IPD055N08NF2S
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: StrongIRFET™ 2 single N-channel power MOSFET 80 V in DPAK
I[D ](@25°C) max: 98.0A
I[D ] max: 98.0A
I[Dpuls] max: 392.0A
Mounting: SMD
Operating Temperature max: 175.0°C
P[tot] max: 107.0W
Package: DPAK (TO-252)
Pin Count: 3.0Pins
Polarity: N
Q[G](typ @10V): 36.0nC
Q[G]: 36.0nC
R[DS (on)](@10V) max: 5.5mΩ
V[DS] max: 80.0V
V[GS(th)]: 3.0V
Budgetary Price €/1k: 0.58
IPD028N06NF2S
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: StrongIRFET™ 2 single N-channel power MOSFET 60 V in DPAK package
I[D ](@25°C) max: 139.0A
I[Dpuls] max: 556.0A
Mounting: SMD
Operating Temperature max: 175.0°C
P[tot] max: 150.0W
Package: DPAK (TO-252)
Pin Count: 3.0Pins
Polarity: N
Q[G](typ @10V): 68.0nC
R[DS (on)](@10V) max: 2.85mΩ
V[DS] max: 60.0V
V[GS(th)]: 2.8V
Budgetary Price €/1k: 0.62
IRLR3636
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 60V Single N-Channel Power MOSFET in a D-Pak package
R[thJC] max: 1.05K/W
T[j] max: 175.0°C
V[DS] max: 60.0V
Moisture Sensitivity Level: 1
Mounting: SMD
Polarity: N
P[tot] max: 143.0W
Q[gd]: 15.0nC
Package: DPAK (TO-252)
V[GS] max: 16.0V
R[DS (on)](@10V) max: 6.8mΩ
R[DS (on)](@10V) max: 6.8mΩ
R[DS (on)](@4.5V) max: 8.3mΩ
R[DS (on)](@4.5V) max: 8.3mΩ
V[GS(th)]: 1.75V
V[GS(th)]: 1.75V
I[D ](@25°C) max: 99.0A
I[D ](@25°C) max: 99.0A
Q[G](typ @4.5V): 33.0nC
Q[G](typ @4.5V): 33.0nC
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Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.48
Budgetary Price €/1k: 0.48
IPB024N08NF2S
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: StrongIRFET™ 2 single N-channel power MOSFET 80 V in D²PAK package
I[D ](@25°C) max: 107.0A
I[Dpuls] max: 428.0A
Operating Temperature max: 175.0°C
P[tot] max: 150.0W
Package: D2PAK (TO-263)
Polarity: N
Q[G](typ @10V): 89.0nC
R[DS (on)](@10V) max: 2.4mΩ
V[DS] max: 80.0V
V[GS(th)]: 3.0V
Battery voltage: 36-48 V
Budgetary Price €/1k: 1.14
I[Dpuls] max: 400.0A
R[th]: 1.1K/W
P[tot] max: 136.0W
V[DS] max: 60.0V
Q[G](typ @10V): 56.0nC
Package: I2PAK (TO-262)
Polarity: N
C[iss]: 4100.0pF
C[oss]: 980.0pF
R[DS (on)](@10V) max: 2.9mΩ
I[D ](@25°C) max: 136.0A
V[GS(th)]: 2.8V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.69
IPB031N08N5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: Industry leading power MOSFET technology for telecom and server applications with OptiMOS™ 5 80V in D2PAK package
I[Dpuls] max: 480.0A
Mounting: SMD
P[tot] max: 167.0W
Package: D2PAK (TO-263)
Pin Count: 3.0Pins
Polarity: N
Q[G](typ @10V): 69.0nC
R[th]: 0.9K/W
R[thJA] max: 62.0K/W
V[DS] max: 80.0V
C[iss]: 4800.0pF
C[oss]: 790.0pF
R[DS (on)](@10V) max: 3.1mΩ
I[D ](@25°C) max: 120.0A
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.0
IRL80HS120
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: New logic level MOSFETs for low VGS
I[D ](@25°C) max: 12.5A
I[Dpuls] max: 41.0A
Mounting: SMD
P[tot] max: 11.5W
Polarity: N
Q[gd]: 1.8nC
R[th]: 13.0K/W
R[thJA] max: 60.0K/W
R[thJC] max: 13.0K/W
V[DS] max: 80.0V
R[DS (on)](@10V) max: 32.0mΩ
R[DS (on)](@4.5V) max: 42.0mΩ
R[DS (on)](@4.5V LL) max: 42.0mΩ
Q[G](typ @4.5V): 4.7nC
V[GS(th)]: 1.7V
Operating Temperature max: 175.0°C
Package: PQFN 2 x 2 (DFN2020)
Budgetary Price €/1k: 0.25
BSZ110N08NS5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 power MOSFET 80V for telecom applications
R[th]: 2.5K/W
V[DS] max: 80.0V
P[tot] max: 50.0W
I[Dpuls] max: 160.0A
Q[G](typ @10V): 15.0nC
R[thJC] max: 2.5K/W
R[thJA] max: 60.0K/W
Pin Count: 8.0Pins
Polarity: N
Mounting: SMD
C[iss]: 1000.0pF
C[oss]: 180.0pF
R[DS (on)](@10V) max: 11.0mΩ
Package: PQFN 3.3 x 3.3
I[D ](@25°C) max: 40.0A
V[GS(th)]: 3.0V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.29
IRL60HS118
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: New logic level MOSFETs for low VGS
I[D ](@25°C) max: 18.5A
I[Dpuls] max: 56.0A
Mounting: SMD
P[tot] max: 11.5W
Polarity: N
Q[gd]: 2.1nC
R[th]: 13.0K/W
R[thJA] max: 60.0K/W
R[thJC] max: 13.0K/W
V[DS] max: 60.0V
R[DS (on)](@10V) max: 17.0mΩ
R[DS (on)](@4.5V) max: 23.5mΩ
R[DS (on)](@4.5V LL) max: 23.5mΩ
Q[G](typ @4.5V): 5.3nC
V[GS(th)]: 1.7V
Operating Temperature max: 175.0°C
Package: PQFN 2 x 2 (DFN2020)
Budgetary Price €/1k: 0.3
BSZ070N08LS5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 power MOSFETs logic level provide low RDS(on) in a small package
I[Dpuls] max: 160.0A
Mounting: SMD
P[tot] max: 69.0W
Pin Count: 8.0Pins
Polarity: N
Q[G](typ @4.5V): 14.1nC
Q[gd]: 5.0nC
R[th] max: 1.8K/W
R[thJA] max: 62.0K/W
R[thJC] max: 1.8K/W
V[DS] max: 80.0V
C[iss]: 1800.0pF
C[oss]: 280.0pF
R[DS (on)](@10V) max: 7.0mΩ
R[DS (on)](@4.5V) max: 9.4mΩ
R[DS (on)](@4.5V LL) max: 9.4mΩ
Package: PQFN 3.3 x 3.3
I[D ](@25°C) max: 40.0A
V[GS(th)]: 1.7V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.43