CSD75207W15
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 1.5mm x 1.5mm WLP 封装、具有栅极 ESD 保护的双通道共源极、27mΩ、-20V、P 沟道 NexFET™ 功率 MOSFET
VDS (V): -20
VGS (V): -6
Type: P-channel
Configuration: Dual Common Source
Rds(on) at VGS=4.5 V (max) (mΩ): 27
Rds(on) at VGS=2.5 V (max) (mΩ): 39
VGSTH typ (typ) (V): -0.8
QG (typ) (nC): 2.9
QGD (typ) (nC): 0.4
QGS (typ) (nC): 0.7
ID - silicon limited at TC=25°C (A): 3.9
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): -20
VGS (V): -6
Type: P-channel
Configuration: Dual Common Source
Rds(on) at VGS=4.5 V (max) (mΩ): 27
Rds(on) at VGS=2.5 V (max) (mΩ): 39
更多
VGSTH typ (typ) (V): -0.8
QG (typ) (nC): 2.9
QGD (typ) (nC): 0.4
QGS (typ) (nC): 0.7
ID - silicon limited at TC=25°C (A): 3.9
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD22202W15
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 1.5mm x 1.5mm WLP 封装、具有栅极 ESD 保护的单通道、12.2mΩ、-8V、P 沟道 NexFET™ 功率 MOSFET
VDS (V): -8
VGS (V): -6
Type: P-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 12.2
Rds(on) at VGS=2.5 V (max) (mΩ): 17.4
VGSTH typ (typ) (V): -0.8
QG (typ) (nC): 6.5
QGD (typ) (nC): 1
QGS (typ) (nC): 1.6
ID - silicon limited at TC=25°C (A): 10
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): -8
VGS (V): -6
Type: P-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 12.2
Rds(on) at VGS=2.5 V (max) (mΩ): 17.4
更多
VGSTH typ (typ) (V): -0.8
QG (typ) (nC): 6.5
QGD (typ) (nC): 1
QGS (typ) (nC): 1.6
ID - silicon limited at TC=25°C (A): 10
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD25213W10
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 1mm x 1mm WLP 封装、具有栅极 ESD 保护的单通道、47mΩ、-20V、P 沟道 NexFET™ 功率 MOSFET
VDS (V): -20
VGS (V): -6
Type: P-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 47
Rds(on) at VGS=2.5 V (max) (mΩ): 67
VGSTH typ (typ) (V): -0.85
QG (typ) (nC): 2.2
QGD (typ) (nC): 0.14
QGS (typ) (nC): 0.74
ID - silicon limited at TC=25°C (A): 1.6
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): -20
VGS (V): -6
Type: P-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 47
Rds(on) at VGS=2.5 V (max) (mΩ): 67
更多
VGSTH typ (typ) (V): -0.85
QG (typ) (nC): 2.2
QGD (typ) (nC): 0.14
QGS (typ) (nC): 0.74
ID - silicon limited at TC=25°C (A): 1.6
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD18537NKCS
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 TO-220 封装的单通道、14mΩ、60V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 60
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 14
VGSTH typ (typ) (V): 3
QG (typ) (nC): 14
QGD (typ) (nC): 2.3
QGS (typ) (nC): 5.2
ID - silicon limited at TC=25°C (A): 56
ID - package limited (A): 50
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 175
VDS (V): 60
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 14
VGSTH typ (typ) (V): 3
更多
QG (typ) (nC): 14
QGD (typ) (nC): 2.3
QGS (typ) (nC): 5.2
ID - silicon limited at TC=25°C (A): 56
ID - package limited (A): 50
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 175
CSD18537NQ5A
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单通道、13mΩ、60V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 60
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 13
VGSTH typ (typ) (V): 3
QG (typ) (nC): 14
QGD (typ) (nC): 2.3
QGS (typ) (nC): 4.7
ID - silicon limited at TC=25°C (A): 54
ID - package limited (A): 50
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 60
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 13
VGSTH typ (typ) (V): 3
更多
QG (typ) (nC): 14
QGD (typ) (nC): 2.3
QGS (typ) (nC): 4.7
ID - silicon limited at TC=25°C (A): 54
ID - package limited (A): 50
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD18532NQ5B
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单通道、3.4mΩ、60V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 60
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 3.4
VGSTH typ (typ) (V): 2.8
QG (typ) (nC): 49
QGD (typ) (nC): 7.9
QGS (typ) (nC): 16
ID - silicon limited at TC=25°C (A): 163
ID - package limited (A): 100
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 60
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 3.4
VGSTH typ (typ) (V): 2.8
更多
QG (typ) (nC): 49
QGD (typ) (nC): 7.9
QGS (typ) (nC): 16
ID - silicon limited at TC=25°C (A): 163
ID - package limited (A): 100
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD87381P
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 3mm x 2.5mm LGA 封装的 15A、30V、N 沟道同步降压 NexFET™ 功率 MOSFET
VDS (V): 30
VGS (V): 10
Type: Power block
Configuration: PowerBlock
ID - continuous drain current at TA=25°C (A): 15
Power loss (W): 1
Ploss current (A): 8
Features: Power supply
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 10
Type: Power block
Configuration: PowerBlock
ID - continuous drain current at TA=25°C (A): 15
Power loss (W): 1
Ploss current (A): 8
Features: Power supply
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD17381F4
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 1mm x 0.6mm LGA 封装、具有栅极 ESD 保护的单通道、117mΩ、30V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 30
VGS (V): 12
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 109
Rds(on) at VGS=4.5 V (max) (mΩ): 117
VGSTH typ (typ) (V): 0.85
QG (typ) (nC): 1.04
QGD (typ) (nC): 0.133
QGS (typ) (nC): 0.226
ID - silicon limited at TC=25°C (A): 3.1
ID - package limited (A): 3.1
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 12
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 109
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 117
VGSTH typ (typ) (V): 0.85
QG (typ) (nC): 1.04
QGD (typ) (nC): 0.133
QGS (typ) (nC): 0.226
ID - silicon limited at TC=25°C (A): 3.1
ID - package limited (A): 3.1
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD87588N
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 2.5mm LGA 封装的 25A、30V、N 沟道同步降压 NexFET™ 功率 MOSFET
VDS (V): 30
VGS (V): 20
Type: Power block
Configuration: PowerBlock
ID - continuous drain current at TA=25°C (A): 25
Power loss (W): 2.1
Ploss current (A): 15
Features: Power supply
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 20
Type: Power block
Configuration: PowerBlock
ID - continuous drain current at TA=25°C (A): 25
Power loss (W): 2.1
Ploss current (A): 15
Features: Power supply
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD17556Q5B
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单通道、1.8mΩ、30V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 1.4
Rds(on) at VGS=4.5 V (max) (mΩ): 1.8
VGSTH typ (typ) (V): 1.4
QG (typ) (nC): 28.5
QGD (typ) (nC): 6.9
QGS (typ) (nC): 10.7
ID - silicon limited at TC=25°C (A): 215
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 1.4
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 1.8
VGSTH typ (typ) (V): 1.4
QG (typ) (nC): 28.5
QGD (typ) (nC): 6.9
QGS (typ) (nC): 10.7
ID - silicon limited at TC=25°C (A): 215
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150