I[Dpuls] max: 80.0A
R[thJC] max: 4.9K/W
R[th]: 4.9K/W
P[tot] max: 26.0W
V[DS] max: 30.0V
Q[G](typ @4.5V): 4.8nC
Polarity: N+N
C[iss]: 850.0pF
C[oss]: 350.0pF
Q[G](typ @10V): 10.0nC
R[DS (on)](@10V) max: 15.0mΩ
R[DS (on)](@4.5V) max: 22.0mΩ
R[DS (on)](@4.5V LL) max: 22.0mΩ
Package: SuperSO8 5x6
I[D ](@25°C) max: 20.0A
V[GS(th)]: 1.74V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.28
IRF2204
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 40V Single N-Channel Power MOSFET in a TO-220 package
Mounting: THT
Package: TO-220
Polarity: N
Qgd: 39.0nC
RthJC: NoneK/W
Tj: None°C
VDS: NoneV
Ptot: NoneW
VGS: NoneV
RDS (on)(@10V): NonemΩ
VGS(th): 3.0V
QG(typ @10V): 130.0nC
ID (@25°C): NoneA
Operating Temperature: None°C
Budgetary Price €/1k: 0.83
IRFH5301
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 30V Single N-Channel StrongIRFET™ Power MOSFET in a PQFN 5X6 package
Moisture Sensitivity Level: 1
Polarity: N
P[tot] max: 110.0W
Q[gd]: 12.0nC
R[thJC] max: 1.1K/W
V[DS] max: 30.0V
V[GS] max: 20.0V
Mounting: SMD
P[tot](@ T[A]=25°C) max: 3.6W
T[j] max: 150.0°C
R[DS (on)](@10V) max: 1.85mΩ
R[DS (on)](@4.5V) max: 2.9mΩ
V[GS(th)]: 1.8V
I[D ](@25°C) max: 100.0A
Q[G](typ @4.5V): 37.0nC
Package: SuperSO8 5x6
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.43
IRLB3813
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 30V Logic Level Single N-Channel StrongIRFET™ Power MOSFET in a TO-220 package
Mounting: THT
Polarity: N
P[tot] max: 230.0W
Q[gd]: 19.0nC
R[thJC] max: 0.64K/W
T[j] max: 175.0°C
V[DS] max: 30.0V
Package: TO-220
V[GS] max: 20.0V
R[DS (on)](@10V) max: 1.95mΩ
R[DS (on)](@4.5V) max: 2.6mΩ
V[GS(th)]: 1.9V
I[D ](@25°C) max: 260.0A
Q[G](typ @4.5V): 57.0nC
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.66
I[Dpuls] max: 400.0A
V[GS(th)] max: 4.0V
R[th]: 1.6K/W
P[tot] max: 94.0W
V[DS] max: 40.0V
Q[G](typ @10V): 42.0nC
Package: TO-220
Polarity: N
C[iss]: 3400.0pF
C[oss]: 980.0pF
R[DS (on)](@10V) max: 4.1mΩ
I[D ](@25°C) max: 80.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.41
IRF1404Z
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 40V Single N-Channel Power MOSFET in a TO-220 package
Package: TO-220
Polarity: N
P[tot] max: 220.0W
Q[gd]: 42.0nC
R[thJC] max: 0.65K/W
T[j] max: 175.0°C
V[DS] max: 40.0V
V[GS] max: 20.0V
Mounting: THT
R[DS (on)](@10V) max: 3.7mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 100.0nC
I[D ](@25°C) max: 180.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.58
IRFP7430
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 40V Single N-Channel StrongIRFET™ Power MOSFET in a TO-247 package
T[j] max: 175.0°C
V[GS] max: 20.0V
P[tot] max: 366.0W
Package: TO-247
Polarity: N
R[thJC] max: 0.41K/W
Mounting: THT
Q[gd]: 98.0nC
V[DS] max: 40.0V
R[DS (on)](@10V) max: 1.3mΩ
V[GS(th)]: 3.05V
Q[G](typ @10V): 300.0nC
I[D ](@25°C) max: 195.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.29
IRFH8324
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 30V Single N-Channel StrongIRFET™ Power MOSFET in a PQFN 5x6 package
Moisture Sensitivity Level: 1
Mounting: SMD
Polarity: N
P[tot] max: 54.0W
R[thJC] max: 2.3K/W
V[DS] max: 30.0V
V[GS] max: 20.0V
P[tot](@ T[A]=25°C) max: 3.6W
Q[gd]: 3.5nC
T[j] max: 150.0°C
R[DS (on)](@10V) max: 4.1mΩ
R[DS (on)](@4.5V) max: 6.3mΩ
V[GS(th)]: 1.8V
I[D ](@25°C) max: 90.0A
Q[G](typ @4.5V): 14.0nC
Package: SuperSO8 5x6
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.23
IPB020N08N5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: Industry leading power MOSFET technology for telecom and server applications with OptiMOS™ 5 80V in D2PAK package
I[Dpuls] max: 480.0A
Mounting: SMD
P[tot] max: 300.0W
Package: D2PAK (TO-263)
Pin Count: 3.0Pins
Polarity: N
Q[G](typ @10V): 133.0nC
R[th]: 0.5K/W
R[thJA] max: 62.0K/W
V[DS] max: 80.0V
C[iss]: 9300.0pF
C[oss]: 1500.0pF
R[DS (on)](@10V) max: 2.0mΩ
I[D ](@25°C) max: 173.0A
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.45
IPB019N08NF2S
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: StrongIRFET™ 2 single N-channel power MOSFET 80 V in D²PAK package
I[D ](@25°C) max: 166.0A
I[Dpuls] max: 664.0A
Operating Temperature max: 175.0°C
P[tot] max: 250.0W
Package: D2PAK (TO-263)
Polarity: N
Q[G](typ @10V): 124.0nC
R[DS (on)](@10V) max: 1.95mΩ
V[DS] max: 80.0V
V[GS(th)]: 3.0V
Battery voltage: 36-48 V
Budgetary Price €/1k: 1.25