FCB20N60F-F085
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N 沟道 MOSFET 600V，20A，190mΩ，
状态: 已停产
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: NA
Type: High Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 600
RDS(on) Max @ VGS = 10 V (mΩ): 190
VGS Max (V): ±30
Vgs(th) Max (V): 5
ID Max (A): 20
PD Max (W): 405
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 78
更多
Ciss Typ (pF): 2305
Qgd Typ @ VGS = 4.5 V (nC): 41.5
Qrr Typ (nC): 1285
Coss Typ (pF): 1310
Crss Typ (pF): 105
Package Type: D2PAK-3 / TO-263-2
MSL Type: 1
MSL Temp (°C): 245
ON Target: No
参考价格: Price N/A
FCB20N60-F085
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 600 V、20 A、173 mΩ、D2PAKN 沟道 SuperFET™
状态: 已停产
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: NA
Type: High Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 600
RDS(on) Max @ VGS = 10 V (mΩ): 198
VGS Max (V): ±30
Vgs(th) Max (V): 5
ID Max (A): 20
PD Max (W): 341
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 72
更多
Ciss Typ (pF): 2710
Qgd Typ @ VGS = 4.5 V (nC): 31
Qrr Typ (nC): 10000
Coss Typ (pF): 1350
Crss Typ (pF): 68
Package Type: D2PAK-3 / TO-263-2
MSL Type: 1
MSL Temp (°C): 245
ON Target: No
参考价格: Price N/A
FCB260N65S3
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 功率 MOSFET，N 沟道，SUPERFET® III，Easy Drive，650 V，12 A，260 mΩ，D2PAK
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: D2PAK
Type: High Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 650
RDS(on) Max @ VGS = 10 V (mΩ): 260
VGS Max (V): ±30
Vgs(th) Max (V): 4.5
ID Max (A): 12
PD Max (W): 90
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 24
更多
Ciss Typ (pF): 1010
Qgd Typ @ VGS = 4.5 V (nC): 9.7
Qrr Typ (nC): 3400
Coss Typ (pF): 25
Crss Typ (pF): -
Package Type: D2PAK-3 / TO-263-2
MSL Type: 1
MSL Temp (°C): 245
ON Target: Yes
参考价格: $1.5689
FCB290N80
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N 沟道 SuperFET® II MOSFET
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: D2PAK
Type: High Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 800
RDS(on) Max @ VGS = 10 V (mΩ): 290
VGS Max (V): DC: ±20, AC: ±30
Vgs(th) Max (V): 4.5
ID Max (A): 17
PD Max (W): 212
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 58
更多
Ciss Typ (pF): 2410
Qgd Typ @ VGS = 4.5 V (nC): 22
Qrr Typ (nC): 12
Coss Typ (pF): 75
Crss Typ (pF): 0.36
Package Type: D2PAK-3 / TO-263-2
MSL Type: 1
MSL Temp (°C): 245
ON Target: Yes
参考价格: $3.1539
FCD1300N80Z
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 功率 MOSFET，N 沟道，SUPERFET® II，800 V，4 A，1.3 Ω，DPAK
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: DPAK
Type: High Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 800
RDS(on) Max @ VGS = 10 V (mΩ): 1300
VGS Max (V): DC: ±20, AC: ±30
Vgs(th) Max (V): 4.5
ID Max (A): 4
PD Max (W): 52
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 16.2
更多
Ciss Typ (pF): 661
Qgd Typ @ VGS = 4.5 V (nC): 6.8
Qrr Typ (nC): 2900
Coss Typ (pF): 22.3
Crss Typ (pF): 0.74
Package Type: DPAK-3 / TO-252-3
MSL Type: 1
MSL Temp (°C): 260
ON Target: Yes
参考价格: $0.8699
FCD2250N80Z
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 功率 MOSFET，N 沟道，SUPERFET® II，800 V，2.6 A，2.25 Ω，DPAK
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: DPAK
Type: High Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 800
RDS(on) Max @ VGS = 10 V (mΩ): 2250
VGS Max (V): DC: ±20, AC: ±30
Vgs(th) Max (V): 4.5
ID Max (A): 2.6
PD Max (W): 39
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 11
更多
Ciss Typ (pF): 440
Qgd Typ @ VGS = 4.5 V (nC): 4.3
Qrr Typ (nC): 2200
Coss Typ (pF): 16
Crss Typ (pF): 0.75
Package Type: DPAK-3 / TO-252-3
MSL Type: 1
MSL Temp (°C): 260
ON Target: Yes
参考价格: $0.6764
FCD260N65S3
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 功率 MOSFET，N 沟道，SUPERFET® III，Easy Drive，650 V，12 A，260 mΩ，DPAK
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: DPAK
Type: High Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 650
RDS(on) Max @ VGS = 10 V (mΩ): 260
VGS Max (V): ±30
Vgs(th) Max (V): 4.5
ID Max (A): 12
PD Max (W): 90
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 24
更多
Ciss Typ (pF): 1010
Qgd Typ @ VGS = 4.5 V (nC): 9.7
Qrr Typ (nC): 3400
Coss Typ (pF): 25
Crss Typ (pF): -
Package Type: DPAK-3 / TO-252-3
MSL Type: 1
MSL Temp (°C): 260
ON Target: Yes
参考价格: $0.6974
FCD3400N80Z
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 功率 MOSFET，N 沟道，SUPERFET® II，800 V，2 A，3.4 Ω，DPAK
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: DPAK
Type: High Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 800
RDS(on) Max @ VGS = 10 V (mΩ): 3400
VGS Max (V): DC: ±20, AC: ±30
Vgs(th) Max (V): 4.5
ID Max (A): 2
PD Max (W): 32
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 7.4
更多
Ciss Typ (pF): 299
Qgd Typ @ VGS = 4.5 V (nC): 3.1
Qrr Typ (nC): 868
Coss Typ (pF): 12.7
Crss Typ (pF): 0.36
Package Type: DPAK-3 / TO-252-3
MSL Type: 1
MSL Temp (°C): 260
ON Target: Yes
参考价格: $0.7707
FCD360N65S3R0
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 功率 MOSFET，N 沟道，SUPERFET® III，Easy Drive，650 V，10 A，360 mΩ，DPAK
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: DPAK
Type: High Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 650
RDS(on) Max @ VGS = 10 V (mΩ): 360
VGS Max (V): 30
Vgs(th) Max (V): 4.5
ID Max (A): 25
PD Max (W): 83
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 18
更多
Ciss Typ (pF): 730
Qgd Typ @ VGS = 4.5 V (nC): 7.6
Qrr Typ (nC): 2400
Coss Typ (pF): 15
Crss Typ (pF): -
Package Type: DPAK-3 / TO-252-3
MSL Type: 1
MSL Temp (°C): 260
ON Target: Yes
参考价格: $0.9647
FCD380N60E
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 功率 MOSFET，N 沟道，SUPERFET®，Easy Drive，600 V，10.2 A，380 mΩ，DPAK
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: DPAK
Type: High Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 600
RDS(on) Max @ VGS = 10 V (mΩ): 380
VGS Max (V): DC: ±20, AC: ±30
Vgs(th) Max (V): 3.5
ID Max (A): 10.2
PD Max (W): 106
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 34
更多
Ciss Typ (pF): 1330
Qgd Typ @ VGS = 4.5 V (nC): 13
Qrr Typ (nC): 3000
Coss Typ (pF): 945
Crss Typ (pF): 60
Package Type: DPAK-3 / TO-252-3
MSL Type: 1
MSL Temp (°C): 260
ON Target: Yes
参考价格: $1.0259