ECH8667-TL-H
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 双 P 沟道，功率 MOSFET，-30V，-5.5A，39mΩ
状态: 量产中
Compliance: Pb A H P
Channel Polarity: P-Channel
Silicon Family: PowerTrench® T1
Package Name: Power 33
Type: Low-Medium Voltage
Gate Level: Logic
Wide SOA Mosfets: 0
Configuration: Dual
OPN in older Technology: 0
V(BR)DSS Min (V): -30
RDS(on) Max @ VGS = 10 V (mΩ): 39
Vgs (V): 20
Vgs(th) Max (V): 2.6
ID Max (A): -5.5
PD Max (W): 1.3
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): Q1=Q2=77
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 13
更多
Ciss Typ (pF): 600
Qgd Typ @ VGS = 4.5 V (nC): 3.2
Qrr Typ (nC): -
Coss Typ (pF): 145
Crss Typ (pF): 110
Package Type: SOT-28 FL / ECH-8
MSL Type: 1
MSL Temp (°C): 260
ON Target: No
参考价格: $0.3448
ECH8690-TL-H
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 互补，双功率 MOSFET 60V
状态: 量产中
Compliance: Pb A H P
Channel Polarity: Complementary
Silicon Family: PowerTrench® T1
Package Name: Power 33
Type: Low-Medium Voltage
Gate Level: Logic
Wide SOA Mosfets: 0
Configuration: Dual
OPN in older Technology: 0
V(BR)DSS Min (V): ±60
RDS(on) Max @ VGS = 10 V (mΩ): 55
Vgs (V): 20
Vgs(th) Max (V): 2.6
ID Max (A): 4.7
PD Max (W): 1.5
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): 74
Qg Typ @ VGS = 4.5 V (nC): 10
Qg Typ @ VGS = 10 V (nC): 18
更多
Ciss Typ (pF): 955
Qgd Typ @ VGS = 4.5 V (nC): 2.8
Qrr Typ (nC): -
Coss Typ (pF): 58
Crss Typ (pF): 45
Package Type: SOT-28 FL / ECH-8
MSL Type: 1
MSL Temp (°C): 260
ON Target: No
参考价格: $0.3452
ECH8693R-TL-W
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 用于 1 至 2 节锂电子电池保护的双 N 沟道功率 MOSFET，24V，14A，7mΩ
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: Power 33
Type: Low-Medium Voltage
Gate Level: Logic
Wide SOA Mosfets: 0
Configuration: Dual Common Drain
OPN in older Technology: 0
V(BR)DSS Min (V): 24
RDS(on) Max @ VGS = 10 V (mΩ): -
Vgs (V): 12
Vgs(th) Max (V): 1.3
ID Max (A): 14
PD Max (W): 1.4
RDS(on) Max @ VGS = 2.5 V (mΩ): Q1=Q2=10.5
RDS(on) Max @ VGS = 4.5 V (mΩ): Q1=Q2=7
Qg Typ @ VGS = 4.5 V (nC): 6
Qg Typ @ VGS = 10 V (nC): 13
更多
Ciss Typ (pF): -
Qgd Typ @ VGS = 4.5 V (nC): 2.4
Qrr Typ (nC): -
Coss Typ (pF): -
Crss Typ (pF): -
Package Type: SOT-28 FL / ECH-8
MSL Type: 1
MSL Temp (°C): 260
ON Target: No
参考价格: $0.2401
ECH8695R-TL-W
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 用于 1-2 节锂电子电池保护的双 N 沟道功率 MOSFET，24 V，11 A，9.1 mΩ
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: Power 33
Type: Low-Medium Voltage
Gate Level: Logic
Wide SOA Mosfets: 0
Configuration: Dual Common Drain
OPN in older Technology: 0
V(BR)DSS Min (V): 24
RDS(on) Max @ VGS = 10 V (mΩ): -
Vgs (V): 12.5
Vgs(th) Max (V): 1.3
ID Max (A): 11
PD Max (W): 1.4
RDS(on) Max @ VGS = 2.5 V (mΩ): Q1=Q2=13.3
RDS(on) Max @ VGS = 4.5 V (mΩ): Q1=Q2=9.1
Qg Typ @ VGS = 4.5 V (nC): 37
Qg Typ @ VGS = 10 V (nC): 10
更多
Ciss Typ (pF): -
Qgd Typ @ VGS = 4.5 V (nC): 1.5
Qrr Typ (nC): -
Coss Typ (pF): -
Crss Typ (pF): -
Package Type: SOT-28 FL / ECH-8
MSL Type: 1
MSL Temp (°C): 260
ON Target: No
参考价格: $0.2848
ECH8697R-TL-W
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 用于 1-2 节锂电子电池保护的双 N 沟道功率 MOSFET，24 V，10 A，11.6 mΩ
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: Power 33
Type: Low-Medium Voltage
Gate Level: Logic
Wide SOA Mosfets: 0
Configuration: Dual Common Drain
OPN in older Technology: 0
V(BR)DSS Min (V): 24
RDS(on) Max @ VGS = 10 V (mΩ): -
Vgs (V): 12.5
Vgs(th) Max (V): 1.3
ID Max (A): 10
PD Max (W): 1.6
RDS(on) Max @ VGS = 2.5 V (mΩ): Q1=Q2=17.5
RDS(on) Max @ VGS = 4.5 V (mΩ): Q1=Q2=11.6
Qg Typ @ VGS = 4.5 V (nC): 15
Qg Typ @ VGS = 10 V (nC): 6
更多
Ciss Typ (pF): -
Qgd Typ @ VGS = 4.5 V (nC): 0.9
Qrr Typ (nC): -
Coss Typ (pF): -
Crss Typ (pF): -
Package Type: SOT-28 FL / ECH-8
MSL Type: 1
MSL Temp (°C): 260
ON Target: No
参考价格: $0.2243
FDB0165N807L
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N 沟道，PowerTrench® MOSFET，80V，310A，1.6mΩ
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T6
Package Name: D2PAK7
Type: Low-Medium Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 80
RDS(on) Max @ VGS = 10 V (mΩ): 1.6
Vgs (V): ±20
Vgs(th) Max (V): 4
ID Max (A): 310
PD Max (W): 300
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 217
更多
Ciss Typ (pF): 16900
Qgd Typ @ VGS = 4.5 V (nC): 38
Qrr Typ (nC): 90
Coss Typ (pF): 2350
Crss Typ (pF): 335
Package Type: D2PAK-7 / TO-263-7
MSL Type: 1
MSL Temp (°C): 245
ON Target: Yes
参考价格: $4.1468
FDB0170N607L
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N 沟道，PowerTrench® MOSFET，60V，300A，1.4mΩ
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T6
Package Name: D2PAK7
Type: Low-Medium Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 60
RDS(on) Max @ VGS = 10 V (mΩ): 1.4
Vgs (V): ±20
Vgs(th) Max (V): 4
ID Max (A): 300
PD Max (W): 250
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 89
更多
Ciss Typ (pF): 13750
Qgd Typ @ VGS = 4.5 V (nC): 26
Qrr Typ (nC): 95
Coss Typ (pF): 3235
Crss Typ (pF): 240
Package Type: D2PAK-7 / TO-263-7
MSL Type: 1
MSL Temp (°C): 245
ON Target: Yes
参考价格: $2.2845
FDB0190N807L
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N 沟道，PowerTrench® MOSFET，80V，270A，1.7mΩ
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T6
Package Name: D2PAK7
Type: Low-Medium Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 80
RDS(on) Max @ VGS = 10 V (mΩ): 1.7
Vgs (V): ±20
Vgs(th) Max (V): 4
ID Max (A): 270
PD Max (W): 250
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 178
更多
Ciss Typ (pF): 13650
Qgd Typ @ VGS = 4.5 V (nC): 32
Qrr Typ (nC): 103
Coss Typ (pF): 1990
Crss Typ (pF): 235
Package Type: D2PAK-7 / TO-263-7
MSL Type: 1
MSL Temp (°C): 245
ON Target: Yes
参考价格: $2.7767
FDB024N08BL7
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N 沟道，PowerTrench® MOSFET，80V，229A，2.4mΩ
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T6
Package Name: D2PAK7
Type: Low-Medium Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 80
RDS(on) Max @ VGS = 10 V (mΩ): 2.4
Vgs (V): ±20
Vgs(th) Max (V): 4.5
ID Max (A): 229
PD Max (W): 246
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 137
更多
Ciss Typ (pF): 10170
Qgd Typ @ VGS = 4.5 V (nC): 28
Qrr Typ (nC): 112
Coss Typ (pF): 1670
Crss Typ (pF): 35
Package Type: D2PAK-7 / TO-263-7
MSL Type: 1
MSL Temp (°C): 245
ON Target: Yes
参考价格: $2.1273
FDB0250N807L
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 80 V N-沟道 PowerTrench® MOSFET
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T6
Package Name: D2PAK7
Type: Low-Medium Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 80
RDS(on) Max @ VGS = 10 V (mΩ): 2.2
Vgs (V): ±20
Vgs(th) Max (V): 4
ID Max (A): 240
PD Max (W): 214
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 143
更多
Ciss Typ (pF): 11000
Qgd Typ @ VGS = 4.5 V (nC): 25
Qrr Typ (nC): 81
Coss Typ (pF): 1435
Crss Typ (pF): 115
Package Type: D2PAK-7 / TO-263-7
MSL Type: 1
MSL Temp (°C): 245
ON Target: Yes
参考价格: $2.5138