I[Dpuls] max: 340.0A R[thJC] max: 2.2K/W R[th]: 2.2K/W P[tot] max: 57.0W V[DS] max: 40.0V Q[G](typ @10V): 36.0nC Polarity: N C[iss]: 2800.0pF C[oss]: 630.0pF Q[G](typ @4.5V): 17.0nC R[DS (on)](@10V) max: 5.0mΩ R[DS (on)](@4.5V) max: 7.2mΩ R[DS (on)](@4.5V LL) max: 7.2mΩ Package: SuperSO8 5x6 I[D ](@25°C) max: 85.0A V[GS(th)]: 1.6V Operating Temperature max: 150.0°C Budgetary Price €/1k: 0.25
V[DS] max: 40.0V P[tot] max: 139.0W I[Dpuls] max: 1124.0A R[th]: 0.9K/W Polarity: N C[iss]: 6800.0pF C[oss]: 1900.0pF R[DS (on)](@10V) max: 1.0mΩ R[DS (on)](@4.5V) max: 1.3mΩ R[DS (on)](@4.5V LL) max: 1.3mΩ Package: SuperSO8 5x6 I[D ](@25°C) max: 281.0A Q[G](typ @4.5V): 49.0nC V[GS(th)]: 1.48V Operating Temperature max: 175.0°C Special Features: Fused leads Budgetary Price €/1k: 0.59
I[Dpuls] max: 836.0A R[thJC] max: 1.0K/W R[th]: 1.0K/W P[tot] max: 125.0W V[DS] max: 40.0V Q[G](typ @4.5V): 54.0nC Polarity: N C[iss]: 8900.0pF C[oss]: 1800.0pF Q[G](typ @10V): 113.0nC R[DS (on)](@10V) max: 1.8mΩ R[DS (on)](@4.5V) max: 2.5mΩ R[DS (on)](@4.5V LL) max: 2.5mΩ Package: SuperSO8 5x6 I[D ](@25°C) max: 209.0A V[GS(th)]: 1.6V Operating Temperature max: 150.0°C Budgetary Price €/1k: 0.48

IRFH8201


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 25V Single N-Channel Power MOSFET in a PQFN 5x6 package

Mounting: SMD P[tot](@ T[A]=25°C) max: 3.6W P[tot] max: 156.0W Q[gd]: 18.0nC R[thJC] max: 0.8K/W V[GS] max: 20.0V Moisture Sensitivity Level: 1 Polarity: N V[DS] max: 25.0V R[DS (on)](@10V) max: 0.95mΩ R[DS (on)](@4.5V) max: 1.6mΩ V[GS(th)]: 1.8V I[D ](@25°C) max: 324.0A Q[G](typ @4.5V): 56.0nC Package: SuperSO8 5x6 Operating Temperature max: 150.0°C Budgetary Price €/1k: 0.64

IRFH7004


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 40V Single N-Channel StrongIRFET™ Power MOSFET in a PQFN 5x6 package

Polarity: N Q[gd]: 40.0nC T[j] max: 150.0°C Moisture Sensitivity Level: 1 Mounting: SMD P[tot] max: 156.0W R[thJC] max: 0.8K/W V[DS] max: 40.0V V[GS] max: 20.0V R[DS (on)](@10V) max: 1.4mΩ V[GS(th)]: 3.0V Q[G](typ @10V): 129.0nC I[D ](@25°C) max: 259.0A Package: SuperSO8 5x6 Operating Temperature max: 150.0°C Budgetary Price €/1k: 0.58
I[Dpuls] max: 160.0A R[th]: 4.2K/W P[tot] max: 30.0W V[DS] max: 30.0V Q[G](typ @4.5V): 6.7nC Polarity: N C[iss]: 870.0pF C[oss]: 330.0pF Q[G](typ @10V): 13.0nC R[DS (on)](@10V) max: 4.5mΩ R[DS (on)](@4.5V) max: 6.4mΩ R[DS (on)](@4.5V LL) max: 6.4mΩ Package: Symmetrical Dual 5x6 I[D ](@25°C) max: 40.0A V[GS(th)]: 1.6V Operating Temperature max: 150.0°C Budgetary Price €/1k: 0.28
R[th]: 4.5K/W I[Dpuls] max: 156.0A R[thJC] max: 4.5K/W P[tot] max: 28.0W V[DS] max: 30.0V Q[G](typ @4.5V): 5.4nC Polarity: N C[iss]: 920.0pF C[oss]: 390.0pF Q[G](typ @10V): 11.0nC R[DS (on)](@10V) max: 12.0mΩ R[DS (on)](@4.5V) max: 16.5mΩ R[DS (on)](@4.5V LL) max: 16.5mΩ Package: SuperSO8 5x6 I[D ](@25°C) max: 39.0A V[GS(th)]: 1.74V Operating Temperature max: 150.0°C Budgetary Price €/1k: 0.17
I[Dpuls] max: 80.0A R[thJC] max: 4.9K/W R[th]: 4.9K/W P[tot] max: 26.0W V[DS] max: 30.0V Q[G](typ @4.5V): 4.8nC Polarity: N+N C[iss]: 850.0pF C[oss]: 350.0pF Q[G](typ @10V): 10.0nC R[DS (on)](@10V) max: 15.0mΩ R[DS (on)](@4.5V) max: 22.0mΩ R[DS (on)](@4.5V LL) max: 22.0mΩ Package: SuperSO8 5x6 I[D ](@25°C) max: 20.0A V[GS(th)]: 1.74V Operating Temperature max: 150.0°C Budgetary Price €/1k: 0.28

IRF2204


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 40V Single N-Channel Power MOSFET in a TO-220 package

Mounting: THT Package: TO-220 Polarity: N Qgd: 39.0nC RthJC: NoneK/W Tj: None°C VDS: NoneV Ptot: NoneW VGS: NoneV RDS (on)(@10V): NonemΩ VGS(th): 3.0V QG(typ @10V): 130.0nC ID (@25°C): NoneA Operating Temperature: None°C Budgetary Price €/1k: 0.83

IRFH5301


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 30V Single N-Channel StrongIRFET™ Power MOSFET in a PQFN 5X6 package

Moisture Sensitivity Level: 1 Polarity: N P[tot] max: 110.0W Q[gd]: 12.0nC R[thJC] max: 1.1K/W V[DS] max: 30.0V V[GS] max: 20.0V Mounting: SMD P[tot](@ T[A]=25°C) max: 3.6W T[j] max: 150.0°C R[DS (on)](@10V) max: 1.85mΩ R[DS (on)](@4.5V) max: 2.9mΩ V[GS(th)]: 1.8V I[D ](@25°C) max: 100.0A Q[G](typ @4.5V): 37.0nC Package: SuperSO8 5x6 Operating Temperature max: 150.0°C Budgetary Price €/1k: 0.43