FCD4N60TM
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 功率 MOSFET，N 沟道，SUPERFET®，Easy Drive，600 V，3.9 A，1.2 Ω，DPAK
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: DPAK
Type: High Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 600
RDS(on) Max @ VGS = 10 V (mΩ): 1200
VGS Max (V): ±30
Vgs(th) Max (V): 5
ID Max (A): 3.9
PD Max (W): 50
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 12.8
更多
Ciss Typ (pF): 415
Qgd Typ @ VGS = 4.5 V (nC): 7.1
Qrr Typ (nC): 2070
Coss Typ (pF): 210
Crss Typ (pF): 19.5
Package Type: DPAK-3 / TO-252-3
MSL Type: 1
MSL Temp (°C): 260
ON Target: Yes
参考价格: $0.7962
FCD5N60TM
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 功率 MOSFET，N 沟道，SUPERFET®，Easy Drive，600 V，4.6 A，950 mΩ，DPAK
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: DPAK
Type: High Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 600
RDS(on) Max @ VGS = 10 V (mΩ): 950
VGS Max (V): ±30
Vgs(th) Max (V): 5
ID Max (A): 4.6
PD Max (W): 54
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 16
更多
Ciss Typ (pF): 470
Qgd Typ @ VGS = 4.5 V (nC): 7
Qrr Typ (nC): 2700
Coss Typ (pF): 250
Crss Typ (pF): 22
Package Type: DPAK-3 / TO-252-3
MSL Type: 1
MSL Temp (°C): 260
ON Target: Yes
参考价格: $0.8566
FCD5N60TM-WS
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 功率 MOSFET，N 沟道，SUPERFET®，Easy Drive，600 V，4.6 A，950 mΩ，DPAK
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: DPAK
Type: High Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 600
RDS(on) Max @ VGS = 10 V (mΩ): 950
VGS Max (V): ±30
Vgs(th) Max (V): 5
ID Max (A): 4.6
PD Max (W): 54
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 16
更多
Ciss Typ (pF): 470
Qgd Typ @ VGS = 4.5 V (nC): 7
Qrr Typ (nC): 2700
Coss Typ (pF): 250
Crss Typ (pF): 22
Package Type: DPAK-3 / TO-252-3
MSL Type: 1
MSL Temp (°C): 260
ON Target: Yes
参考价格: $0.7389
FCD5N60-F085
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N 沟道，SuperFET®，600 V，4.6 A，0.86 Ω
状态: 已停产
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: TO-252-3
Type: High Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 600
RDS(on) Max @ VGS = 10 V (mΩ): 1100
VGS Max (V): ±30
Vgs(th) Max (V): 5
ID Max (A): 4.6
PD Max (W): 54
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 16
更多
Ciss Typ (pF): 570
Qgd Typ @ VGS = 4.5 V (nC): 7.6
Qrr Typ (nC): 1700
Coss Typ (pF): 280
Crss Typ (pF): 20
Package Type: DPAK-3 / TO-252-3
MSL Type: 1
MSL Temp (°C): 260
ON Target: No
参考价格: Price N/A
FCD600N65S3R0
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 功率 MOSFET，N 沟道，SUPERFET® III，Easy Drive，650 V，6 A，600 mΩ，DPAK
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: DPAK
Type: High Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 650
RDS(on) Max @ VGS = 10 V (mΩ): 600
VGS Max (V): 30
Vgs(th) Max (V): 4.5
ID Max (A): 6
PD Max (W): 54
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 11
更多
Ciss Typ (pF): 465
Qgd Typ @ VGS = 4.5 V (nC): 4.9
Qrr Typ (nC): 1600
Coss Typ (pF): 10
Crss Typ (pF): -
Package Type: DPAK-3 / TO-252-3
MSL Type: 1
MSL Temp (°C): 260
ON Target: Yes
参考价格: $0.7265
FCD600N60Z
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 功率 MOSFET，N 沟道，SUPERFET® II，FAST，600 V，7.4 A，600 mΩ，DPAK
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: DPAK
Type: High Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 600
RDS(on) Max @ VGS = 10 V (mΩ): 600
VGS Max (V): DC: ±20, AC: ±30
Vgs(th) Max (V): 3.5
ID Max (A): 7.4
PD Max (W): 89
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 20
更多
Ciss Typ (pF): 840
Qgd Typ @ VGS = 4.5 V (nC): 7.5
Qrr Typ (nC): 2300
Coss Typ (pF): 630
Crss Typ (pF): 30
Package Type: DPAK-3 / TO-252-3
MSL Type: 1
MSL Temp (°C): 260
ON Target: Yes
参考价格: $0.8472
FCD7N60TM-WS
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 功率 MOSFET，N 沟道，SUPERFET®，Easy Drive，600 V，7 A，600 mΩ，DPAK
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: DPAK
Type: High Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 600
RDS(on) Max @ VGS = 10 V (mΩ): 600
VGS Max (V): ±30
Vgs(th) Max (V): 5
ID Max (A): 7
PD Max (W): 83
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 23
更多
Ciss Typ (pF): 710
Qgd Typ @ VGS = 4.5 V (nC): 11.5
Qrr Typ (nC): 4500
Coss Typ (pF): 380
Crss Typ (pF): 34
Package Type: DPAK-3 / TO-252-3
MSL Type: 1
MSL Temp (°C): 260
ON Target: Yes
参考价格: $0.9413
FCD620N60ZF
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 功率 MOSFET，N 沟道，SUPERFET® II，FRFET®，600 V，7.3 A，620 mΩ，DPAK
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: DPAK
Type: High Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 600
RDS(on) Max @ VGS = 10 V (mΩ): 620
VGS Max (V): DC: ±20, AC: ±30
Vgs(th) Max (V): 5
ID Max (A): 7.3
PD Max (W): 89
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 20
更多
Ciss Typ (pF): 855
Qgd Typ @ VGS = 4.5 V (nC): 7.7
Qrr Typ (nC): 325
Coss Typ (pF): 625
Crss Typ (pF): 30
Package Type: DPAK-3 / TO-252-3
MSL Type: 1
MSL Temp (°C): 260
ON Target: Yes
参考价格: $0.8203
FCD7N60TM
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 功率 MOSFET，N 沟道，SUPERFET®，Easy Drive，600 V，7 A，600 mΩ，DPAK
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: DPAK
Type: High Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 600
RDS(on) Max @ VGS = 10 V (mΩ): 600
VGS Max (V): ±30
Vgs(th) Max (V): 5
ID Max (A): 7
PD Max (W): 83
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 23
更多
Ciss Typ (pF): 710
Qgd Typ @ VGS = 4.5 V (nC): 11.5
Qrr Typ (nC): 4500
Coss Typ (pF): 380
Crss Typ (pF): 34
Package Type: DPAK-3 / TO-252-3
MSL Type: 1
MSL Temp (°C): 260
ON Target: No
参考价格: $1.1458
FCD850N80Z
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 功率 MOSFET，N 沟道，SUPERFET® II，800 V，6 A，850 mΩ，DPAK
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: DPAK
Type: High Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 800
RDS(on) Max @ VGS = 10 V (mΩ): 850
VGS Max (V): DC: ±20, AC: ±30
Vgs(th) Max (V): 4.5
ID Max (A): 6
PD Max (W): 75
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 29
更多
Ciss Typ (pF): 990
Qgd Typ @ VGS = 4.5 V (nC): 8.6
Qrr Typ (nC): 4500
Coss Typ (pF): 28
Crss Typ (pF): 0.74
Package Type: DPAK-3 / TO-252-3
MSL Type: 1
MSL Temp (°C): 260
ON Target: Yes
参考价格: $1.0552