INFINEON
Infineon 英飞凌专注于迎接现代社会的三大科技挑战： 高能效、 移动性和 安全性，为汽车和工业功率器件、芯片卡和安全应用提供半导体和系统解决方案。英飞凌的产品素以高可靠性、卓越质量和创新性著称，并在模拟和混合信号、射频、功率以及嵌入式控制装置领域掌握尖端技术。
BSP76
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路数据:
简介: N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions.
EAS/Avalanche Energy: 150.0mJ
ID: 1.4A
ID(lim): NoneA
IL(LIM): NoneA
Mounting: SMT
Ptot: NoneW
VDS: NoneV
Load Current: 1.8A
Control Interface: Discrete
IL(nom): 1.4A
Operating Temperature: None°C
EAS(Energy capability): 150.0mJ
toff(Turn OFF time): Noneµs
ton(Turn ON time): Noneµs
Family: Classic HITFET™
Classification: -
Channels: 1.0
RDS (on)(@ Tj = 25°C): 190.0mΩ
RDS (on)(@ Tj = 150°C): NonemΩ
Diagnostics: -
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Protection strategy: Auto-restart
Nominal Load Current per channel: 1.4A
IL(Short Circuit Current): 5.0A
Recommended Operating Voltage: NoneV
BTS3125EJ
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路简介: The BTS3125EJ is a 125 mΩ single channel Smart Low-Side Power Switch with in a PG-TDSO8-31 package providing embedded protective functions.
EAS/Avalanche Energy: 30.0mJ
ID: 2.0A
ID(lim): NoneA
Mounting: SMT
VDS: NoneV
Load Current: 2.0A
Diagnostic Features: Output Status
Control Interface: Discrete
IL(nom): 2.0A
Recommended Operating Voltage: NoneV
Operating Temperature: None°C
EAS(Energy capability): 30.0mJ
toff(Turn OFF time): Noneµs
ton(Turn ON time): Noneµs
Family: HITFET™ +
Classification: ISO 26262-ready
Channels: 1.0
RDS (on)(@ Tj = 25°C): 108.0mΩ
RDS (on)(@ Tj = 150°C): NonemΩ
Diagnostics: Digital
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Protection strategy: Auto-restart
Nominal Load Current per channel: 2.0A
IL(Short Circuit Current): 7.0A
BTT3018EJ
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路数据:
简介: The BTT3018EJ is a 16 mΩ single channel Smart Low-Side Power Switch within a PG-TDSO-8 expoased package providing embedded protective functions.
EAS/Avalanche Energy: 150.0mJ
IL(LIM): NoneA
Mounting: SMT
VDS: NoneV
ID: NoneA
Certifications: ISO 26262-ready
Load Current: 7.0A
Diagnostic Features: Output Status
Control Interface: Discrete
IL(nom): 7.0A
Recommended Operating Voltage: NoneV
Operating Temperature: None°C
EAS(Energy capability): 150.0mJ
toff(Turn OFF time): Noneµs
ton(Turn ON time): Noneµs
Family: HITFET™ +
Classification: ISO 26262-ready
Channels: 1.0
RDS (on)(@ Tj = 25°C): 16.0mΩ
RDS (on)(@ Tj = 150°C): NonemΩ
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Diagnostics: Digital
Protection strategy: Latch
Nominal Load Current per channel: 7.0A
IL(Short Circuit Current): 30.0A
EAS/Avalanche Energy: 2000.0mJ
ID: 2.4A
ID(lim): NoneA
Load Current: 2.4A
Mounting: SMT
Ptot: NoneW
VDS: NoneV
Control Interface: Discrete
IL(nom): 2.4A
Recommended Operating Voltage: NoneV
Operating Temperature: None°C
EAS(Energy capability): 2000.0mJ
toff(Turn OFF time): Noneµs
ton(Turn ON time): Noneµs
Family: Classic HITFET™
Classification: -
Channels: 1.0
RDS (on)(@ Tj = 25°C): 90.0mΩ
RDS (on)(@ Tj = 150°C): NonemΩ
Diagnostics: -
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Protection strategy: Latch
Nominal Load Current per channel: 2.4A
IL(Short Circuit Current): 10.0A
BSP77E6433
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路数据:
简介: N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions.
EAS/Avalanche Energy: 250.0mJ
ID: 2.17A
ID(lim): NoneA
IL(LIM): NoneA
Mounting: SMT
Ptot: NoneW
VDS: NoneV
Load Current: 2.8A
Control Interface: Discrete
IL(nom): 2.17A
Operating Temperature: None°C
EAS(Energy capability): 250.0mJ
toff(Turn OFF time): Noneµs
ton(Turn ON time): Noneµs
Family: Classic HITFET™
Classification: -
Channels: 1.0
RDS (on)(@ Tj = 25°C): 90.0mΩ
RDS (on)(@ Tj = 150°C): NonemΩ
Diagnostics: -
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Protection strategy: Auto-restart
Nominal Load Current per channel: 2.17A
IL(Short Circuit Current): 10.0A
Recommended Operating Voltage: NoneV
BSP78
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路数据:
简介: N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions
EAS/Avalanche Energy: 500.0mJ
ID: 3.0A
ID(lim): NoneA
IL(LIM): NoneA
Mounting: SMT
Ptot: NoneW
VDS: NoneV
Load Current: 4.0A
Control Interface: Discrete
IL(nom): 3.0A
Operating Temperature: None°C
EAS(Energy capability): 500.0mJ
toff(Turn OFF time): Noneµs
ton(Turn ON time): Noneµs
Family: Classic HITFET™
Classification: -
Channels: 1.0
RDS (on)(@ Tj = 25°C): 35.0mΩ
RDS (on)(@ Tj = 150°C): NonemΩ
Diagnostics: -
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Protection strategy: Auto-restart
Nominal Load Current per channel: 3.0A
IL(Short Circuit Current): 18.0A
Recommended Operating Voltage: NoneV
BTS118D
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路数据:
简介: N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions.
EAS/Avalanche Energy: 2000.0mJ
ID: 2.4A
ID(lim): NoneA
IL(LIM): NoneA
Mounting: SMT
Ptot: NoneW
VDS: NoneV
Load Current: 3.2A
Control Interface: Discrete
IL(nom): 2.4A
Operating Temperature: None°C
EAS(Energy capability): 2000.0mJ
toff(Turn OFF time): Noneµs
ton(Turn ON time): Noneµs
Family: Classic HITFET™
Classification: -
Channels: 1.0
RDS (on)(@ Tj = 25°C): 90.0mΩ
RDS (on)(@ Tj = 150°C): NonemΩ
Diagnostics: -
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Protection strategy: Latch
Nominal Load Current per channel: 2.4A
IL(Short Circuit Current): 15.0A
Recommended Operating Voltage: NoneV
BTS142D
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路数据:
简介: N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions.
EAS/Avalanche Energy: 3500.0mJ
ID: 4.6A
ID(lim): NoneA
IL(LIM): NoneA
Mounting: SMT
Ptot: NoneW
VDS: NoneV
Load Current: 5.5A
Control Interface: Discrete
IL(nom): 4.6A
Operating Temperature: None°C
EAS(Energy capability): 3500.0mJ
toff(Turn OFF time): Noneµs
ton(Turn ON time): Noneµs
Family: Classic HITFET™
Classification: -
Channels: 1.0
RDS (on)(@ Tj = 25°C): 27.0mΩ
RDS (on)(@ Tj = 150°C): NonemΩ
Diagnostics: -
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Protection strategy: Latch
Nominal Load Current per channel: 4.6A
IL(Short Circuit Current): 30.0A
Recommended Operating Voltage: NoneV
BTS3110N
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路数据:
简介: N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions.
EAS/Avalanche Energy: 150.0mJ
ID: 1.4A
ID(lim): NoneA
Load Current: 1.4A
Mounting: SMT
Ptot: NoneW
VDS: NoneV
Control Interface: Discrete
IL(nom): 1.4A
Recommended Operating Voltage: NoneV
Operating Temperature: None°C
EAS(Energy capability): 150.0mJ
toff(Turn OFF time): Noneµs
ton(Turn ON time): Noneµs
Family: Classic HITFET™
Classification: -
Channels: 1.0
RDS (on)(@ Tj = 25°C): 190.0mΩ
RDS (on)(@ Tj = 150°C): NonemΩ
Diagnostics: -
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Protection strategy: Latch
Nominal Load Current per channel: 1.4A
IL(Short Circuit Current): 5.0A
BTS3118N
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路数据:
简介: N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions
EAS/Avalanche Energy: 250.0mJ
ID: 2.17A
ID(lim): NoneA
Load Current: 2.17A
Mounting: SMT
Ptot: NoneW
VDS: NoneV
Control Interface: Discrete
IL(nom): 2.17A
Recommended Operating Voltage: NoneV
Operating Temperature: None°C
EAS(Energy capability): 250.0mJ
toff(Turn OFF time): Noneµs
ton(Turn ON time): Noneµs
Family: Classic HITFET™
Classification: -
Channels: 1.0
RDS (on)(@ Tj = 25°C): 90.0mΩ
RDS (on)(@ Tj = 150°C): NonemΩ
Diagnostics: -
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Protection strategy: Latch
Nominal Load Current per channel: 2.17A
IL(Short Circuit Current): 10.0A