P[tot](@ T[A]=25°C) max: 2.0W
Q[gd](typ): 5.3nC
T[j] max: 150.0°C
V[GS] max: 20.0V
Package: SO-8
Polarity: N+N
Moisture Sensitivity Level: 1
R[thJA] max: 62.5K/W
V[DS] max: 30.0V
R[DS (on)](@10V) max: 50.0mΩ
R[DS (on)](@4.5V) max: 80.0mΩ
V[GS(th)] min: 1.0V
Q[G](typ @10V): 16.7nC
I[D ](@25°C) max: 5.3A
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.19
Package: SO-8
T[j] max: 150.0°C
V[DS] max: -20.0V
V[GS] max: 12.0V
Moisture Sensitivity Level: 1
Polarity: P+P
P[tot](@ T[A]=25°C) max: 2.0W
Q[gd](typ): 12.0nC
R[thJA] max: 62.5K/W
R[DS (on)](@4.5V) max: 18.0mΩ
V[GS(th)]: -0.73V
I[D ](@25°C) max: -9.0A
Q[G](typ @4.5V): 42.0nC
V[DS] max: 20.0V
Budgetary Price €/1k: 0.43
I[D ](@25°C) max: 17.0A
I[Dpuls] max: 68.0A
Mounting: SMD
Operating Temperature max: 150.0°C
P[tot] max: 2.5W
Polarity: N+N
Q[G](typ @4.5V): 6.7nC
Q[gd]: 2.0nC
R[th]: 4.2K/W
R[thJA] max: 50.0K/W
R[thJC] max: 4.2K/W
V[DS] max: 30.0V
V[GS(th)] max: 2.0V
Q[G](typ @10V): 13.0nC
R[DS (on)](@10V) max: 5.0mΩ
R[DS (on)](@4.5V) max: 7.0mΩ
R[DS (on)](@4.5V LL) max: 7.0mΩ
Package: Symmetrical Dual 5x6
Budgetary Price €/1k: 0.3
Moisture Sensitivity Level: 1
Package: SO-8
P[tot](@ T[A]=25°C) max: 2.0W
Q[gd](typ): 4.5nC
R[thJA] max: 50.0K/W
V[DS] max: 80.0V
V[GS] max: 20.0V
Polarity: N+N
T[j] max: 150.0°C
R[DS (on)](@10V) max: 73.0mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 15.0nC
I[D ](@25°C) max: 3.6A
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.31
Package: SO-8
Polarity: P+P
P[tot](@ T[A]=25°C) max: 2.0W
Q[gd](typ): 5.9nC
T[j] max: 150.0°C
V[GS] max: 20.0V
Moisture Sensitivity Level: 1
R[thJA] max: 62.5K/W
V[DS] max: -30.0V
R[DS (on)](@10V) max: 58.0mΩ
R[DS (on)](@4.5V) max: 98.0mΩ
V[GS(th)] min: -1.0V
Q[G](typ @10V): 23.0nC
I[D ](@25°C) max: -4.9A
Budgetary Price €/1k: 0.29
IRLHS6276
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 20V Dual N-Channel StrongIRFET™ Power MOSFET in a PQFN 2x2 package
Moisture Sensitivity Level: 1
Polarity: N+N
P[tot](@ T[A]=25°C) max: 1.5W
Q[gd](typ): 1.3nC
R[thJA] max: 86.0K/W
V[DS] max: 20.0V
V[GS] max: 12.0V
Polarity: N+N
T[j] max: 150.0°C
R[DS (on)](@4.5V) max: 45.0mΩ
V[GS(th)]: 0.8V
I[D ](@25°C) max: 9.6A
Q[G](typ @4.5V): 3.1nC
Operating Temperature max: 150.0°C
Package: PQFN 2 x 2 (DFN2020)
Budgetary Price €/1k: 0.18
IRF7341
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 55V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
Moisture Sensitivity Level: 1
Package: SO-8
P[tot](@ T[A]=25°C) max: 2.0W
R[thJA] max: 62.5K/W
T[j] max: 150.0°C
V[DS] max: 55.0V
V[GS] max: 20.0V
Polarity: N+N
Q[gd](typ): 7.0nC
R[DS (on)](@10V) max: 50.0mΩ
R[DS (on)](@4.5V) max: 65.0mΩ
V[GS(th)] min: 1.0V
Q[G](typ @10V): 24.0nC
I[D ](@25°C) max: 4.7A
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.21
Moisture Sensitivity Level: 1
Package: SO-8
P[tot](@ T[A]=25°C) max: 2.0W
R[thJA] max: 62.5K/W
T[j] max: 150.0°C
V[GS] max: 20.0V
Polarity: P+P
Q[gd](typ): 8.4nC
V[DS] max: -55.0V
R[DS (on)](@10V) max: 105.0mΩ
R[DS (on)](@4.5V) max: 170.0mΩ
V[GS(th)] min: -1.0V
Q[G](typ @10V): 26.0nC
I[D ](@25°C) max: -3.4A
Budgetary Price €/1k: 0.3
Moisture Sensitivity Level: 1
Package: SO-8
P[tot](@ T[A]=25°C) max: 2.0W
R[thJA] max: 62.5K/W
T[j] max: 150.0°C
V[DS] max: -30.0V
V[GS] max: 20.0V
Polarity: P+P
Q[gd](typ): 6.0nC
R[DS (on)](@10V) max: 100.0mΩ
R[DS (on)](@4.5V) max: 160.0mΩ
V[GS(th)] min: -1.0V
Q[G](typ @10V): 16.7nC
I[D ](@25°C) max: -4.0A
Budgetary Price €/1k: 0.27
IRF7389
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
Package: SO-8
T[j] max: 150.0°C
Moisture Sensitivity Level: 1
Polarity: N+P
P[tot](@ T[A]=25°C) max: 2.5W
Q[gd](typ): 5.9nC
Q[gd](typ): 6.4nC
R[thJA] max: 50.0K/W
V[DS] max: 30.0V
V[GS] max: 20.0V
R[DS (on)](@10V) max: 29.0mΩ
R[DS (on)](@10V) max: 58.0mΩ
R[DS (on)](@4.5V) max: 46.0mΩ
R[DS (on)](@4.5V) max: 98.0mΩ
V[GS(th)] min: -1.0V
V[GS(th)] min: 1.0V
Q[G](typ @10V): 22.0nC
Q[G](typ @10V): 23.0nC
I[D ](@25°C) max: 7.3A
I[D ](@25°C) max: -5.3A
更多
V[DS] max: -30.0V
Budgetary Price €/1k: 0.28