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BSL202SN

数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: N-Channel Small Signal MOSFET 20 V in TSOP-6 package

VDS: NoneV Ptot: NoneW IDpuls: NoneA VGS(th): NoneV Pin Count: 6.0Pins Package: TSOP-6 Polarity: N Mounting: SMD Ciss: 863.0pF Coss: 278.0pF RDS (on): NonemΩ RDS (on)(@2.5V): NonemΩ RDS (on)(@4.5V): NonemΩ RDS (on)(@4.5V LL): NonemΩ Special Features: Small Power ID (@25°C): NoneA QG(typ @4.5V): NonenC Operating Temperature: None°C Budgetary Price €/1k: 0.16

ISP12DP06NM

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分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: P-channel MOSFET in normal and logic level, reducing design complexity in medium and low power applications

ID (@25°C): NoneA IDpuls: NoneA Operating Temperature: None°C Ptot: NoneW Package: SOT-223 Polarity: P QG(typ @10V): -20.2nC RDS (on)(@10V): NonemΩ VDS: NoneV VGS(th): NoneV Special Features: Small Signal Budgetary Price €/1k: 0.29

BSP316P

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分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: P-channel enhancement mode Field-Effect Transistor (FET), -100 V, SOT-223

IDpuls: NoneA VGS(th): NoneV Rth: 115.0K/W Ptot: NoneW VDS: NoneV Package: SOT-223 Polarity: P Mounting: SMD Mode: Enhancement Ciss: 117.0pF Coss: 27.7pF Special Features: Small Power QG(typ @10V): -5.1nC RDS (on)(@10V): NonemΩ ID (@25°C): NoneA Operating Temperature: None°C Budgetary Price €/1k: 0.23

BSS806NE

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分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: N-Channel Small Signal MOSFET 20 V in SOT-23 package

VDS: NoneV Ptot: NoneW IDpuls: NoneA VGS(th): NoneV Rth: 250.0K/W RthJA: NoneK/W Pin Count: 3.0Pins Package: SOT-23 Polarity: N Mounting: SMD Mode: Enhancement Ciss: 370.0pF Coss: 118.0pF RDS (on): NonemΩ RDS (on)(@1.8V): NonemΩ RDS (on)(@2.5V): NonemΩ ID (@25°C): NoneA QG(typ @4.5V): NonenC Operating Temperature: None°C Special Features: ESD protected 更多

VGS(th): 0.55V Budgetary Price €/1k: 0.05

IRLML2030

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分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 30V Single N-Channel StrongIRFET™ Power MOSFET in a SOT-23 package

Moisture Sensitivity Level: 1 Package: SOT-23 Polarity: N Qgd: 0.34nC Tj: None°C VGS: NoneV Mounting: SMD Ptot(@ TA=25°C): NoneW RthJA: NoneK/W VDS: NoneV RDS (on)(@10V): NonemΩ RDS (on)(@4.5V): NonemΩ VGS(th): 1.7V ID (@25°C): NoneA QG(typ @4.5V): 1.0nC Special Features: Small Power Operating Temperature: None°C Budgetary Price €/1k: 0.06

BSS138I

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分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: N-channel enhancement mode small signal transistor for industrial and consumer applications in SOT-23-3 package

ID (@25°C): NoneA IDpuls: NoneA Mounting: SMT Operating Temperature: None°C Ptot: NoneW Package: SOT-23 Pin Count: 3.0Pins Polarity: N QG(typ @10V): 1.0nC RDS (on)(@10V): NonemΩ RDS (on)(@4.5V): NonemΩ Special Features: Small Signal VDS: NoneV VGS(th): 1.0V Budgetary Price €/1k: 0.03

BSP315P

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分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: P-channel enhancement mode Field-Effect Transistor (FET), -100 V, SOT-223

IDpuls: NoneA VGS(th): NoneV Rth: 115.0K/W Ptot: NoneW VDS: NoneV Package: SOT-223 Polarity: P Mounting: SMD Mode: Enhancement Ciss: 130.0pF Coss: 40.0pF Special Features: Small Power QG(typ @10V): 5.2nC RDS (on)(@10V): NonemΩ ID (@25°C): NoneA Operating Temperature: None°C Budgetary Price €/1k: 0.23

BSP322P

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分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: P-channel enhancement mode Field-Effect Transistor (FET), -100 V, SOT-223

IDpuls: NoneA VGS(th): NoneV Rth: 115.0K/W Pin Count: 3.0Pins Ptot: NoneW VDS: NoneV Package: SOT-223 Polarity: P Mounting: SMD Mode: Enhancement Ciss: 280.0pF Coss: 70.0pF Special Features: Small Power QG(typ @10V): 12.4nC RDS (on)(@10V): NonemΩ ID (@25°C): NoneA Operating Temperature: None°C Budgetary Price €/1k: 0.23

BSS314PE

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分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: P-channel enhancement mode Field-Effect Transistor (FET), -30 V, SOT-23

IDpuls: NoneA VGS(th): NoneV Rth: 250.0K/W Ptot: NoneW VDS: NoneV Package: SOT-23 Ciss: 221.0pF Coss: 126.0pF QG(typ @10V): -2.9nC RDS (on)(@10V): NonemΩ Polarity: P ID (@25°C): NoneA Operating Temperature: None°C Operating Temperature: None°C Special Features: ESD protected VGS(th): -1.5V Budgetary Price €/1k: 0.05

BSS209PW

数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: P-channel enhancement mode small signal Field-Effect Transistor (FET), -100 V, SOT-223

IDpuls: NoneA VGS(th): NoneV Rth: 420.0K/W Ptot: NoneW VDS: NoneV Package: SOT-323 Ciss: 87.0pF Coss: 35.0pF Special Features: Small Signal RDS (on)(@4.5V): NonemΩ Polarity: P ID (@25°C): NoneA QG(typ @4.5V): NonenC Operating Temperature: None°C Operating Temperature: None°C Budgetary Price €/1k: 0.04