状态: Lifetime 相似产品推荐 Compliance: Pb A H P Polarity: NPN IC Continuous (A): 0.15 VCEO(sus) Min (V): 12 hFE Min: 100 hFE Max: 180 PTM Max (W): 0.8 fT Min (MHz): 7000 NF Typ. (dB): 1.8 |S21e| 2 Typ. (dB): 9 Package Type: CPH-6 MSL Type: 1 MSL Temp (°C): 260 ON Target: N Reference Price: $0.1955

状态: Lifetime Compliance: Pb A H P Polarity: NPN IC Continuous (A): 0.15 VCEO(sus) Min (V): 12 hFE Min: 135 hFE Max: 270 PTM Max (W): 1.3 fT Min (MHz): 3000 NF Typ. (dB): 1.8 |S21e| 2 Typ. (dB): 8 Package Type: SOT-89 / PCP-1 MSL Type: 1 MSL Temp (°C): 260 ON Target: N Reference Price: $0.2133

状态: Lifetime 相似产品推荐 Compliance: Pb A H P Polarity: NPN IC Continuous (A): 0.07 VCEO(sus) Min (V): 10 hFE Min: 90 hFE Max: 180 PTM Max (W): 0.2 fT Min (MHz): 7000 NF Typ. (dB): 1 |S21e| 2 Typ. (dB): 12 Package Type: SC-59-3 / CP-3 MSL Type: 1 MSL Temp (°C): 260 ON Target: N Reference Price: $0.0849

ID: NonemA Ptot: NonemW Cdss: 1.1pF Cg1ss: 2.1pF F: 1.8dB Gp: 20.0dB Package: SOT143 gfs: 24.0mS Maximum Drain-source voltage Vds: 12.0V Maximum Continuous Drain current ID: 30.0mA Forward transconductance gfs: 24.0mS Gate input capacitance Cg1ss: 2.1pF Output capacitance Cdss: 1.1pF Noise figure F: 1.80 dB @800 MHz Power gain Gp: 20 dB @800 MHz

ID: NonemA Ptot: NonemW Cdss: 1.0pF Cg1ss: 2.5pF F: 1.0dB Gp: 25.0dB Package: SOT23 gfs: 16.0mS Maximum Continuous Drain current ID: 30.0mA Maximum Drain-source voltage Vds: 20.0V Forward transconductance gfs: 16.0mS Gate input capacitance Cg1ss: 2.5pF Output capacitance Cdss: 0.9pF Noise figure F: 2.10 dB @45 MHz Power gain Gp: 27 dB @45 MHz

Ptot: NonemW VS: NoneV Vdrop: 0.65V ID (multiple): 10 mA Supply Voltage: NoneV Output Current: NonemA

V[DRM]/ V[RRM (V)]: 5200.0V I[TSM]: 100000.0A I[TAVM]: 3880 (180 ° el sin) Configuration: Electrical Triggered Phase Control Thyristor Housing: Disc dia 172mm height 35mm / Ceramic V[DRM] / V[RRM] [V]: 5200.0 I[TAVM]/T[C] [A/°C](@180° el sin): 3880/85 I[TSM] [A](@10ms, Tvj max): 100000.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 50000.0 V[T]/I[T] [V/kA](@Tvj max): 1.80/6.0 V[T0] [V](@T[vj max]) max: 0.93 r[T] [mΩ](@T[vj max]) max: 0.145 t[q] [µs]: 550.0 R[thJC] [K/kW](@180° el sin) max: 4.5 T[vj] [°C] max: 125.0 Clamping force [kn] max: 130.0

V[DRM]/ V[RRM (V)]: 2200.0V I[TSM]: 91000.0A I[TAVM]: 4340 (180 ° el sin) Configuration: Electrical Triggered Phase Control Thyristor Housing: Disc dia 150mm height 26mm / Ceramic V[DRM] / V[RRM] [V]: 2200.0 I[TAVM]/T[C] [A/°C](@180° el sin): 4340/85 I[TSM] [A](@10ms, Tvj max): 91000.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 41400.0 V[T]/I[T] [V/kA](@Tvj max): 1.20/4.0 V[T0] [V](@T[vj max]) max: 0.77 r[T] [mΩ](@T[vj max]) max: 0.107 t[q] [µs]: 250.0 R[thJC] [K/kW](@180° el sin) max: 4.8 T[vj] [°C] max: 125.0 Clamping force [kn] max: 91.0

V[DRM]/ V[RRM (V)]: 8000.0V I[TSM]: 90000.0A I[TAVM]: 2300 (180 ° el sin) Configuration: Light Triggered Phase Control Thyristor Housing: Disc dia 172mm height 40mm / Ceramic V[DRM] / V[RRM] [V]: 8000.0 I[TAVM]/T[C] [A/°C](@180° el sin): 2300/85 I[TSM] [A](@10ms, Tvj max): 90000.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 40500.0 V[T]/I[T] [V/kA](@Tvj max): 2.95/5.0 V[T0] [V](@T[vj max]) max: 1.2 r[T] [mΩ](@T[vj max]) max: 0.35 t[q] [µs]: 550.0 R[thJC] [K/kW](@180° el sin) max: 4.8 T[vj] [°C] max: 120.0 Clamping force [kn] max: 130.0

V[DRM]/ V[RRM (V)]: 8000.0V I[TSM]: 90000.0A I[TAVM]: 2620 (180 ° el sin) Configuration: Electrical Triggered Phase Control Thyristor Housing: Disc dia 172mm height 35mm / Ceramic V[DRM] / V[RRM] [V]: 8000.0 I[TAVM]/T[C] [A/°C](@180° el sin): 2620/85 I[TSM] [A](@10ms, Tvj max): 90000.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 40500.0 V[T]/I[T] [V/kA](@Tvj max): 2.95/5.0 V[T0] [V](@T[vj max]) max: 1.27 r[T] [mΩ](@T[vj max]) max: 0.336 t[q] [µs]: 550.0 R[thJC] [K/kW](@180° el sin) max: 4.5 T[vj] [°C] max: 125.0 Clamping force [kn] max: 130.0