IPB029N06NF2S
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: StrongIRFET™ 2 single N-channel power MOSFET 60 V in D²PAK package
I[D ](@25°C) max: 120.0A
I[D ] max: 120.0A
I[Dpuls] max: 480.0A
Mounting: SMD
Operating Temperature max: 175.0°C
P[tot] max: 150.0W
Package: D2PAK (TO-263)
Polarity: N
Q[G](typ @10V): 68.0nC
Q[G]: 68.0nC
R[DS (on)](@10V) max: 2.9mΩ
V[DS] max: 60.0V
V[GS(th)]: 2.8V
Battery voltage: 24-66 V
Budgetary Price €/1k: 0.75
V[DS] max: 60.0V
P[tot] max: 36.0W
I[Dpuls] max: 160.0A
Q[G](typ @10V): 12.0nC
R[th]: 3.5K/W
R[thJC] max: 3.5K/W
R[thJA] max: 60.0K/W
Pin Count: 8.0Pins
Polarity: N
Mounting: SMD
C[iss]: 860.0pF
C[oss]: 210.0pF
R[DS (on)](@10V) max: 10.0mΩ
Package: PQFN 3.3 x 3.3
I[D ](@25°C) max: 40.0A
V[GS(th)]: 2.8V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.22
BSZ075N08NS5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: Industry leading power MOSFET technology for telecom and server applications with OptiMOS™ 5 80V in S3O8 package
R[th]: 1.8K/W
V[DS] max: 80.0V
P[tot] max: 69.0W
I[Dpuls] max: 292.0A
Q[G](typ @10V): 24.0nC
R[thJC] max: 1.8K/W
R[thJA] max: 60.0K/W
Pin Count: 8.0Pins
Polarity: N
Mounting: SMD
C[iss]: 1600.0pF
C[oss]: 280.0pF
R[DS (on)](@10V) max: 7.5mΩ
Package: PQFN 3.3 x 3.3
I[D ](@25°C) max: 73.0A
V[GS(th)]: 3.0V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.38
I[Dpuls] max: 392.0A
R[th]: 1.8K/W
P[tot] max: 69.0W
V[DS] max: 60.0V
Q[G](typ @10V): 27.0nC
Polarity: N
C[iss]: 2000.0pF
C[oss]: 490.0pF
R[DS (on)](@10V) max: 4.2mΩ
Package: PQFN 3.3 x 3.3
I[D ](@25°C) max: 98.0A
V[GS(th)]: 2.8V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.5
BSZ099N06LS5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 power MOSFETs logic level provide low RDS(on) in a small package
I[Dpuls] max: 184.0A
Mounting: SMD
P[tot] max: 36.0W
Pin Count: 8.0Pins
Polarity: N
Q[G](typ @4.5V): 6.9nC
Q[gd]: 2.0nC
R[th] max: 3.5K/W
R[thJA] max: 60.0K/W
R[thJC] max: 3.5K/W
V[DS] max: 60.0V
C[iss]: 1000.0pF
C[oss]: 210.0pF
R[DS (on)](@10V) max: 9.9mΩ
R[DS (on)](@4.5V) max: 14.0mΩ
R[DS (on)](@4.5V LL) max: 14.0mΩ
Package: PQFN 3.3 x 3.3
I[D ](@25°C) max: 46.0A
V[GS(th)]: 1.7V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.25
IQE050N08NM5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ low-voltage power MOSFET 80 V in PQFN 3.3x3.3 Source-Down package with industry leading RDS(on) and superior thermal performance
I[D ](@25°C) max: 101.0A
Package: PQFN 3.3x3.3 Source-Down
Polarity: N
Q[G](typ @10V): 34.6nC
R[DS (on)](@10V) max: 5.0mΩ
V[DS] max: 80.0V
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.94
ISZ034N06LM5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: Performance improvements with best-in-class OptiMOS™ 5 power MOSFET 60V in high performance PQFN 3.3x3.3mm package
I[D ](@25°C) max: 112.0A
Package: PQFN 3.3 x 3.3 Fused Lead
Polarity: N
Q[G](typ @4.5V): 20.0nC
Q[G](typ @10V): 40.0nC
R[DS (on)](@10V) max: 3.4mΩ
R[DS (on)](@4.5V) max: 4.2mΩ
V[DS] max: 60.0V
V[GS(th)]: 1.7V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.64
I[Dpuls] max: 360.0A
R[th]: 0.9K/W
P[tot] max: 167.0W
V[DS] max: 60.0V
Q[G](typ @10V): 71.0nC
Package: DPAK (TO-252)
Polarity: N
C[iss]: 5200.0pF
C[oss]: 1200.0pF
R[DS (on)](@10V) max: 2.5mΩ
I[D ](@25°C) max: 90.0A
V[GS(th)]: 2.8V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.78
IQE022N06LM5CG
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 power MOSFET 60 V logic level in PQFN 3.3x3.3 Source-Down Center-Gate package
I[D ](@25°C) max: 151.0A
I[Dpuls] max: 604.0A
Operating Temperature max: 175.0°C
P[tot] max: 100.0W
Package: PQFN 3.3x3.3 Source-Down
Polarity: N
Q[G](typ @4.5V): 26.0nC
Q[G](typ @10V): 53.0nC
R[DS (on)](@10V) max: 2.2mΩ
R[DS (on)](@4.5V) max: 2.9mΩ
V[DS] max: 60.0V
V[GS(th)]: 1.7V
Special Features: Center-Gate
Budgetary Price €/1k: 1.01
I[Dpuls] max: 120.0A
R[th]: 4.2K/W
P[tot] max: 36.0W
V[DS] max: 60.0V
Q[G](typ @4.5V): 7.0nC
Package: DPAK (TO-252)
Polarity: N
C[iss]: 1200.0pF
C[oss]: 270.0pF
R[DS (on)](@10V) max: 22.0mΩ
R[DS (on)](@4.5V) max: 39.8mΩ
R[DS (on)](@4.5V LL) max: 39.8mΩ
I[D ](@25°C) max: 30.0A
V[GS(th)]: 1.7V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.21