BSZ180P03NS3G
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs.
I[Dpuls] max: -158.0A
R[th]: 3.1K/W
P[tot] max: 40.0W
V[DS] max: -30.0V
C[iss]: 1480.0pF
C[oss]: 744.0pF
R[DS (on)](@10V) max: 18.0mΩ
Package: PQFN 3.3 x 3.3
I[D ](@25°C) max: 39.6A
Q[G](typ @10V): 20.0nC
V[GS(th)]: -2.5V
Polarity: P
Operating Temperature min: -55.0°C
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.18
IRF9317
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package
Package: SO-8
Q[gd]: 14.0nC
Moisture Sensitivity Level: 1
Mounting: SMD
Polarity: P
P[tot](@ T[A]=25°C) max: 2.5W
R[thJA] max: 50.0K/W
T[j] max: 150.0°C
V[DS] max: -30.0V
V[GS] max: 20.0V
R[DS (on)](@10V) max: 6.6mΩ
R[DS (on)](@4.5V) max: 10.2mΩ
V[GS(th)]: -1.8V
I[D ](@25°C) max: -16.0A
Q[G](typ @4.5V): 31.0nC
Budgetary Price €/1k: 0.25
IRF9321
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package
Mounting: SMD
P[tot](@ T[A]=25°C) max: 2.5W
R[thJA] max: 50.0K/W
V[DS] max: -30.0V
Moisture Sensitivity Level: 1
Package: SO-8
Polarity: P
Q[gd]: 16.0nC
T[j] max: 150.0°C
V[GS] max: 20.0V
R[DS (on)](@10V) max: 7.2mΩ
R[DS (on)](@4.5V) max: 11.2mΩ
V[GS(th)]: -1.8V
I[D ](@25°C) max: -15.0A
Q[G](typ @4.5V): 34.0nC
Budgetary Price €/1k: 0.23
Mounting: SMD
P[tot](@ T[A]=25°C) max: 2.5W
R[thJA] max: 50.0K/W
V[DS] max: -30.0V
Moisture Sensitivity Level: 1
Package: SO-8
Polarity: P
Q[gd]: 22.0nC
T[j] max: 150.0°C
V[GS] max: 20.0V
R[DS (on)](@10V) max: 20.0mΩ
R[DS (on)](@4.5V) max: 35.0mΩ
V[GS(th)]: -1.52V
Q[G](typ @10V): 61.0nC
I[D ](@25°C) max: -10.0A
Budgetary Price €/1k: 0.27
BSO301SPH
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs.
I[Dpuls] max: -60.0A
R[th]: 110.0K/W
P[tot] max: 1.79W
V[DS] max: -30.0V
Package: SO-8
C[iss]: 4430.0pF
C[oss]: 1180.0pF
Q[G](typ @10V): -102.0nC
R[DS (on)](@10V) max: 8.0mΩ
V[GS(th)]: -1.5V
I[D ](@25°C) max: 14.9A
Polarity: P
Operating Temperature min: -55.0°C
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.58
Moisture Sensitivity Level: 1
Mounting: SMD
Package: SO-8
Ptot(@ TA=25°C): NoneW
RthJA: NoneK/W
Tj: None°C
VDS: NoneV
VGS: NoneV
Polarity: P
Qgd: 12.0nC
RDS (on)(@10V): NonemΩ
RDS (on)(@4.5V): NonemΩ
VGS(th): -1.75V
QG(typ @10V): 75.0nC
ID (@25°C): NoneA
Budgetary Price €/1k: 0.36
Moisture Sensitivity Level: 1
Package: SO-8
Polarity: P
Q[gd]: 7.5nC
R[thJA] max: 50.0K/W
T[j] max: 150.0°C
V[GS] max: 20.0V
P[tot](@ T[A]=25°C) max: 2.5W
V[DS] max: -30.0V
Mounting: SMD
R[DS (on)](@10V) max: 70.0mΩ
R[DS (on)](@4.5V) max: 130.0mΩ
V[GS(th)]: -2.0V
Q[G](typ @10V): 27.0nC
I[D ](@25°C) max: -4.6A
Budgetary Price €/1k: 0.17
SI4435DY
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package
Tj: None°C
VGS: NoneV
Moisture Sensitivity Level: 1
Package: SO-8
Polarity: P
Qgd: 8.0nC
Mounting: SMD
Ptot(@ TA=25°C): NoneW
RthJA: NoneK/W
VDS: NoneV
RDS (on)(@10V): NonemΩ
RDS (on)(@4.5V): NonemΩ
VGS(th): NoneV
QG(typ @10V): 40.0nC
ID (@25°C): NoneA
Budgetary Price €/1k: 0.25
IRF9310
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package
Moisture Sensitivity Level: 1
Package: SO-8
Polarity: P
Q[gd]: 28.0nC
T[j] max: 150.0°C
V[GS] max: 20.0V
Mounting: SMD
P[tot](@ T[A]=25°C) max: 2.5W
R[thJA] max: 50.0K/W
V[DS] max: -30.0V
R[DS (on)](@10V) max: 4.6mΩ
R[DS (on)](@4.5V) max: 6.8mΩ
V[GS(th)]: -1.8V
I[D ](@25°C) max: -20.0A
Q[G](typ @4.5V): 58.0nC
Budgetary Price €/1k: 0.39
IRF9388
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: -30V P-Channel StrongIRFET™ Power MOSFET in a SO-8 package
Mounting: SMD
P[tot](@ T[A]=25°C) max: 2.5W
Moisture Sensitivity Level: 1
Package: SO-8
Polarity: P
Q[gd]: 8.5nC
R[thJA] max: 50.0K/W
T[j] max: 150.0°C
V[DS] max: -30.0V
V[GS] max: 25.0V
R[DS (on)](@10V) max: 11.9mΩ
V[GS(th)]: -1.8V
I[D ](@25°C) max: -12.0A
Q[G](typ @4.5V): 18.0nC
Budgetary Price €/1k: 0.21