R190D1S

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 其他场效应晶体管
数据:

简介: 600 V CoolGaN™ e-mode power transistor for ultimate efficiency and reliability

Mounting: SMT QG: 3.2nC VDS: NoneV RDS (on)(typ): 140.0mΩ ID (@ TA=25°C): NoneA IDpuls(@25°C): NoneA Generation: ≤ G3

GS-065-004-1-L-TR

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 其他场效应晶体管
数据:

简介: CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability

ID (@25°C): NoneA IDpuls(@25°C): NoneA Mounting: SMT QG: 0.8nC RDS (on)(typ): 450.0mΩ RDS (on): NonemΩ VDS: NoneV Generation: ≤ G3

BTS3050TF

分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路
数据:

简介: The BTS3050TF is a 50 mΩ single channel Smart Low-Side Power Switch within a PG-T0252-3 package providing embedded protective functions.

EAS/Avalanche Energy: 64.0mJ ID: 4.0A ID(lim): NoneA IL(LIM): NoneA Mounting: SMT VDS: NoneV Load Current: 4.0A Control Interface: Discrete IL(nom): 4.0A Operating Temperature: None°C EAS(Energy capability): 64.0mJ toff(Turn OFF time): Noneµs ton(Turn ON time): Noneµs Family: HITFET™ + Classification: ISO 26262-ready Channels: 1.0 RDS (on)(@ Tj = 25°C): 44.0mΩ RDS (on)(@ Tj = 150°C): NonemΩ Diagnostics: - Protection strategy: Auto-restart 更多

Nominal Load Current per channel: 4.0A IL(Short Circuit Current): 15.0A Recommended Operating Voltage: NoneV

BTS3080TF

分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路
数据:

简介: The BTS3080TF is a 80 mΩ single channel Smart Low-Side Power Switch within a PG-T0252-3 package providing embedded protective functions.

EAS/Avalanche Energy: 38.0mJ ID: 3.0A ID(lim): NoneA Mounting: SMT VDS: NoneV Load Current: 3.0A Control Interface: Discrete IL(nom): 3.0A Recommended Operating Voltage: NoneV Operating Temperature: None°C EAS(Energy capability): 38.0mJ toff(Turn OFF time): Noneµs ton(Turn ON time): Noneµs Family: HITFET™ + Classification: ISO 26262-ready Channels: 1.0 RDS (on)(@ Tj = 25°C): 69.0mΩ RDS (on)(@ Tj = 150°C): NonemΩ Diagnostics: - Protection strategy: Auto-restart 更多

Nominal Load Current per channel: 3.0A IL(Short Circuit Current): 10.0A

BTS3080EJ

分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路

简介: The BTS3080EJ is a 80 mΩ single channel Smart Low-Side Power Switch with in a PG-TDS08-31 package providing embedded protective functions.

EAS/Avalanche Energy: 35.0mJ ID: 3.0A ID(lim): NoneA Mounting: SMT VDS: NoneV Load Current: 3.0A Diagnostic Features: Output Status Control Interface: Discrete IL(nom): 3.0A Recommended Operating Voltage: NoneV Operating Temperature: None°C EAS(Energy capability): 35.0mJ toff(Turn OFF time): Noneµs ton(Turn ON time): Noneµs Family: HITFET™ + Classification: ISO 26262-ready Channels: 1.0 RDS (on)(@ Tj = 25°C): 69.0mΩ RDS (on)(@ Tj = 150°C): NonemΩ Diagnostics: Digital 更多

Protection strategy: Auto-restart Nominal Load Current per channel: 3.0A IL(Short Circuit Current): 10.0A

IGI60F5050A1L

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 其他场效应晶体管
数据:

简介: CoolGaN™ Integrated Power Stage (IPS) half-bridge 600 V to deliver high density, high efficiency solution

QG: 0.58nC Mounting: SMT VDS: NoneV RDS (on)(typ): 500.0mΩ ID (@ TA=25°C): NoneA IDpuls(@25°C): NoneA Generation: ≤ G3

BTT3050EJ

分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路
数据:

简介: The BTT3050EJ is a 50 mΩ single channel Smart Low-Side Power Switch within a PG-TDSO-8 exposed package providing embedded protective functions.

Mounting: SMT IL(LIM): NoneA ID: NoneA VDS: NoneV Certifications: ISO 26262-ready Load Current: 4.0A Diagnostic Features: Output Status Control Interface: Discrete IL(nom): 4.0A Recommended Operating Voltage: NoneV Operating Temperature: None°C EAS(Energy capability): 100.0mJ toff(Turn OFF time): Noneµs ton(Turn ON time): Noneµs Family: HITFET™ + Classification: ISO 26262-ready Channels: 1.0 RDS (on)(@ Tj = 25°C): 50.0mΩ RDS (on)(@ Tj = 150°C): NonemΩ Diagnostics: Digital 更多

Protection strategy: Latch Nominal Load Current per channel: 4.0A IL(Short Circuit Current): 10.0A

IGLD60R190D1

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 其他场效应晶体管
数据:

简介: 600 V CoolGaN™ e-mode power transistor for ultimate efficiency and reliability

Mounting: SMT Package: LSON-8-1 Polarity: N QG: 3.2nC VDS: NoneV VGS(th): 1.2V RDS (on)(typ): 140.0mΩ ID (@ TA=25°C): NoneA IDpuls(@25°C): NoneA Generation: ≤ G3

BTS3125TF

分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路
数据:

简介: The BTS3125TF is a 125 mΩ single channel Smart Low-Side Power Switch within a PG-T0252-3 package providing embedded protective functions.

EAS/Avalanche Energy: 24.0mJ ID: 2.0A ID(lim): NoneA Mounting: SMT VDS: NoneV Load Current: 2.0A Control Interface: Discrete IL(nom): 2.0A Recommended Operating Voltage: NoneV Operating Temperature: None°C EAS(Energy capability): 24.0mJ toff(Turn OFF time): Noneµs ton(Turn ON time): Noneµs Family: HITFET™ + Channels: 1.0 RDS (on)(@ Tj = 25°C): 108.0mΩ RDS (on)(@ Tj = 150°C): NonemΩ Diagnostics: - Protection strategy: Auto-restart Nominal Load Current per channel: 2.0A 更多

IL(Short Circuit Current): 7.0A Classification: ISO 26262-ready