IRFTS9342


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: -30V Single P-Channel StrongIRFET™ Power MOSFET in a TSOP-6 (Micro 6) package

RthJA: NoneK/W VDS: NoneV Moisture Sensitivity Level: 1 Mounting: SMD Polarity: P Ptot(@ TA=25°C): NoneW Qgd: 3.1nC Tj: None°C VGS: NoneV ID (@25°C): NoneA Package: TSOP-6 VGS(th): NoneV RDS (on)(@10V): NonemΩ RDS (on)(@4.5V): NonemΩ QG(typ @4.5V): 12.0nC Special Features: Small Power Budgetary Price €/1k: 0.11

ISP14EP15LM


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ P-Channel MOSFET 150V in SOT-223

ID (@25°C): NoneA ID: NoneA IDpuls: NoneA Mounting: SMT Operating Temperature: None°C Ptot: NoneW Package: SOT-223 Pin Count: 4.0Pins Polarity: P QG(typ @4.5V): -6.0nC QG(typ @10V): -11.6nC QG: -11.6nC RDS (on)(@10V): NonemΩ RDS (on)(@4.5V): NonemΩ RDS (on): NonemΩ VDS: NoneV VGS(th): NoneV VGS(th): -1.5V Budgetary Price €/1k: 0.2

BSP89


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: N-Channel Small Signal MOSFET 240 V in SOT-223 package

IDpuls: NoneA VGS(th): NoneV RthJA: NoneK/W Pin Count: 4.0Pins Ptot: NoneW VDS: NoneV Package: SOT-223 Polarity: N Mounting: SMD Mode: Enhancement Ciss: 80.0pF Coss: 11.2pF Special Features: Small Power QG(typ @10V): 4.3nC RDS (on)(@10V): NonemΩ ID (@25°C): NoneA Operating Temperature: None°C Budgetary Price €/1k: 0.17

IRLML6246


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 20V Single N-Channel StrongIRFET™ Power MOSFET in a SOT-23 package

Qgd: 1.7nC RthJA: NoneK/W Tj: None°C VDS: NoneV Moisture Sensitivity Level: 1 Package: SOT-23 Polarity: N Ptot(@ TA=25°C): NoneW Mounting: SMD VGS: NoneV RDS (on)(@4.5V): NonemΩ VGS(th): 0.8V ID (@25°C): NoneA QG(typ @4.5V): 3.5nC Special Features: Small Power Operating Temperature: None°C Budgetary Price €/1k: 0.06

BSS670S2L


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: N-Channel Small Signal MOSFET 55 V in SOT-23 package

IDpuls: NoneA VGS(th): NoneV RthJA: NoneK/W Ptot: NoneW VDS: NoneV Package: SOT-23 Ciss: 56.0pF Coss: 13.0pF Special Features: Small Signal QG(typ @10V): 1.7nC RDS (on)(@10V): NonemΩ Polarity: N ID (@25°C): NoneA Operating Temperature: None°C Operating Temperature: None°C Budgetary Price €/1k: 0.04

BSD840N


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: Dual N-Channel Small Signal 20 V MOSFET in SOT363 package

IDpuls: NoneA VGS(th): NoneV RthJA: NoneK/W Ptot: NoneW VDS: NoneV Package: SOT-363 dual Ciss: 55.0pF Coss: 25.0pF RDS (on): NonemΩ RDS (on)(@1.8V): NonemΩ RDS (on)(@2.5V): NonemΩ ID (@25°C): NoneA QG(typ @4.5V): NonenC Operating Temperature: None°C Operating Temperature: None°C Polarity: N+N Special Features: Dual VGS(th): 0.55V Budgetary Price €/1k: 0.05

BSD223P


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: P-channel enhancement mode Field-Effect Transistor (FET), -20V, SOT-363

IDpuls: NoneA Mode: Enhancement Mounting: SMD Operating Temperature: None°C Ptot: NoneW Package: SOT-363 Pin Count: 6.0Pins QG: -0.5nC Rth: 500.0K/W VDS: NoneV VGS(th): NoneV Ciss: 45.0pF Coss: 21.0pF RDS (on)(@2.5V): NonemΩ RDS (on)(@4.5V): NonemΩ RDS (on)(@4.5V LL): NonemΩ ID (@25°C): NoneA Polarity: P+P Special Features: Dual VGS(th): NoneV
VGS(th): -0.9V Budgetary Price €/1k: 0.05

BSS606N


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: N-Channel Small Signal MOSFET 60 V in SOT-89 package

VDS: NoneV IDpuls: NoneA VGS(th): NoneV Rth: 10.0K/W RthJC: NoneK/W RthJA: NoneK/W Pin Count: 4.0Pins Ptot: NoneW Package: SOT-89 Polarity: N Mounting: SMD Mode: Enhancement Ciss: 494.0pF Coss: 131.0pF Special Features: Small Power RDS (on)(@10V): NonemΩ ID (@25°C): NoneA QG(typ @4.5V): NonenC Operating Temperature: None°C Budgetary Price €/1k: 0.13

IRLML6344


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 30V Single N-Channel StrongIRFET™ Power MOSFET in a SOT-23 package

Ptot(@ TA=25°C): NoneW Moisture Sensitivity Level: 1 Mounting: SMD Polarity: N Qgd: 2.4nC Tj: None°C VGS: NoneV Package: SOT-23 RthJA: NoneK/W VDS: NoneV RDS (on)(@4.5V): NonemΩ VGS(th): 0.8V ID (@25°C): NoneA QG(typ @4.5V): 6.8nC Special Features: Small Power Operating Temperature: None°C Budgetary Price €/1k: 0.07

BSS123N


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: N-Channel Small Signal MOSFET 100 V in SOT23 package

IDpuls: NoneA VGS(th): NoneV RthJA: NoneK/W Ptot: NoneW VDS: NoneV Package: SOT-23 Ciss: 15.7pF Coss: 3.4pF Special Features: Small Signal RDS (on)(@10V): NonemΩ Polarity: N ID (@25°C): NoneA QG(typ @10V): 0.9nC Operating Temperature: None°C Operating Temperature: None°C Budgetary Price €/1k: 0.04