FCA47N60F
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N 沟道 SuperFET® FRFET® MOSFET 600V, 47A, 73mΩ
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: TO-3PN
Type: High Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 600
RDS(on) Max @ VGS = 10 V (mΩ): 73
VGS Max (V): ±30
Vgs(th) Max (V): 5
ID Max (A): 47
PD Max (W): 417
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 210
更多
Ciss Typ (pF): 5900
Qgd Typ @ VGS = 4.5 V (nC): 110
Qrr Typ (nC): 2040
Coss Typ (pF): 3200
Crss Typ (pF): 250
Package Type: TO-3P-3L
MSL Type: NA
MSL Temp (°C): 0
ON Target: Yes
参考价格: $6.9558
FCA76N60N
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 功率 MOSFET，N 沟道，SUPREMOS®，FAST，600 V，76 A，36 mΩ，TO-3P
状态: 已停产
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: TO-3P-3
Type: High Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 600
RDS(on) Max @ VGS = 10 V (mΩ): 36
VGS Max (V): ±30
Vgs(th) Max (V): 4
ID Max (A): 76
PD Max (W): 543
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 218
更多
Ciss Typ (pF): 9310
Qgd Typ @ VGS = 4.5 V (nC): 66
Qrr Typ (nC): 16000
Coss Typ (pF): 370
Crss Typ (pF): 3.1
Package Type: TO-3P-3L
MSL Type: NA
MSL Temp (°C): 0
ON Target: No
参考价格: Price N/A
FCB070N65S3
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 功率 MOSFET，N 沟道，SUPERFET® III，Easy Drive，650 V，44 A，70 mΩ，D2PAK
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: D2PAK
Type: High Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 650
RDS(on) Max @ VGS = 10 V (mΩ): 70
VGS Max (V): ±30
Vgs(th) Max (V): 4.5
ID Max (A): 44
PD Max (W): 312
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 78
更多
Ciss Typ (pF): 3090
Qgd Typ @ VGS = 4.5 V (nC): 30
Qrr Typ (nC): 9200
Coss Typ (pF): 68
Crss Typ (pF): -
Package Type: D2PAK-3 / TO-263-2
MSL Type: 1
MSL Temp (°C): 245
ON Target: Yes
参考价格: $3.3087
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: D2PAK
Type: High Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 650
RDS(on) Max @ VGS = 10 V (mΩ): 99
VGS Max (V): 30
Vgs(th) Max (V): 4.5
ID Max (A): 30
PD Max (W): 227
RDS(on) Max @ VGS = 2.5 V (mΩ): ~NA~
RDS(on) Max @ VGS = 4.5 V (mΩ): ~NA~
Qg Typ @ VGS = 4.5 V (nC): ~NA~
Qg Typ @ VGS = 10 V (nC): 61
更多
Ciss Typ (pF): 2480
Qgd Typ @ VGS = 4.5 V (nC): ~NA~
Qrr Typ (nC): 8.4
Coss Typ (pF): 55
Crss Typ (pF): 8.5
Package Type: D2PAK-3 / TO-263-2
MSL Type: 1
MSL Temp (°C): 245
ON Target: Yes
参考价格: $2.7034
FCB110N65F
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 功率 MOSFET，N 沟道，SUPERFET® II，FRFET®，650 V，35 A，110 mΩ，D2-PAK
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: D2PAK
Type: High Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 650
RDS(on) Max @ VGS = 10 V (mΩ): 110
VGS Max (V): DC: ±20, AC: ±30
Vgs(th) Max (V): 5
ID Max (A): 35
PD Max (W): 357
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 98
更多
Ciss Typ (pF): 3680
Qgd Typ @ VGS = 4.5 V (nC): 43
Qrr Typ (nC): 670
Coss Typ (pF): 110
Crss Typ (pF): 0.65
Package Type: D2PAK-3 / TO-263-2
MSL Type: 1
MSL Temp (°C): 245
ON Target: Yes
参考价格: $3.286
FCB11N60TM
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 功率 MOSFET，N 沟道，SUPERFET®，Easy Drive，600 V，11 A，380 mΩ，D2PAK
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: D2PAK
Type: High Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 600
RDS(on) Max @ VGS = 10 V (mΩ): 380
VGS Max (V): ±30
Vgs(th) Max (V): 5
ID Max (A): 11
PD Max (W): 125
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 40
更多
Ciss Typ (pF): 1148
Qgd Typ @ VGS = 4.5 V (nC): 21
Qrr Typ (nC): 5700
Coss Typ (pF): 671
Crss Typ (pF): 63
Package Type: D2PAK-3 / TO-263-2
MSL Type: 1
MSL Temp (°C): 245
ON Target: Yes
参考价格: $1.6117
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: D2PAK
Type: High Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 650
RDS(on) Max @ VGS = 10 V (mΩ): 125
VGS Max (V): 30
Vgs(th) Max (V): 4.5
ID Max (A): 24
PD Max (W): 181
RDS(on) Max @ VGS = 2.5 V (mΩ): ~NA~
RDS(on) Max @ VGS = 4.5 V (mΩ): ~NA~
Qg Typ @ VGS = 4.5 V (nC): ~NA~
Qg Typ @ VGS = 10 V (nC): 46
更多
Ciss Typ (pF): 1940
Qgd Typ @ VGS = 4.5 V (nC): ~NA~
Qrr Typ (nC): 5.7
Coss Typ (pF): 40
Crss Typ (pF): 5.5
Package Type: D2PAK-3 / TO-263-2
MSL Type: 1
MSL Temp (°C): 245
ON Target: Yes
参考价格: $2.3452
FCB199N65S3
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 功率 MOSFET，N 沟道，SUPERFET® III，Easy Drive，650 V，14 A，199 mΩ，D2PAK
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: D2PAK
Type: High Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 650
RDS(on) Max @ VGS = 10 V (mΩ): 199
VGS Max (V): ±30
Vgs(th) Max (V): 4.5
ID Max (A): 14
PD Max (W): 98
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 30
更多
Ciss Typ (pF): 1225
Qgd Typ @ VGS = 4.5 V (nC): 13
Qrr Typ (nC): 3500
Coss Typ (pF): 30
Crss Typ (pF): -
Package Type: D2PAK-3 / TO-263-2
MSL Type: 1
MSL Temp (°C): 245
ON Target: Yes
参考价格: $1.7343
FCB20N60TM
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 功率 MOSFET，N 沟道，SUPERFET®，Easy Drive，600 V，20 A，190 mΩ，D2PAK
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: D2PAK
Type: High Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 600
RDS(on) Max @ VGS = 10 V (mΩ): 190
VGS Max (V): -
Vgs(th) Max (V): -
ID Max (A): 20
PD Max (W): 208
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 75
更多
Ciss Typ (pF): -
Qgd Typ @ VGS = 4.5 V (nC): 36
Qrr Typ (nC): 1100
Coss Typ (pF): 1280
Crss Typ (pF): 95
Package Type: D2PAK-3 / TO-263-2
MSL Type: 1
MSL Temp (°C): 245
ON Target: No
参考价格: $2.6572
FCB20N60FTM
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 功率 MOSFET，N 沟道，SUPERFET®，FRFET®，600 V，20 A，190 mΩ，D2PAK
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: D2PAK
Type: High Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 600
RDS(on) Max @ VGS = 10 V (mΩ): 190
VGS Max (V): ±30
Vgs(th) Max (V): 5
ID Max (A): 20
PD Max (W): 208
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 75
更多
Ciss Typ (pF): 2370
Qgd Typ @ VGS = 4.5 V (nC): 36
Qrr Typ (nC): 1100
Coss Typ (pF): 1280
Crss Typ (pF): 95
Package Type: D2PAK-3 / TO-263-2
MSL Type: 1
MSL Temp (°C): 245
ON Target: No
参考价格: $2.6183